A system and method for thinning an integrated circuit (IC) wafer. The system includes a support structure to hold the IC wafer and a mechanism to operate on the IC wafer. The support structure includes one or more inductive coils configured to transmit a power signal to the IC wafer and receive a feedback signal from the IC wafer. The system further includes a process controller to control the operation based at least in part on the feedback signal received from the IC wafer.

An apparatus for processing stacks is provided. A first gas source is provided. A first gas manifold is connected to the first gas source. A first processing station has a first gas outlet, wherein the first gas outlet is connected to the first gas manifold. A first variable conductance valve is between the first gas source and the first gas outlet along the first gas manifold.

A process of fabricating semiconductor devices includes determining a correlation between band gap and long range order parameter for one or more stoichiometries. Semiconductor materials having a preselected (target) band gap can be fabricated by controlling process parameters to form a material having a stoichiometry and long range order parameter having the target band gap.

A display substrate including a base substrate having a display area and a non-display area around the display area, a plurality of gate lines disposed in the display area and extending in a first direction, a plurality of data lines disposed in the display area, insulated from the gate lines, and extending in a second direction crossing the first direction, and a plurality of data line extension portions extending from the data lines to the non-display area, in which each of the data line extension portions includes a first portion and a second portion disposed at a higher position than the first portion.

In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including alignment marks; measuring a position of the wafer by measuring positions of the alignment marks with one or more cameras; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including integrated circuit dies; measuring a position of the wafer by measuring a positions of an outer edge of the integrated circuit dies with a camera; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

The disclosure provides a wafer searching method and device. The method includes: obtaining a target wafer and a reference wafer; determining a first specific area in the target wafer, and obtaining a first significant distribution feature of the first specific area; determining a second specific area in the reference wafer, and obtaining a second significant distribution feature of the second specific area; in response to determining that the first significant distribution feature corresponds to the second significant distribution feature, estimating a fail pattern similarity between the first specific area and the second specific area; in response to determining that the fail pattern similarity is greater than a threshold, providing the reference wafer as a search result corresponding to the target wafer.

A method of manufacturing a semiconductor device, includes attaching a first susceptor to a film forming apparatus, measuring a magnitude of a warp of the first susceptor, setting a first initial film formation condition as a film formation condition of the film forming apparatus in accordance with the measured magnitude of the warp of the first susceptor, and placing a plurality of first wafers on the first susceptor and forming a first film on the plurality of first wafers under the film formation condition. The setting of the first initial film formation condition includes reading the first initial film formation condition from a recording medium storing a database. The database includes a plurality of pieces of data in which magnitudes of warps of susceptors are associated with initial film formation conditions for forming the first film.

To provide more test data during the manufacture of non-volatile memories and other integrated circuits, machine learning is used to generate virtual test values. Virtual test results are interpolated for one set of tests for devices on which the test is not performed based on correlations with other sets of tests. In one example, machine learning determines a correlation study between bad block values determined at die sort and photo-limited yield (PLY) values determined inline during processing. The correlation can be applied to interpolate virtual inline PLY data for all of the memory dies, allowing for more rapid feedback on the processing parameters for manufacturing the memory dies and making the manufacturing process more efficient and accurate. In another set of embodiments, the machine learning is used to extrapolate limited metrology (e.g., critical dimension) test data to all of the memory die through interpolated virtual metrology data values.

A method of fabricating a device involves forming a plurality of structures, such that each structure of the plurality includes a substrate and an epitaxial layer on the substrate. The epitaxial layer and the substrate have a lattice mismatch. The method further includes forming an electrical contact on the epitaxial layer of a selected structure of the plurality of structures and performing a current leakage measurement quality control test for the selected structure of the plurality of structures through the electrical contact. The method also involves forming a device on each of the remaining structures of the plurality of structures if the selected structure passed the leakage measurement quality control test or discarding each of the remaining structures of the plurality of structures if the selected structure did not pass the leakage measurement quality control test.