A foil-based package and a method for manufacturing a foil-based package includes, among other things, a first and a second foil substrate. An electronic component is arranged between the two foil substrates in a sandwich-like manner. Due to the component thickness, there is a distance difference between the two foil substrates between the mounting area of the component and ears outside of the mounting area. The foil-based package and the method provides means for reducing and/or compensating a distance difference between the first foil substrate and the second foil substrate caused by the component thickness.

A semiconductor device has a first build-up interconnect structure formed over a substrate. The first build-up interconnect structure includes an insulating layer and conductive layer formed over the insulating layer. A vertical interconnect structure and semiconductor die are disposed over the first build-up interconnect structure. The semiconductor die, first build-up interconnect structure, and substrate are disposed over a carrier. An encapsulant is deposited over the semiconductor die, first build-up interconnect structure, and substrate. A second build-up interconnect structure is formed over the encapsulant. The second build-up interconnect structure electrically connects to the first build-up interconnect structure through the vertical interconnect structure. The substrate provides structural support and prevents warpage during formation of the first and second build-up interconnect structures. The substrate is removed after forming the second build-up interconnect structure. A portion of the insulating layer is removed exposing the conductive layer for electrical interconnect with subsequently stacked semiconductor devices.

A semiconductor device has a first build-up interconnect structure formed over a substrate. The first build-up interconnect structure includes an insulating layer and conductive layer formed over the insulating layer. A vertical interconnect structure and semiconductor die are disposed over the first build-up interconnect structure. The semiconductor die, first build-up interconnect structure, and substrate are disposed over a carrier. An encapsulant is deposited over the semiconductor die, first build-up interconnect structure, and substrate. A second build-up interconnect structure is formed over the encapsulant. The second build-up interconnect structure electrically connects to the first build-up interconnect structure through the vertical interconnect structure. The substrate provides structural support and prevents warpage during formation of the first and second build-up interconnect structures. The substrate is removed after forming the second build-up interconnect structure. A portion of the insulating layer is removed exposing the conductive layer for electrical interconnect with subsequently stacked semiconductor devices.

Shielded radio-frequency (RF) module having reduced area. In some embodiments, a method for fabricating a radio-frequency module includes forming or providing a packaging substrate configured to receive a plurality of components. The method may include mounting one or more devices on the packaging substrate such that the packaging substrate includes a first area associated with mounting of each of the one or more devices. In some embodiments, the method further includes forming a plurality of shielding wirebonds on the packaging substrate to provide RF shielding functionality for one or more regions on the packaging substrate, such that the packaging substrate includes a second area associated with formation of each shielding wirebond, the mounting of each device implemented with respect to a corresponding shielding wirebond such that a portion of the first area associated with the device overlaps at least partially with a portion of the second area associated with the corresponding shielding wirebond.

Shielded radio-frequency (RF) module having reduced area. In some embodiments, a method for fabricating a radio-frequency module includes forming or providing a packaging substrate configured to receive a plurality of components. The method may include mounting one or more devices on the packaging substrate such that the packaging substrate includes a first area associated with mounting of each of the one or more devices. In some embodiments, the method further includes forming a plurality of shielding wirebonds on the packaging substrate to provide RF shielding functionality for one or more regions on the packaging substrate, such that the packaging substrate includes a second area associated with formation of each shielding wirebond, the mounting of each device implemented with respect to a corresponding shielding wirebond such that a portion of the first area associated with the device overlaps at least partially with a portion of the second area associated with the corresponding shielding wirebond.

According to one embodiment, a magnetic memory device includes a magnetic memory chip having a magnetoresistive element, a magnetic layer having first and second portions spacing out each other, the first portion covering a first main surface of the magnetic memory chip, the second portion covering a second main surface facing the first main surface of the magnetic memory chip, a circuit board on which the magnetic layer is mounted, and a bonding wire connecting between the magnetic memory chip and the circuit board in a first direction parallel to the first and second main surfaces.

A semiconductor structure includes a packaged semiconductor device having at least one device, a conductive pillar, an encapsulant over the at least one device and surrounding the conductive pillar, wherein the conductive pillar extends from a first major surface to a second major surface of the encapsulant, and is exposed at the second major surface and the at least one device is exposed at the first major surface. The packaged device also includes a conductive shield layer on the second major surface of the encapsulant and on minor surfaces of the encapsulant and an isolation region at the second major surface of the encapsulant between the encapsulant and the conductive pillar such that the conductive shield layer is electrically isolated from the conductive pillar. The semiconductor structure also includes a radio-frequency connection structure over and in electrical contact with the conductive pillar at the second major surface of the encapsulant.

A semiconductor structure includes a packaged semiconductor device having at least one device, a conductive pillar, an encapsulant over the at least one device and surrounding the conductive pillar, wherein the conductive pillar extends from a first major surface to a second major surface of the encapsulant, and is exposed at the second major surface and the at least one device is exposed at the first major surface. The packaged device also includes a conductive shield layer on the second major surface of the encapsulant and on minor surfaces of the encapsulant and an isolation region at the second major surface of the encapsulant between the encapsulant and the conductive pillar such that the conductive shield layer is electrically isolated from the conductive pillar. The semiconductor structure also includes a radio-frequency connection structure over and in electrical contact with the conductive pillar at the second major surface of the encapsulant.

A placement base (100) of a semiconductor device (90) comprises a body (10), to which a radiation agent (80) having viscosity is applied and on which a semiconductor device (90) is disposed, and a protrusion (20), which is placed in an outer periphery of the body (10) and on which the semiconductor device (90) is not disposed. A detective groove (30) for introducing the radiation agent (80) is provided on a surface of the protrusion (20).

A semiconductor device includes a lead frame comprising a first terminal and a second terminal for grounding, a sealing resin which covers the lead frame, an exposed part which is a part of the second terminal and is exposed from the sealing resin and a conductive material which covers the surface of the sealing resin and contacts the second terminal at the exposed part.