A semiconductor device package includes a first circuit layer and an emitting device. The first circuit layer has a first surface, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The emitting device is disposed on the second surface of the first circuit layer. The emitting device has a first surface facing the second surface of the first circuit layer, a second surface opposite to the first surface and a lateral surface extending between the first surface and the second surface. The emitting device has a conductive pattern disposed on the second surface of the emitting device. The lateral surface of the emitting device and the lateral surface of the first circuit layer are discontinuous.

A semiconductor thin film structure may include a substrate, a buffer layer on the substrate, and a semiconductor layer on the buffer layer, such that the buffer layer is between the semiconductor layer and the substrate. The buffer layer may include a plurality of unit layers. Each unit layer of the plurality of unit layers may include a first layer having first bandgap energy and a first thickness, a second layer having second bandgap energy and a second thickness, and a third layer having third bandgap energy and a third thickness. One layer having a lowest bandgap energy of the first, second, and third layers of the unit layer may be between another two layers of the first, second, and third layers of the unit layer.

The semiconductor device includes: a heat spreader; a semiconductor element joined to the heat spreader via a first joining member; a first lead frame joined to the heat spreader via a second joining member; a second lead frame joined to the semiconductor element via a third joining member; and a mold resin. In a cross-sectional shape obtained by cutting at a plane perpendicular to a one-side surface of the heat spreader, an angle on the third joining member side out of two angles formed by a one-side surface of the semiconductor element and a straight line connecting an end point of a joining surface between the third joining member and the semiconductor element and an end point of a joining surface between the third joining member and the second lead frame, is not smaller than 90° and not larger than 135°.

A semiconductor device having a channel between active sections or portions of the device is disclosed. An elastic material, such as dielectric or a polymer, is deposited into the channel and cured to increase flexibility and thermal expansion properties of the semiconductor device. The elastic material reduces the thermal and mechanical mismatch between the semiconductor device and the substrate to which the semiconductor device is coupled in downstream processing to improve reliability. The semiconductor device may also include a plurality of channels formed transverse with respect to each other. Some of the channels extend all the way through the semiconductor device, while other channels extend only partially through the semiconductor device.

An object is to provide a technique capable of suppressing generation of a crack in a molding resin and suppressing entry of moisture from the outside. A semiconductor device includes a heat spreader, a semiconductor element provided on an upper surface of the heat spreader, an insulating sheet provided on a lower surface of the heat spreader, a lead frame joined to an upper surface of the semiconductor element via solder, and a molding resin that seals one end side of the lead frame, the semiconductor element, the heat spreader, and the insulating sheet. A hole is formed from an upper surface of the molding resin to a joining surface of the lead frame with the semiconductor element, and the hole is filled with a low Young's modulus resin having a Young's modulus lower than that of the molding resin.

A semiconductor device includes: a semiconductor substrate; an upper surface electrode formed on an upper surface side of the semiconductor substrate; an insulating film formed on the upper surface side of the semiconductor substrate; and a lower surface electrode formed on a lower surface side of the semiconductor substrate and having a larger area than that of the upper surface electrode, wherein the upper surface electrode and the lower surface electrode are electrodes having a compressive stress.

A wheel sensor arrangement can include a first wheel speed sensor and a second wheel speed sensor. The first wheel speed sensor can include or be implemented with a first semiconductor die and can provide data regarding a speed of a rotating wheel. The second wheel speed sensor can also include or be implemented with a second semiconductor die and can provide data regarding the speed of the rotating wheel. The second semiconductor die can be galvanically isolated from the first semiconductor die. The wheel sensor arrangement can include a mold housing that forms around the first wheel speed sensor and the second wheel speed sensor. The mold housing can include a separation feature between the first sensor and the second sensor.

Integrated circuit (IC) chips are provided. An IC chip according to the present corner area between an outer corner of the device region and an inner corner of the ring region. The ring region includes a first active region extending along a first direction, a first source/drain contact disposed partially over the first active region and extending along the first direction, and first gate structures disposed completely over the first active region and each extending lengthwise along the first direction. The corner area includes a second active region extending along a second direction that forms an acute angle with the first direction, a second source/drain contact disposed partially over the second active region and extending along the second direction, and second gate structures disposed over the second active region and each extending along the first direction.

Integrated circuit (IC) chips and seal ring structures are provided. An IC chip according to the present disclosure includes an interconnect structure that includes a first metal line, a second metal line, a third metal line, a fourth metal line, and a fifth meal line extending along a first direction, a first group of lateral connectors disposed between the second metal line and the third metal line or between the fourth metal line and the fifth metal line, and a second group of lateral connectors disposed between the first metal line and the second metal line or between the third metal line and the fourth metal line.

A semiconductor chip, a semiconductor package including the same, and a method of fabricating the same, the semiconductor chip including a substrate that includes a device region and an edge region; a device layer and a wiring layer that are sequentially stacked on the substrate; a subsidiary pattern on the wiring layer on the edge region; a first capping layer that covers a sidewall of the subsidiary pattern, a top surface of the wiring layer, and a sidewall of the wiring layer, the first capping layer including an upper outer sidewall and a lower outer sidewall, the lower outer sidewall being offset from the upper outer sidewall; and a buried dielectric pattern in contact with the lower outer sidewall of the first capping layer and spaced apart from the upper outer sidewall of the first capping layer.