A system and method for generating a quality parameter value of a semiconductor device wafer (SDW), during fabrication thereof, the method including designating a plurality of measurement site sets (MSSs) on the SDW, each of the MSSs including a first measurement-orientation site (FMS) and a second measurement-orientation site (SMS), the FMS and the SMS being different measurement sites on the SDW, generating a first measurement-orientation quality parameter dataset (FMQPD) by measuring features formed within each the FMS of at least one of the MSSs in a first measurement orientation, generating a second measurement-orientation quality parameter dataset (SMQPD) by measuring features formed within each the SMS of the at least one of the MSSs in a second measurement orientation and generating at least one tool-induced-shift (TIS)-ameliorated quality parameter value (TAQPV), at least partially based on the FMQPD and the SMQPD.

A method for estimating at least one electrical property of a semiconductor device is provided. The method includes forming the semiconductor device and at least one testing unit on a substrate, irradiating the testing unit with at least one electron beam, estimating electrons from the testing unit induced by the electron beam, and estimating the electrical property of the semiconductor device according to intensity of the estimated electrons from the testing unit.

A method and apparatus for controlling wafer preparation are provided. The method includes that: in response to first work-in-process preparation dispatching instruction, the number of first available devices corresponding to preparation process of first work-in-process at a current site is acquired from wafer preparation information base and based on real-time dispatching system for wafer preparation, and a maximum loading capacity of first available devices is acquired, wafer preparation information base including the number of available devices and the maximum loading capacity of available devices corresponding to preparation process of multiple work-in-process at the current site; when the number of first available devices is greater than or equal to preset number of available devices, and the maximum loading capacity of first available devices is greater than or equal to preset maximum loading capacity, a preparation instruction of first work-in-process is issued based on real-time dispatching system.

A lead frame includes a die pad that includes a mounting surface for a semiconductor chip, and a film-like member that is arranged on the mounting surface of the die pad. The die pad includes a through hole that is formed in an area that includes an outer periphery of the film-like member.

Metrology slot plates, processing chamber lids and processing chambers having metrology slot plates are described. Each of the metrology slot plates independently comprises one or more of a plate blank, a reflectometer, a capacitance sensor, a gas flow meter, a manometer, a pyrometer, a distance sensor (laser) or an emissometer.

A micro LED display includes a display substrate, a first soldering layer, at least one second soldering layer, first micro LEDs and at least one second micro LED. The display substrate includes a substrate having a plurality of pixel areas, a first circuit layer and a second circuit layer, and the first circuit layer and the second circuit layer are arranged in each pixel area. The first soldering layer is disposed on the first circuit layer, and the second soldering layer is disposed on the second micro LED. An arranging area of the first soldering layer is greater than an arranging area of the second soldering layer. The first micro LEDs is bonding to the first circuit layer in each pixel area through the first soldering layer. The second micro LED is bonding to the second circuit layer of one of the pixel areas through the second soldering layer.

In certain aspects, a method for controlling wafer stress is disclosed. A semiconductor film is formed on a backside of a wafer. The wafer is deformed by stress associated with a front-side semiconductor structure on a front side of the wafer opposite to the backside of the wafer. A laser application region of the semiconductor film is determined. A laser anneal process is performed in the laser application region of the semiconductor film.

A device includes a diffraction-based overlay (DBO) mark having an upper-layer pattern disposed over a lower-layer pattern, and having smallest dimension greater than about 5 micrometers. The device further includes a calibration mark having an upper-layer pattern disposed over a lower-layer pattern, positioned substantially at a center of the DBO mark, and having smallest dimension less than about 1/5 the size of the smallest dimension of the DBO mark.

Diagnostic detection chip device designs that reduce cost of fabrication and assembly are described herein. Such chip device designs include features that facilitate use of the chip within a chip carrier device with integrated fluid flow control features and compatibility with conventional sample cartridges and sample processing systems. Associated methods of manufacture and assembly of the chip devices are also provided herein.

A semiconductor device includes a semiconductor substrate on which a temperature sensor is formed, a plurality of insulating films formed above the semiconductor substrate, a temperature measurement wiring pattern formed on a first insulating film which is one of the plurality of the insulating films, a detection electrode which is formed on the uppermost insulating film of the plurality of the insulating films to be arranged at a position corresponding to the first temperature measurement wiring pattern and is provided for contact a temperature measurement needle, and one or more via electrodes formed in one or more insulating film between the temperature measurement electrode and the detection electrode to couple between the temperature measurement electrode and is the detection electrode.