An electronic component may include a carrier, and a thermoelectric sensor and a power transistor which are arranged on the carrier. The power transistor may include a base layer containing a transistor material chosen from among gallium nitride, aluminium gallium nitride, gallium arsenide, indium gallium, indium gallium nitride, aluminium nitride, indium aluminium nitride, and mixtures thereof. The electronic component may be configured so that the thermoelectric sensor generates an electric current under the effect of heating from the power transistor.

A method for producing a 3D semiconductor device: providing a first level with a first single crystal layer; forming control circuitry of first transistors in and/or on the first level with a first metal layer above; forming a second metal layer above the first metal layer; forming a third metal layer above the second metal layer; forming at least one second level on top of or above the third metal layer; performing additional processing steps to form a plurality of second transistors within the second level; forming a fourth and fifth metal layers above second level; a global power distribution grid includes fifth metal, and local power distribution grid includes the second metal layer, where the fifth metal layer thickness is at least 50% greater than the second metal layer thickness.

A method for producing a 3D semiconductor device: providing a first level with a first single crystal layer; forming control circuitry of first transistors in and/or on the first level with a first metal layer above; forming a second metal layer above the first metal layer; forming a third metal layer above the second metal layer; forming at least one second level on top of or above the third metal layer; performing additional processing steps to form a plurality of second transistors within the second level; forming a fourth and fifth metal layers above second level; a global power distribution grid includes fifth metal, and local power distribution grid includes the second metal layer, where the fifth metal layer thickness is at least 50% greater than the second metal layer thickness.

A semiconductor device includes a first transistor that flows a current to a load, a current generation circuit that outputs a current corresponding to a power consumption of the first transistor, a temperature sensor, a resistor-capacitor network coupled between the current generation circuit and the temperature sensor and an overheat detection circuit coupled to a connection point of the current generation circuit and the resistor-capacitor network, wherein the resistor-capacitor network comprises a resistor and a capacitor corresponding to a thermal resistance and a thermal capacitance between the first transistor and the temperature sensor.

A semiconductor device includes a first transistor that flows a current to a load, a current generation circuit that outputs a current corresponding to a power consumption of the first transistor, a temperature sensor, a resistor-capacitor network coupled between the current generation circuit and the temperature sensor and an overheat detection circuit coupled to a connection point of the current generation circuit and the resistor-capacitor network, wherein the resistor-capacitor network comprises a resistor and a capacitor corresponding to a thermal resistance and a thermal capacitance between the first transistor and the temperature sensor.

A first package is bonded to a first substrate with first external connections and second external connections. The second external connections are formed using materials that are different than the first external connections in order to provide a thermal pathway from the first package. In a particular embodiment the first external connections are solder balls and the second external connections are copper blocks.

A 3D semiconductor device including: a first level including a single crystal silicon layer and a plurality of first transistors, the plurality of first transistors each including a single crystal channel; a first metal layer overlaying the plurality of first transistors; a second metal layer overlaying the first metal layer; a third metal layer overlaying the second metal layer; a second level is disposed above the third metal layer, where the second level includes a plurality of second transistors; a fourth metal layer disposed above the second level; and a connective path between the fourth metal layer and either the third metal layer or the second metal layer, where the connective path includes a via disposed through the second level, where the via has a diameter of less than 800 nm and greater than 5 nm, and where at least one of the plurality of second transistors includes a metal gate.

A 3D semiconductor device including: a first level including a single crystal silicon layer and a plurality of first transistors, the plurality of first transistors each including a single crystal channel; a first metal layer overlaying the plurality of first transistors; a second metal layer overlaying the first metal layer; a third metal layer overlaying the second metal layer; a second level is disposed above the third metal layer, where the second level includes a plurality of second transistors; a fourth metal layer disposed above the second level; and a connective path between the fourth metal layer and either the third metal layer or the second metal layer, where the connective path includes a via disposed through the second level, where the via has a diameter of less than 800 nm and greater than 5 nm, and where at least one of the plurality of second transistors includes a metal gate.

A semiconductor device includes a switching element, a control circuit, and a first and second temperature detectors. The control circuit controls the switching element and have an overcurrent detection circuit for the switching element. The first temperature detector detects the temperature of the switching element and the second temperature detector detects the temperature of the control circuit. The control circuit includes a reference correction circuit for correcting an overcurrent reference value of the overcurrent detection circuit on the basis of a first detection value and a second detection value detected by the first and second temperature detectors and outputting a corrected overcurrent reference value.

A semiconductor device includes a vapor chamber lid for high power applications such as chip-on-wafer-on-substrate (CoWoS) applications using high performance processors (e.g., graphics processing unit (GPU)) and methods of manufacturing the same. The vapor chamber lid provides a thermal solution which enhances the thermal performance of a package with multiple chips. The vapor chamber lid improves hot spot dissipation in high performance chips, for example, at the three-dimensional (3D-IC) packaging level.