A semiconductor device and method is disclosed. Devices shown include a die coupled to an integrated routing layer, wherein the integrated routing layer includes a first width that is wider than the die. Devices shown further included a molded routing layer coupled to the integrated routing layer.

The present disclosure relates generally to ion implantation, and more particularly, to systems and processes for measuring the temperature of a wafer within an ion implantation system. An exemplary ion implantation system may include a robotic arm, one or more load lock chambers, a pre-implantation station, an ion implanter, a post-implantation station, and a controller. The pre-implantation station is configured to heat or cool a wafer prior to the wafer being implanted with ions by the ion implanter. The post-implantation station is configured to heat or cool a wafer after the wafer is implanted with ions by the ion implanter. The pre-implantation station and/or post-implantation station are further configured to measure a current temperature of a wafer. The controller is configured to control the various components and processes described above, and to determine a current temperature of a wafer based on information received from the pre-implantation station and/or post-implantation station.

A reactor system with stuck lift pin detection. The system includes a reaction chamber, a susceptor for supporting wafers in an interior space of the reaction chamber, and an elevator for raising and lowering the susceptor in the interior space. Further, the system includes a lift pin supported by and extending vertically through the susceptor to travel between an up and a down position with movements of the susceptor by the elevator, and a landing pad is provided in the system for receiving a base of the lift pin when the lift pin is in the down position. Significantly, the system also includes a sensor assembly with a sensor positioned at least partially within the interior space of the reaction chamber. An output signal of the sensor is indicative of whether the lift pin is sticking or seizing during travel through the susceptor.

In some embodiments, the present disclosure relates to a wafer edge trimming apparatus that includes a processing chamber defined by chamber housing. Within the processing chamber is a wafer chuck configured to hold onto a wafer structure. Further, a blade is arranged near an edge of the wafer chuck and configured to remove an edge potion of the wafer structure and to define a new sidewall of the wafer structure. A laser sensor apparatus is configured to direct a laser beam directed toward a top surface of the wafer chuck. The laser sensor apparatus is configured to measure a parameter of an analysis area of the wafer structure. Control circuitry is to the laser sensor apparatus and the blade. The control circuitry is configured to start a damage prevention process when the parameter deviates from a predetermined threshold value by at least a predetermined shift value.

The present invention provides an evaluation method for evaluating a state in an apparatus concerning particles existing inside a substrate processing apparatus for processing a substrate, including arranging a plate in a charged state inside the apparatus and obtaining the number of particles adhered to the plate by performing a dummy operation different from an operation of processing the substrate, and evaluating the state in the apparatus based on a coefficient representing a ratio of the number of particles adhered to the plate by performing the dummy operation for the plate in an uncharged state to the number of particles adhered to the plate in the charged state, and the number of particles obtained in the arranging the plate.

A semiconductor device and method is disclosed. Devices shown include a die coupled to an integrated routing layer, wherein the integrated routing layer includes a first width that is wider than the die. Devices shown further included a molded routing layer coupled to the integrated routing layer.

A semiconductor device and method is disclosed. Devices shown include a die coupled to an integrated routing layer, wherein the integrated routing layer includes a first width that is wider than the die. Devices shown further included a molded routing layer coupled to the integrated routing layer.

An integrated fan-out structure on a semiconductor die, method of making the same and method of testing the semiconductor die are disclosed. The semiconductor die includes a bond pad and a hole formed in the bond pad, a passivation layer formed over a portion of the bond pad, and a protective layer formed over the hole in the bond pad.

The disclosure provides a method for monitoring abnormal sensors during fabrication of a semiconductor structure, an electronic device and storage medium. The method includes: measurement data of a wafer passing through different measurement sites are acquired; a plurality of measurement data included in each measurement site are input to a first classifier to select a first plurality of measurement sites; a plurality of measurement data corresponding to the first plurality of selected measurement sites are input to second and third classifiers to select a second plurality of measurement sites; the measurement data corresponding to the plurality of measurement sites are input to the first, second and third classifiers respectively, to select a plurality of target sensors; and the score of each target sensor group is obtained, and a plurality of target sensors in the target sensor group with the highest score are defined as abnormal sensors.

A method of processing a semiconductor wafer includes: forming a first metal layer or metal layer stack on a backside of the semiconductor wafer; forming a plating preventative layer on the first metal layer or metal layer stack, the plating preventative layer being formed at least over a kerf region of the semiconductor wafer and such that part of the first metal layer or metal layer stack is uncovered by the plating preventative layer, wherein the kerf region defines an area for dividing the semiconductor wafer along the kerf region into individual semiconductor dies; and plating a second metal layer or metal layer stack on the part of the first metal layer or metal layer stack uncovered by the plating preventative layer, wherein the plating preventative layer prevents plating of the second metal layer or metal layer stack over the kerf region.