A semiconductor package includes a semiconductor die with an active surface and an inactive surface, the active surface including metal pillars providing electrical connections to functional circuitry of the semiconductor die, and a backside metal layer on the inactive surface. The backside metal layer is attached to the inactive surface. The semiconductor package further includes a plurality of leads with each of the leads including an internal leadfinger portion and an exposed portion that includes a bonding portion. Distal ends of the metal pillars are in contact with and electrically coupled to the internal leadfinger portions. The backside metal layer is exposed on an outer surface of the semiconductor package. The bonding portions and the backside metal layer approximately planar to each other.

A module includes: a substrate having a first face; a plurality of components mounted on the first face; a resin film that covers the plurality of components along contours of the plurality of components and also covers a part of the first face; and a shield film formed to overlap the resin film. The first face is provided with a ground electrode. The resin film has an opening, and the shield film is connected to the ground electrode via the opening.

The present disclosure relates to a radio frequency (RF) device including a device substrate, a thinned device die with a device region over the device substrate, a first mold compound, and a second mold compound. The device region includes an isolation portion, a back-end-of-line (BEOL) portion, and a front-end-of-line (FEOL) portion with a contact layer and an active section. The contact layer resides over the BEOL portion, the active section resides over the contact layer, and the isolation portion resides over the contact layer to encapsulate the active section. The first mold compound resides over the device substrate, surrounds the thinned device die, and extends vertically beyond the thinned device die to define an opening over the thinned device die and within the first mold compound. The second mold compound fills the opening and directly connects the isolation portion of the thinned device die.

An integrated circuit and method of making an integrated circuit is provided. The integrated circuit includes an electrically conductive pad having a generally planar top surface that includes a cavity having a bottom surface and sidewalls extending from the bottom surface of the cavity to the top surface of the pad. An electronic device is attached to the top surface of the electrically conductive pad. A wire bond is attached from the electronic device to the bottom surface of the cavity. A molding compound encapsulates the electronic device.

An integrated circuit and method of making an integrated circuit is provided. The integrated circuit includes an electrically conductive pad having a generally planar top surface that includes a cavity having a bottom surface and sidewalls extending from the bottom surface of the cavity to the top surface of the pad. An electronic device is attached to the top surface of the electrically conductive pad. A wire bond is attached from the electronic device to the bottom surface of the cavity. A molding compound encapsulates the electronic device.

A high-frequency electronic component includes a ceramic multilayer substrate, ground electrodes provided at different layers of the ceramic multilayer substrate, and a shielding film covering at least a side surface among surfaces of the ceramic multilayer substrate. Two or more of the ground electrodes are exposed to the side surface of the ceramic multilayer substrate but do not protrude from this side surface, and are electrically connected to the shielding film. On the side surface of the ceramic multilayer substrate, the two or more of the ground electrodes at least partially overlap each other in a thickness direction of the ceramic multilayer substrate, with a distance in the thickness direction between the overlapping ground electrodes being 5 μm or greater.

A high-frequency electronic component includes a ceramic multilayer substrate, ground electrodes provided at different layers of the ceramic multilayer substrate, and a shielding film covering at least a side surface among surfaces of the ceramic multilayer substrate. Two or more of the ground electrodes are exposed to the side surface of the ceramic multilayer substrate and are electrically connected to the shielding film. On the side surface of the ceramic multilayer substrate, the two or more of the ground electrodes do not overlap each other in a thickness direction of the ceramic multilayer substrate.

An electronic component module includes a substrate having a main surface, an electronic component mounted on the main surface, a sealing resin having an insulation property and covering the electronic component and the main surface, and a conductive film that covers an outer surface of the sealing resin. The electronic component includes a housing whose outer surface has an insulation property, and a first external electrode arranged at one end of the housing. The electronic component module includes a conductive auxiliary layer that covers a part of the first external electrode and a part of the housing on a side of the electronic component opposite to the substrate. The sealing resin has a recessed portion that exposes the conductive auxiliary layer. A conductive portion is formed in the recessed portion and is connected to the conductive film and the conductive auxiliary layer.

A power semiconductor module arrangement includes: a housing; first and second electrical contacts within the housing; and a mounting arrangement including a frame or body and first and second terminal elements. The mounting arrangement is inserted in and coupled to the housing. First ends of the first and second terminal elements mechanically and electrically contact the first and second electrical contacts, respectively. A middle part of each terminal element extends through the frame or body. A second end of each terminal element extends outside the housing. The first terminal element is dielectrically insulated from the second terminal element by a portion of the frame or body. The first terminal element is injected into and inextricably coupled to the frame or body. The second terminal element is arranged within a hollow space inside the frame or body and is detachably coupled to the frame or body.

An electronic device (e.g., integrated circuit) and method of making the electronic device is provided that reduces a strength of an electric field generated outside a package of the electronic device proximate to the low voltage lead pins. The electronic device includes a low voltage side and a high voltage side. The low voltage side includes a low voltage die attached to a low voltage die attach pad. Similarly, the high voltage side includes a high voltage die attached to a high voltage die attach pad. Lead pins are attached to each of the low and high voltage attach pads and extend out from a package of the electronic device in an inverted direction.