Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises, a package substrate, an interposer on the package substrate, a first die cube and a second die cube on the interposer, wherein the interposer includes conductive traces for electrically coupling the first die cube to the second die cube, a die on the package substrate, and an embedded multi-die interconnect bridge (EMIB) in the package substrate, wherein the EMIB electrically couples the interposer to the die.

Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a die having a first surface and an opposing second surface; a capacitor having a surface, wherein the surface of the capacitor is coupled to the first surface of the die; and a conductive pillar coupled to the first surface of the die. In some embodiments, a microelectronic assembly may include a capacitor in a first dielectric layer; a conductive pillar in the first dielectric layer; a first die having a surface in the first dielectric layer; and a second die having a surface in a second dielectric layer, wherein the second dielectric layer is on the first dielectric layer, and wherein the surface of the second die is coupled to the capacitor, to the surface of the first die, and to the conductive pillar.

A package includes at least one memory component and an insulating encapsulation. The at least one memory component includes a stacked memory structure and a plurality of conductive posts. The stacked memory structure is laterally encapsulated in a molding compound. The conductive posts are disposed on an upper surface of the stacked memory structure. The upper surface of the stacked memory structure is exposed from the molding compound. The insulating encapsulation encapsulates the at least one memory component. The top surfaces of the conductive posts are exposed form the insulating encapsulation. A material of the molding compound is different a material of the insulating encapsulation.

A 3D-IC includes a first tier device and a second tier device. The first tier device and the second tier device are vertically stacked together. The first tier device includes a first substrate and a first interconnect structure formed over the first substrate. The second tier device includes a second substrate, a doped region formed in the second substrate, a dummy gate formed over the substrate, and a second interconnect structure formed over the second substrate. The 3D-IC also includes an inter-tier via extends vertically through the second substrate. The inter-tier via has a first end and a second end opposite the first end. The first end of the inter-tier via is coupled to the first interconnect structure. The second end of the inter-tier via is coupled to one of: the doped region, the dummy gate, or the second interconnect structure.

Various implementations described herein refer to a device having logic circuitry with transistors and gate lines. The device may include a backside power network having buried supply rails with at least one buried supply rail having a continuity break. The transistors may be arranged in a cell architecture having an N-well break with the gate lines passing through the N-well break and the continuity break.

Provided are a heat dissipation structure, a method for forming a heat dissipation structure, and a semiconductor structure. The heat dissipation structure includes a first heat dissipation ring and a second heat dissipation ring. The first heat dissipation ring is formed in a dielectric layer around a Through Silicon Via (TSV) and in contact with the TSV. The TSV passes through a silicon substrate and the dielectric layer. The second heat dissipation ring is formed around the first heat dissipation ring, and in contact with the first heat dissipation ring. The second heat dissipation ring has a heat dissipation gap within it. A dimension of the second heat dissipation ring in a first direction is less than that of the first heat dissipation ring in the first direction. The first direction is a thickness direction of the silicon substrate.

The present application provides a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: providing a stacked structure, the stacked structure includes a first chip and a second chip; forming a through silicon via (TSV) in the stacked structure, the TSV includes a first part and a second part communicating with the first part, a sidewall of the first part is a vertical sidewall, and a sidewall of the second part is an inclined sidewall; forming an insulating layer on the sidewall of the first part; and forming a conductive layer in the TSV.

The present application provides a semiconductor structure and a manufacturing method thereof. The manufacturing method includes: providing a stacked structure, the stacked structure includes a first chip and a second chip; forming a through silicon via (TSV) in the stacked structure, the TSV includes a first part and a second part communicating with the first part, a sidewall of the first part is a vertical sidewall, and a sidewall of the second part is an inclined sidewall; forming an insulating layer on the sidewall of the first part; and forming a conductive layer in the TSV.

A semiconductor chip includes: a semiconductor substrate; a pad insulating layer on the semiconductor substrate; a through electrode which penetrates the semiconductor substrate and the pad insulating layer and includes a conductive plug and a conductive barrier layer surrounding a sidewall of the conductive plug; and a bonding pad which surrounds a sidewall of the through electrode and is spaced apart from the conductive plug with the conductive barrier layer disposed therebetween.

A method for forming a semiconductor structure includes the following operations. A substrate is provided, and the substrate includes an active surface and a back surface opposite to the active surface. An etching stop layer is formed on the back surface of the substrate. The substrate is fixed onto a first temporary carrier to make the etching stop layer be located between the substrate and the first temporary carrier. The substrate is etched until reaching the etching stop layer to form a via structure penetrating through the substrate.