H01L24/90

ELECTRODE CONNECTION ELEMENT, LIGHT-EMITTING DEVICE COMPRISING SAME, AND METHOD FOR PRODUCING LIGHT-EMITTING DEVICE
20210050323 · 2021-02-18 ·

The present disclosure relates to an electrode connection element, a light emitting apparatus including the same, and a method for manufacturing the light emitting apparatus, and more particularly, to an electrode connection element, a light emitting apparatus including the same, and a method for manufacturing the light emitting apparatus, which are for electrically connecting an electrode terminal and an external drive circuit.

An electrode connection element according to an exemplary embodiment includes: an upper connection member coming into contact with an upper surface of an electrode terminal formed on a substrate; a lower connection member configured to support a lower surface of the substrate; a connection member configured to connect the upper connection member and the lower connection member to each other.

Package structures

Package structures and methods of forming the same are disclosed. The package structure includes a package, a device and a screw. The package includes a plurality of dies, an encapsulant encapsulating the plurality of dies, and a redistribution structure over the plurality of dies and the encapsulant. The device is disposed over the package, wherein the dies and the encapsulant are disposed between the device and the redistribution structure. The screw penetrates through the package and the device.

Hybrid felts of electrospun nanofibers
RE049773 · 2024-01-02 · ·

The present invention relates generally to compositions for use in biological and chemical separations, as well as other applications. More specifically, the present invention relates to hybrid felts fabricated from electrospun nanofibers with high permeance and high capacity. Such hybrid felts utilize derivatized cellulose, and at least one non-cellulose-based polymer that may be removed from the felt by subjecting it to moderately elevated temperatures and/or solvents capable of dissolving the non-cellulose-based polymer to leave behind a porous nanofiber felt having more uniform pore sizes and other enhanced properties when compared to single component nanofiber felts.

FLIP CHIP ASSEMBLY
20200395265 · 2020-12-17 ·

This application is directed to a semiconductor system including a substrate, an electronic device, a plurality of compliant interconnects and a support structure. The substrate has a first surface and a plurality of first contacts formed on the first surface. The electronic device has a second surface facing the first surface of the substrate, and a plurality of second contacts formed on the second surface. The compliant interconnects are disposed between the first surface of the substrate and the second surface of the electronic device, and are configured to electrically couple the first contacts on the first surface of the substrate to the second contacts on the second surface of the electronic device. The support structure is coupled to the substrate and the electronic device, and extends beyond a footprint of the electronic device. The support structure is configured to mechanically couple the electronic device to the substrate.

IC PACKAGE WITH TOP-SIDE MEMORY MODULE
20200388598 · 2020-12-10 ·

A printed circuit board (PCB) system includes a first printed circuit board (PCB), an integrated circuit (IC) package, and a memory module. The IC package includes i) a package substrate, ii) a main IC chip that is electrically coupled to a top surface of the package substrate, iii) first contact structures that are disposed on a bottom surface of the package substrate and that are electrically coupled to the first PCB, and iv) second contact structures that are disposed on a top surface of the package substrate. The memory module includes i) a second PCB, ii) one or more memory IC chips that are disposed on the second PCB, and iii) third contact structures that are disposed on a bottom surface of the second PCB. An interposer electrically couples the second contact structures of the IC package with the third contact structures of the memory module.

POWER SWITCHING MODULE AND ELECTRONIC POWER DEVICE INTEGRATING SAID MODULE
20200382015 · 2020-12-03 ·

The power module comprises an electronic board (EB), in which at least one power switching branch is integrated, a capacitor (C.sub.E) and at least three DC power supply busbars (B1, B2, B3), wherein the electronic board is mounted between a first busbar (B1) and a second busbar (B2) and the capacitor is mounted between the second busbar (B2) and a third busbar (B3) and the electronic board, the capacitor and the busbars comprise electric contact faces allowing assembly, of the press pack type, of the electronic board and of the capacitor.

Semiconductor device and power convertor

A semiconductor device includes a first electrode plate, a second electrode plate disposed to oppose the first electrode plate, and a semiconductor chip disposed between the first electrode plate and the second electrode plate. At least one of the first electrode plate and the second electrode plate has a space where a cooling medium circulates.

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
20200321308 · 2020-10-08 ·

A semiconductor device is provided with a semiconductor element having a plurality of electrodes, a plurality of terminals electrically connected to the plurality of electrodes, and a sealing resin covering the semiconductor element. The sealing resin covers the plurality of terminals such that a bottom surface of the semiconductor element in a thickness direction is exposed. A first terminal, which is one of the plurality of terminals, is disposed in a position that overlaps a first electrode, which is one of the plurality of electrodes, when viewed in the thickness direction. The semiconductor device is provided with a conductive connection member that contacts both the first terminal and the first electrode.

Semiconductor device sub-assembly

We disclose herein a semiconductor device sub-assembly comprising: a plurality of semiconductor units laterally spaced to one another; a plurality of conductive blocks, wherein each conductive block is operatively coupled with each semiconductor unit; a conductive malleable layer operatively coupled with each conductive block, wherein the plurality of conductive blocks are located between the conductive malleable layer and the plurality of semiconductor units. In use, at least some of the plurality of conductive blocks are configured to apply a pressure on the conductive malleable layer, when a predetermined pressure is applied to the semiconductor device sub-assembly.

Semiconductor device and method for manufacturing semiconductor device
10707185 · 2020-07-07 · ·

A semiconductor device is provided with a semiconductor element having a plurality of electrodes, a plurality of terminals electrically connected to the plurality of electrodes, and a sealing resin covering the semiconductor element. The sealing resin covers the plurality of terminals such that a bottom surface of the semiconductor element in a thickness direction is exposed. A first terminal, which is one of the plurality of terminals, is disposed in a position that overlaps a first electrode, which is one of the plurality of electrodes, when viewed in the thickness direction. The semiconductor device is provided with a conductive connection member that contacts both the first terminal and the first electrode.