A semiconductor device is provided with a semiconductor element having a plurality of electrodes, a plurality of terminals electrically connected to the plurality of electrodes, and a sealing resin covering the semiconductor element. The sealing resin covers the plurality of terminals such that a bottom surface of the semiconductor element in a thickness direction is exposed. A first terminal, which is one of the plurality of terminals, is disposed in a position that overlaps a first electrode, which is one of the plurality of electrodes, when viewed in the thickness direction. The semiconductor device is provided with a conductive connection member that contacts both the first terminal and the first electrode.

The present invention relates generally to compositions for use in biological and chemical separations, as well as other applications. More specifically, the present invention relates to hybrid felts fabricated from electrospun nanofibers with high permeance and high capacity. Such hybrid felts utilize derivatized cellulose, and at least one non-cellulose-based polymer that may be removed from the felt by subjecting it to moderately elevated temperatures and/or solvents capable of dissolving the non-cellulose-based polymer to leave behind a porous nanofiber felt having more uniform pore sizes and other enhanced properties when compared to single component nanofiber felts.

To provide a pressure contact type semiconductor device stack which can uniformly pressurize pressure contact type semiconductor devices irrespective of presence or absence of a notch portion of the pressure contact type semiconductor device, and can prevent thermal destruction of the relevant pressure contact type semiconductor device. A pressurizing device for pressurizing between pressure contact type semiconductor devices and heat sinks which have been stacked is provided with pressuring bodies arranged at the upper and lower surfaces, metal fittings for insulating plate each for distributing a pressure applied by the pressuring body to an outer circumferential surface, and insulating plates each for pressuring the relevant heat sinks by the pressure applied to a pressurizing surface of the relevant metal fitting for insulating plate, the pressure contact type semiconductor device has a notch portion at a part of a peripheral portion of a post surface of any one of a collector post surface or an emitter post surface, and a device for making a distance from a pressurizing surface of the metal fitting for insulating plate pressurized by the upper surface pressurizing body to a front surface of a chip equal to a distance from a pressurizing surface of the metal fitting for insulating plate pressurized by the lower surface pressurizing body to a back surface of a chip is provided.

A semiconductor apparatus includes a first substrate having a first surface, a semiconductor device, a first flexible connecting member electrically connected to the semiconductor device, a first pad connected to the first flexible connecting member, and a second substrate including a bump and an interconnect. The second substrate is a low-temperature sintered ceramic substrate containing alkali metal ions. The first pad is connected to the interconnect via the bump. The first pad has at least a portion overlapping the semiconductor device in a plan view seen in a direction along a normal to the first surface. The semiconductor apparatus can thus be miniaturized.

A switching device has a substrate, a power semiconductor component arranged thereon, a connection device and a pressure device. The substrate has conductor tracks electrically insulated from each another. A power semiconductor component is arranged on one of the conductor tracks. The connection device is embodied as a film composite having an electrically conductive film and an electrically insulating film and forming a first and a second main surface. The switching device is connected in a circuit-conforming manner by the connection device, and a contact area of the first main surface of the power semiconductor component is connected to a first contact area of an assigned conductor track of the substrate in a force-locking and electrically conductive manner.

A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.

A semiconductor package and a method for making the same are provided. In the method, a clip is used to conduct a lead frame and at least one chip. The clip has at least one second connection segment, at least one third connection segment, and at least one intermediate connection segment. The second connection segment is electrically connected to a second conduction region of the chip and a second pin of the lead frame respectively, and the third connection segment is electrically connected to a third conduction region of the chip and a third pin of the lead frame respectively. The intermediate connection segment connects the at least one second connection segment and the at least one third connection segment, and is removed in a subsequent process. Thereby, the present invention does not need to use any gold wire, which effectively saves the material cost and the processing time.

A semiconductor device is provided with a semiconductor element having a plurality of electrodes, a plurality of terminals electrically connected to the plurality of electrodes, and a sealing resin covering the semiconductor element. The sealing resin covers the plurality of terminals such that a bottom surface of the semiconductor element in a thickness direction is exposed. A first terminal, which is one of the plurality of terminals, is disposed in a position that overlaps a first electrode, which is one of the plurality of electrodes, when viewed in the thickness direction. The semiconductor device is provided with a conductive connection member that contacts both the first terminal and the first electrode.

The present disclosure relates to an electrode connection element, a light emitting apparatus including the same, and a method for manufacturing the light emitting apparatus, and more particularly, to an electrode connection element, a light emitting apparatus including the same, and a method for manufacturing the light emitting apparatus, which are for electrically connecting an electrode terminal and an external drive circuit. An electrode connection element according to an exemplary embodiment includes: an upper connection member coming into contact with an upper surface of an electrode terminal formed on a substrate; a lower connection member configured to support a lower surface of the substrate; a connection member configured to connect the upper connection member and the lower connection member to each other.

Various aspects of the disclosure are directed to circuitry coupled for controlling current flow, such as in a cascode arrangement. As may be consistent with one or more embodiments, an apparatus includes a first transistor having a gate, source, channel and drain, and a second transistor having a gate, and having a stacked source, channel and drain. A conductive clip plate electrically connects the drain of the second transistor to the source of the first transistor, and another conductor electrically connects the source of the second transistor to the gate of the first transistor. The second transistor operates with the connecting structure to provide power by controlling the first transistor in an off-state and in an on-state.