A display backplane is provided, including a base, wherein pixel circuits, bonding electrodes, and bonding connection wires are on the base; the bonding electrodes are coupled to the bonding connection wires in a one-to-one correspondence; the bonding electrodes and the bonding connection wires are on two opposite surfaces of the base; the pixel circuits and the bonding connection wires are on a same side of the base; one end of each bonding connection wire is coupled to the bonding electrode through the first via in the base; the other end of each of at least some bonding connection wires is coupled to the pixel circuit; and an orthographic projection of at least one of the bonding electrodes and the bonding connection wires on the base is not coincident with an orthographic projection of the pixel circuit on the base.

Described herein are hybrid IC assemblies that include multiple stacked layers of electronic and/or photonic circuit elements. For example, a first layer of the IC assembly includes a waveguide formed of a substantially monocrystalline material, and a second layer of the IC assembly includes at least one electronic circuit element. A bonding material between a front face of the first layer and a back face of the second layer attaches the first layer to the second layer. The bonding material has a lower crystallinity than the waveguide.

A moat trench laterally surrounding a device region is formed in a substrate. A conductive metallic substrate enclosure structure is formed in the moat trench. Deep trenches are formed in the substrate, and a trench capacitor structure is formed in the deep trenches. The substrate may be thinned by removing a backside portion of the substrate. A backside surface of the conductive metallic substrate enclosure structure is physically exposed. A backside metal layer is formed on a backside surface of the substrate and a backside surface of the conductive metallic substrate enclosure structure. A metallic interconnect enclosure structure and a metallic cap plate may be formed to provide a metallic shield structure configured to block electromagnetic radiation from impinging into the trench capacitor structure.

A method of forming a semiconductor package includes attaching a first package component to a first carrier; attaching a second package component to the first carrier, the second package component laterally displaced from the first package component; attaching a third package component to the first package component, the third package component being electrically connected to the first package component; removing the first carrier from the first package component and the second package component; after removing the first carrier, performing a first circuit probe test on the second package component to obtain first test data of the second package component; and comparing the first test data of the second package component with prior data of the second package component.

A semiconductor device includes: a thick copper member in which a semiconductor chip is mounted; a printed circuit board that is disposed on a front surface of the thick copper member and provided with an opening exposing a part of the front surface of the thick copper member, a wiring pattern, and conductive vias connecting the pattern and the thick copper member; a semiconductor chip mounted on the front surface of the thick copper member exposed through the opening and connected to the pattern by a metal wire; an electronic component mounted on a front surface of the printed circuit board opposite to a side facing the thick copper member and connected to the pattern; and a cap or an epoxy resin sealing the front surface of the printed circuit board opposite to a side facing the thick copper member, the chip, the component, and the metal wire.

Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a die having a first surface and an opposing second surface; a capacitor having a surface, wherein the surface of the capacitor is coupled to the first surface of the die; and a conductive pillar coupled to the first surface of the die. In some embodiments, a microelectronic assembly may include a capacitor in a first dielectric layer; a conductive pillar in the first dielectric layer; a first die having a surface in the first dielectric layer; and a second die having a surface in a second dielectric layer, wherein the second dielectric layer is on the first dielectric layer, and wherein the surface of the second die is coupled to the capacitor, to the surface of the first die, and to the conductive pillar.

Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a die having a first surface and an opposing second surface; a capacitor having a surface, wherein the surface of the capacitor is coupled to the first surface of the die; and a conductive pillar coupled to the first surface of the die. In some embodiments, a microelectronic assembly may include a capacitor in a first dielectric layer; a conductive pillar in the first dielectric layer; a first die having a surface in the first dielectric layer; and a second die having a surface in a second dielectric layer, wherein the second dielectric layer is on the first dielectric layer, and wherein the surface of the second die is coupled to the capacitor, to the surface of the first die, and to the conductive pillar.

A color display device includes a matrix of light sources, each light source comprising a single micro-light-emitting diode, the light sources being of three different colors, each color pixel of the matrix comprising three sources emitting in the three different colors. In the device, the matrix is formed by a group of elementary components of identical shape, each elementary component comprising at least two light-emitting diodes emitting in one of the three spectral bands—the shape of the light-emitting diodes being either a triangle, or a quadrilateral, or a pentagon—the elementary components being assembled in threes such that their respective diodes touch one another by one of their sides, the group formed by the three sources associated with the three diodes forming a color pixel.

A display device includes a substrate including a display area in which pixels are located, and a non-display area, first and second electrodes in the display area and spaced from each other, light emitting elements between the first and second electrodes, connection electrodes electrically connected to the light emitting elements, a fan-out line electrically connected to the pixels in the non-display area, a first pad electrode on the fan-out line, a pad connection electrode on the fan-out line and the first pad electrode, and electrically connecting the fan-out line and the first pad electrode, and a second pad electrode at a same layer as at least one of the connection electrodes, and contacting the first pad electrode.

A semiconductor package including a core substrate, a semiconductor chip in the core substrate and having chip pads, a redistribution wiring layer covering a lower surface of the core substrate and including redistribution wirings electrically connected to the chip pads and a pair of capacitor pads exposed from an outer surface of the redistribution wiring layer, conductive pastes on the capacitor pads, respectively, and a capacitor via the conductive pastes and having first and second outer electrodes on the capacitor pads, respectively, may be provided. Each of the capacitor pads includes a pad pattern exposed from the outer surface of the redistribution wiring layer, and at least one via pattern at a lower portion of the pad pattern and electrically connected to at least one of the redistribution wirings. The via pattern is eccentric by a distance from a center line of the pad pattern.