Patent classifications
H01L23/12
Multilayer circuit board manufacturing method
There is a method of manufacturing a multilayer wiring board including: alternately stacking wiring layers and insulating layers; stacking a reinforcing sheet on one surface of the resulting multilayer laminate with a soluble adhesive layer therebetween, wherein an unoccupied region without the soluble adhesive layer is provided within a facing area where the reinforcing sheet faces the multilayer laminate; allowing a liquid capable of dissolving the soluble adhesive layer to infiltrate the unoccupied region to dissolve or soften the soluble adhesive layer; and releasing the reinforcing sheet from the multilayer laminate at the soluble adhesive layer. This method enables the multilayer wiring layer to be reinforced to generate no large local warpage, thereby improving the reliable connection and the surface flatness (coplanarity) of the multilayer wiring layer. The used reinforcing sheet can be released in a significantly short time, while minimizing the stress applied to the multilayer laminate.
INK-JET APPLICATION TYPE COMPOSITION FOR WIRING-LINE PROTECTION, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE USING SAME, AND SEMICONDUCTOR DEVICE
The present invention addresses the problem of providing an ink-jet application type composition for wiring-line protection which can form layers that are excellent in terms of pattern retentivity and moisture resistance at high temperatures, have satisfactory adhesiveness to the circuits or metal wiring lines of the semiconductor device over a long period, and are less apt to suffer ion migration. The ink-jet application type composition for wiring-line protection comprises (A) one or more cationic photopolymerizable compounds including an alicyclic epoxy compound, (B) a cationic photopolymerization initiator, and (C) a silane coupling agent, wherein the silane coupling agent is contained in an amount of 1-50 parts by mass per 100 parts by mass of the cationic photopolymerizable compounds. The ink-jet application type composition for wiring-line protection has a viscosity, as measured with an E-type viscometer at 25° C. and 20 rpm, of 5-50 mPa.Math.s.
SEMICONDUCTOR PACKAGE
A semiconductor package includes; an interposer mounted on a package substrate, a first semiconductor device and a second semiconductor device mounted on the interposer, a molding member including an outer side wall portion covering an outer side surface of the first semiconductor device, and a lower portion covering at least a portion of an upper surface of the interposer, and a capping structure including an outer side wall portion covering the outer side wall portion of the molding member.
SEMICONDUCTOR PACKAGE
A semiconductor package includes; an interposer mounted on a package substrate, a first semiconductor device and a second semiconductor device mounted on the interposer, a molding member including an outer side wall portion covering an outer side surface of the first semiconductor device, and a lower portion covering at least a portion of an upper surface of the interposer, and a capping structure including an outer side wall portion covering the outer side wall portion of the molding member.
SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE
Provided is a semiconductor element including: a multilayer structure including: a conductive substrate; and an oxide semiconductor film arranged directly on the conductive substrate or over the conductive substrate via a different layer, the oxide semiconductor film including an oxide, as a major component, having a corundum structure, the conductive substrate having a larger area than the oxide semiconductor film.
Curable resin film and first protective film forming sheet
This curable resin film forms a first protective film on a surface having bumps of a semiconductor wafer by being attached to the surface and being cured, in which a cured material of the curable resin film has a Young's modulus of equal to or greater than 0.02 MPa and a peak value of a load measured by a probe tack test at 80° C. is equal to or less than 500 g. A first protective film forming sheet is provided with a first supporting sheet, and the curable resin film is provided on one surface of the first supporting sheet.
Curable resin film and first protective film forming sheet
This curable resin film forms a first protective film on a surface having bumps of a semiconductor wafer by being attached to the surface and being cured, in which a cured material of the curable resin film has a Young's modulus of equal to or greater than 0.02 MPa and a peak value of a load measured by a probe tack test at 80° C. is equal to or less than 500 g. A first protective film forming sheet is provided with a first supporting sheet, and the curable resin film is provided on one surface of the first supporting sheet.
Display device
A display device includes a display circuit layer including a first surface and a second surface and including a display area in which an image is displayed on the first surface, a heat conductive sheet overlapping the display circuit layer below the second surface, and an optical fingerprint sensor inside the display area below the heat conductive sheet and overlapping the display circuit layer. The heat conductive sheet includes a first area overlapping the optical fingerprint sensor and a second area overlapping the display area around the optical fingerprint sensor. The heat conductive sheet includes a heat conductive material, has a shape having a light transmittance required for sensing by the optical fingerprint sensor in the first area, and has no light transmittance in the second area.
Connection electrode and method for manufacturing connection electrode
A connection electrode includes a first metal film, a second metal film, a mixed layer, and an extraction electrode. The second metal film is located on the first metal film, and the extraction electrode is located on the second metal film. The mixed layer includes a mix of metal particles of the first and second metal films. As viewed in a first direction in which the first metal film and the second metal film are on top of each other, at least a portion of the mixed layer is in a first region that overlaps a bonding plane between the extraction electrode and the second metal film.
Connection electrode and method for manufacturing connection electrode
A connection electrode includes a first metal film, a second metal film, a mixed layer, and an extraction electrode. The second metal film is located on the first metal film, and the extraction electrode is located on the second metal film. The mixed layer includes a mix of metal particles of the first and second metal films. As viewed in a first direction in which the first metal film and the second metal film are on top of each other, at least a portion of the mixed layer is in a first region that overlaps a bonding plane between the extraction electrode and the second metal film.