A semiconductor package includes an interposer chip having a frontside, a backside, and a corner area on the backside defined by a first corner edge and a second corner edge of the interposer chip. A die is bonded to the frontside of the interposer chip. At least one dam structure is formed on the corner area of the backside of the interposer chip. The dam structure includes an edge aligned to at least one the first corner edge and the second corner edge of the interposer chip.

A module includes an electronic component, an enclosure at least partially enclosing the electronic component and defining a module interface at which the module is configured to be mounted on a mounting base, and a gas flow-inhibiting sealing at the module interface and configured to inhibit gas from propagating from an exterior of the module towards the electronic component. An electronic device that includes the module and a method of manufacturing the module are also described.

A module includes a substrate including a first surface, at least one first component mounted on the first surface, a shield member mounted on the first surface to cover the first component, and a first sealing resin arranged at least between the shield member and the first surface. The shield member includes a top surface portion in a form of a plate and a plurality of leg portions that extend from the top surface portion toward the first surface.

Embodiments described herein may be related to apparatuses, processes, and techniques directed to a protective coating for an edge of a glass layer, in particular a glass core within a substrate of a package, where the protective coating serves to protect the edge of the glass core and fill in cracks at the edges of the glass. This protective coating will decrease cracking during stresses applied to the glass layer during manufacturing or operation. Other embodiments may be described and/or claimed.

An electroluminescent device, includes: a base substrate; a light emitting unit provided on the base substrate; a first accommodating structure surrounding the light emitting unit and provided on the base substrate; a first color rendering material filled in the first accommodating structure; a first inorganic thin film encapsulation layer covering the light emitting unit and the first color rendering material; a second accommodating structure provided on one side of the first inorganic thin film encapsulation layer distal to the first color rendering material; a second color rendering material filled in the second accommodating structure; and a second inorganic thin film encapsulation layer sealing the second color rendering material in the second accommodating structure; wherein the first color rendering material and the second color rendering material are capable of producing a color development reaction after mixture.

An electroluminescent device, includes: a base substrate; a light emitting unit provided on the base substrate; a first accommodating structure surrounding the light emitting unit and provided on the base substrate; a first color rendering material filled in the first accommodating structure; a first inorganic thin film encapsulation layer covering the light emitting unit and the first color rendering material; a second accommodating structure provided on one side of the first inorganic thin film encapsulation layer distal to the first color rendering material; a second color rendering material filled in the second accommodating structure; and a second inorganic thin film encapsulation layer sealing the second color rendering material in the second accommodating structure; wherein the first color rendering material and the second color rendering material are capable of producing a color development reaction after mixture.

An imaging element according to the present disclosure is an imaging element flip-chip mounted on a wiring substrate, in which a projection is provided on a side surface of the imaging element such that a bottom surface side of the imaging element projects from a top surface side. Then, in the imaging device according to the present disclosure, the imaging device is flip-chip mounted on the wiring substrate so that a top surface of the imaging element faces the wiring substrate, and an outer periphery of the imaging element on the wiring substrate is sealed with a sealing material. An adhesion site of the sealing material is urged to a side of the projection, so that penetration of a solute and a solvent forming the sealing material may be reduced.

An imaging element according to the present disclosure is an imaging element flip-chip mounted on a wiring substrate, in which a projection is provided on a side surface of the imaging element such that a bottom surface side of the imaging element projects from a top surface side. Then, in the imaging device according to the present disclosure, the imaging device is flip-chip mounted on the wiring substrate so that a top surface of the imaging element faces the wiring substrate, and an outer periphery of the imaging element on the wiring substrate is sealed with a sealing material. An adhesion site of the sealing material is urged to a side of the projection, so that penetration of a solute and a solvent forming the sealing material may be reduced.

A light-emitting device includes a substrate, a light-emitting element provided on the substrate, the light-emitting element being configured to emit a first light, a wavelength conversion layer provided on the light-emitting element and containing a plurality of wavelength conversion particles configured to convert a wavelength of a part of the first light and to emit a second light, a light-transmissive plate provided above the wavelength conversion layer, and a wall including a light-reflective material, the wall surrounding the wavelength conversion layer and the light-transmissive plate and being in contact with a lateral surface of the light-transmissive plate at an inner surface of the wall. An upper portion of the wavelength conversion layer includes protrusions and recesses defined by the plurality of wavelength conversion particles. The wavelength conversion layer and the light-transmissive plate define an air layer therebetween.

A power semiconductor module includes a first substrate, wherein the first substrate includes aluminum, a first aluminum oxide layer arranged on the first substrate, a conductive layer arranged on the first aluminum oxide layer, a first semiconductor chip, wherein the first semiconductor chip is arranged on the conductive layer and is electrically connected thereto, and an electrical insulation material enclosing the first semiconductor chip, wherein the first aluminum oxide layer is configured to electrically insulate the first semiconductor chip from the first substrate.