A semiconductor device including: an insulating circuit substrate including a principal surface and a back surface; semiconductor chips each including an electrode on a principal surface and having a back surface on an opposite side to the principal surface, the back surface being fixed to the principal surface of the insulating circuit substrate; a wiring substrate facing the principal surface side of the insulating circuit substrate, separated from the semiconductor chip; a conductive post fixed to the electrode of the semiconductor chips and the wiring substrate; and a resin sealing body sealing the insulating circuit substrate, the semiconductor chips, the wiring substrate, and the conductive posts in such a manner as to expose the back surface of the insulating circuit substrate, wherein the semiconductor chips are respectively arranged on sides on which two short sides are located, and the conductive post has a recessed portion on its peripheral surface.

A semiconductor device includes a carrier, a power semiconductor die that includes first and second opposite facing main surfaces, a side surface extending from the first main surface to the second main surface, and first and second electrodes disposed on the first and second main surfaces, respectively, a die attach material arranged between the carrier and the first electrode, wherein the die attach material forms a fillet at the side surface of the power semiconductor die, wherein a fillet height of the fillet is less than about 95% of a height of the power semiconductor die, wherein the height of the power semiconductor die is a length of the side surface, and wherein a maximum extension of the die attach material over edges of a main surface of the power semiconductor die facing the die attach material is less than about 200 micrometers.

A semiconductor module includes: a circuit board; a semiconductor chip having a first electrode pad on a first surface, bonded to the circuit board at a second surface that is opposite to the first surface, and having side surfaces intersecting the first surface and the second surface; an external terminal electrically connected to the first electrode pad; and an insulating member configured to fix the external terminal, wherein by the insulating member contacting the side surfaces of the semiconductor chip at a plurality of locations, parallel movement and rotational movement of the semiconductor chip relative to the insulating member in a plane parallel, to the first surface are restricted, and wherein the external terminal penetrates the insulating member.

A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.

To provide a semiconductor device 100 including a semiconductor element with a less warped chip. A semiconductor device manufacturing method include: bonding a rear surface of a chip having electrodes on both sides thereof to a front surface of a substrate; providing, to the front surface of the substrate to which the chip is bonded, a plating protective film having an opening at a position which is on the front surface of the chip and corresponds to an electrode at which plating is to be formed, after the bonding; plating the electrode of the chip after the providing; and removing the plating protective film from the substrate, after the plating.

A method for manufacturing a semiconductor device includes (i) a step of preparing a first semiconductor chip having a first electrode pad thereon and a second semiconductor chip having a second electrode pad thereon and larger in thickness than the first semiconductor chip, the second electrode pad being larger in size than the first electrode pad, (ii) a step of mounting the first semiconductor chip and the second semiconductor chip on the same planarized surface of a substrate having a uniform thickness, (iii) a step of bonding a ball formed by heating and melting a bonding wire to the second electrode pad, (iv) a step of first-bonding the bonding wire to the first electrode pad, and (v) a step of second-bonding the bonding wire to the ball.

Certain aspects of the present disclosure generally relate to a connection terminal pattern and layout for a three-level buck regulator. One example electronic module generally includes a substrate, an integrated circuit (IC) package disposed on the substrate and comprising transistors of a three-level buck regulator, a capacitive element of the three-level buck regulator disposed on the substrate, and an inductive element of the three-level buck regulator disposed on the substrate. In certain aspects, the capacitive element and the inductive element may be disposed adjacent to different sides of the IC package.

A chip package structure is provided. The chip package structure includes a redistribution structure and a first chip structure over the redistribution structure. The chip package structure also includes a first solder bump between the redistribution structure and the first chip structure and a first molding layer surrounding the first chip structure. The chip package structure further includes a second chip structure over the first chip structure and a second molding layer surrounding the second chip structure. In addition, the chip package structure includes a third molding layer surrounding the first molding layer, the second molding layer, and the first solder bump. A portion of the third molding layer is between the first molding layer and the redistribution structure.

A system for semiconductor wafer testing, a tangent probe card and a probe head assembly thereof. The system has a tangent probe card and a tester. Testing ends of the probe card are flat, hence the allowable alignment budget will always be more generous for the tangent probe card. The probes are held on the probe head assembly, and once the alignment is achieved accurately during manufacture, the alignment will remain stable throughout the whole life cycle. The probe has a greater CCC due to its larger cross section. The throughput of the tangent probes is higher than that of the conventional probe card since there is no need to move the pointed pin/structure. No pointed pin/structure needs to be repaired, and the flat bottom surface of the probe head assembly is easier to clean and maintain.

A semiconductor module includes: a semiconductor device; a bonding layer that is arranged on the semiconductor device, contains nickel or copper, and is electrically connected to the semiconductor device; a solder portion containing gold, disposed on the bonding layer; and a protective layer disposed directly on the bonding layer, covering an outer peripheral edge of the bonding layer.