A method of processing a substrate that displays out-gassing when placed in a vacuum includes placing the substrate in a vacuum and performing an out-gassing treatment by heating the substrate to a temperature T1 and removing gaseous contamination emitted from the substrate until the out-gassing rate is determined by the diffusion of the substrate's contamination and thus essentially a steady state has been established. Afterwards, the temperature is lowered to a temperature T2 at which the diffusion rate of the substrate's contamination is lower than at T1. The substrate is further processed at the temperature T2 until the substrate has been covered with a film including a metal.

A method of processing a substrate that displays out-gassing when placed in a vacuum comprises placing the substrate in a vacuum and performing an out-gassing treatment by heating the substrate to a temperature T1 and removing gaseous contamination emitted from the substrate until the out-gassing rate is determined by the diffusion of the substrate's contamination and thus essentially a steady state has been established. Afterwards, the temperature is lowered to a temperature T2 at which the diffusion rate of the substrate's contamination is lower than at T1. The substrate is further processed at said temperature T2 until the substrate has been covered with a film comprising a metal.

A mounting table includes a cooling table, a power feed body, an electrostatic chuck, a first elastic member and a clamping member. The power feed body is connected to the cooling table to transmit a high frequency power. A base of the electrostatic chuck has conductivity. An attraction unit has an attraction electrode and a heater therein, and is fastened to the base by metal bonding. The first elastic member is provided between the cooling table and the base to allow the electrostatic chuck to be spaced apart from the cooling table. The first elastic member forms, along with the cooling table and the base, a heat transfer space into which a heat transfer gas is supplied. The clamping member is contacted with the cooling table and the base, and allows the base and the first elastic member to be interposed between the cooling table and the clamping member.

A method for treating an outer surface of a heat transfer fluid tube especially for a receiver of a solar thermal power plant, having the steps of providing the heat transfer fluid tube and treating the outer surface with a hydrogen plasma jet so that a porosity in the range of a nano-scale is created in a thin layer of that outer surface.

The present disclosure provides an impedance-matching method applied to a semiconductor process apparatus, an impedance-matching device, and the semiconductor process apparatus. The impedance-matching method includes adjusting a parameter value of an adjustable element of an impedance-matching device to a preset initial value at beginning of a process, when a radio frequency (RF) power supply is powered on, adjusting the parameter value of the adjustable element according to a pre-stored optimal matching path corresponding to the process, and adjusting the parameter value of the adjustable element using an automatic matching algorithm after reaching end time of the preset matching period until impedance-matching is achieved. The optimal matching path includes parameter values of the adjustable element corresponding to different moments in a preset matching period.