A method is provided for fabricating a semiconductor wafer having a device side, a back side opposite the device side and an outer periphery edge. Suitably, the method includes: forming a top conducting layer on the device side of the semiconductor wafer; forming a passivation layer over the top conducting layer, the passivation layer being formed so as not to extend to the outer periphery edge of the semiconductor wafer; and forming a protective layer over the passivation layer, the protective layer being spin coated over the passivation layer so as to have a smooth top surface at least in a region proximate to the outer periphery edge of the semiconductor wafer.

A method is provided for fabricating a semiconductor wafer having a device side, a back side opposite the device side and an outer periphery edge. Suitably, the method includes: forming a top conducting layer on the device side of the semiconductor wafer; forming a passivation layer over the top conducting layer, the passivation layer being formed so as not to extend to the outer periphery edge of the semiconductor wafer; and forming a protective layer over the passivation layer, the protective layer being spin coated over the passivation layer so as to have a smooth top surface at least in a region proximate to the outer periphery edge of the semiconductor wafer.

Provided herein are wafers that can be used to align carbon nanotubes, as well as methods of making and using the same. Such wafers include alignment areas that have four sides and a surface charge, where the alignment areas are surrounded by areas that have a surface charge of a different polarity. Methods of the disclosure may include depositing and selectively etching a number of hardmasks on a substrate. The described methods may also include depositing a carbon nanotube on such a wafer.

Provided herein are wafers that can be used to align carbon nanotubes, as well as methods of making and using the same. Such wafers include alignment areas that have four sides and a surface charge, where the alignment areas are surrounded by areas that have a surface charge of a different polarity. Methods of the disclosure may include depositing and selectively etching a number of hardmasks on a substrate. The described methods may also include depositing a carbon nanotube on such a wafer.

The present disclosure relates to an integrated package having an active area, an electrical routing circuit, an optical routing circuit, and a vacuum vessel. Methods of making such a package are also described herein.

A semiconductor device includes a semiconductor die, an electrical contact arranged on a surface of the semiconductor die, and a metal layer arranged on the electrical contact, wherein the metal layer includes a singulated part of at least one of a metal foil, a metal sheet, a metal leadframe, or a metal plate. When viewed in a direction perpendicular to the surface of the semiconductor die, a footprint of the electrical contact and a footprint of the metal layer are substantially congruent.

A semiconductor device includes a semiconductor die, an electrical contact arranged on a surface of the semiconductor die, and a metal layer arranged on the electrical contact, wherein the metal layer includes a singulated part of at least one of a metal foil, a metal sheet, a metal leadframe, or a metal plate. When viewed in a direction perpendicular to the surface of the semiconductor die, a footprint of the electrical contact and a footprint of the metal layer are substantially congruent.

Embodiments of a marking pattern in forming the staircase structure of a three-dimensional (3D) memory device are provided. In an example, a semiconductor device includes a stack structure having insulating layers and conductor layers arranged alternatingly over a substrate along a vertical direction; and a marking pattern having interleaved layers over the substrate and neighboring the stack structure. The marking pattern includes a central marking structure located in a marking area. The central marking structure consists of interleaved layers and divides the marking area into a first marking sub-area and a second marking sub-area. A first pattern density of the first marking sub-area is higher than or equal to a second pattern density of the second marking sub-area.

Embodiments of a marking pattern in forming the staircase structure of a three-dimensional (3D) memory device are provided. In an example, a semiconductor device includes a stack structure having insulating layers and conductor layers arranged alternatingly over a substrate along a vertical direction; and a marking pattern having interleaved layers over the substrate and neighboring the stack structure. The marking pattern includes a central marking structure located in a marking area. The central marking structure consists of interleaved layers and divides the marking area into a first marking sub-area and a second marking sub-area. A first pattern density of the first marking sub-area is higher than or equal to a second pattern density of the second marking sub-area.

A method for manufacturing a semiconductor device includes preparing a first substrate provided with a first pattern on a first surface, and a semiconductor chip having a second surface, and a third surface opposite to the second surface, and including a second pattern provided on the second surface, recognizing the first pattern from a position near the first surface among the first surface and an opposite surface thereof in the first substrate, recognizing the second pattern by transmitting through the semiconductor chip from a position near the third surface among the second surface and the third surface in the semiconductor chip, aligning the semiconductor chip and the first substrate based on a recognition result of the first pattern and the second pattern, and bonding the semiconductor chip to the first substrate so that the second surface faces the first surface.