A power module includes an insulating substrate, a case member, a power semiconductor element, a base member, a sealing member, and an adhesive member. The insulating substrate has a first surface and a second surface opposite to the first surface. The case member surrounds the insulating substrate when viewed in a direction perpendicular to the first surface. The power semiconductor element faces the first surface. The base member faces the second surface. The sealing member seals the power semiconductor element and the insulating substrate and is in contact with the case member. The adhesive member fixes the base member and the case member, and surrounds the insulating substrate when viewed in the direction perpendicular to the first surface.

Method of manufacturing a photovoltaic module comprising at least a first layer and a second layer affixed to each other by means of an encapsulant, said method comprising a lamination step wherein the encapsulant material comprises a silane-modified polyolefin having a melting point below 90° C., pigment particles and an additive comprising a cross-linking catalyst; and wherein in said lamination step heat and pressure are applied to the module, said heat being applied at a temperature between 60° C. and 125° C.

A packaged electronic module for downhole applications, in particular in a petrochemical well or similar environment. The electronic module includes one or more electronic components located on each side of a substrate, where the one or more electronic components are attached to the substrate by means of glue.

A packaged electronic module for downhole applications, in particular in a petrochemical well or similar environment. The electronic module includes one or more electronic components located on each side of a substrate, where the one or more electronic components are attached to the substrate by means of glue.

A high frequency module includes a power amplifier and a substrate on which the power amplifier is mounted. The power amplifier includes a first external terminal and a second external terminal formed on a mounting surface. The substrate includes a first land electrode and a second land electrode formed on one principal surface. The first external terminal is connected to the first land electrode, and the second external terminal is connected to the second land electrode. A distance from the mounting surface to a connection surface of the first external terminal is shorter than a distance from the mounting surface to a connection surface of the second external terminal, and a distance from a connection surface of the first land electrode to the one principal surface is longer than a distance from a connection surface of the second land electrode to the one principal surface.

Semiconductor device packages and associated methods are disclosed herein. In some embodiments, the semiconductor device package includes (1) a first surface and a second surface opposite the first surface; (2) a semiconductor die positioned between the first and second surfaces; and (3) an indication positioned in a designated area of the first surface. The indication includes a code presenting information for operating the semiconductor die. The code is configured to be read by an indication scanner coupled to a controller.

Semiconductor device packages and associated methods are disclosed herein. In some embodiments, the semiconductor device package includes (1) a first surface and a second surface opposite the first surface; (2) a semiconductor die positioned between the first and second surfaces; and (3) an indication positioned in a designated area of the first surface. The indication includes a code presenting information for operating the semiconductor die. The code is configured to be read by an indication scanner coupled to a controller.

The disclosure provides a chipset and a manufacturing method thereof. The chipset includes multiple logic cores and a memory chip. The logic cores respectively have a first device layer and a first substrate layer, and respectively include multiple first bonding elements and a first input/output circuit. The first bonding elements are provided in the first device layer. The first input/output circuit is provided in the first device layer. The memory chip has a second device layer and a second substrate layer, and includes second bonding elements and second input/output circuits. The second bonding elements are arranged in the second device layer. The second input/output circuits are arranged in the second device layer, and are respectively connected to the first input/output circuits of the logic cores.

A semiconductor package includes a semiconductor chip formed with a non-volatile semiconductor memory, a resin encapsulation that encapsulates the semiconductor chip, electrodes in a lattice (solder balls) formed and arrayed in a lattice on a bottom surface of the resin encapsulation. The solder balls include a signal electrode formed within the central region of the array and a dummy electrode formed outside the signal electrode.

A semiconductor package includes a semiconductor chip formed with a non-volatile semiconductor memory, a resin encapsulation that encapsulates the semiconductor chip, electrodes in a lattice (solder balls) formed and arrayed in a lattice on a bottom surface of the resin encapsulation. The solder balls include a signal electrode formed within the central region of the array and a dummy electrode formed outside the signal electrode.