A light detector includes a substrate, a membrane disposed on a surface of the substrate, a first and a second electrode post supporting the membrane. The first electrode post includes a first main body portion having a tubular shape spreading from a first electrode pad toward a side opposite to the substrate, and a first flange portion provided in an end portion at the side opposite to the substrate in the first main body portion. The first flange portion is provided with a first sloped surface inclined so as to approach the substrate as it goes away from the first main body portion. A first wiring layer reaches an inner surface of the first main body portion through the first sloped surface. The second electrode post and the second wiring layer are formed similarly to the first electrode post and the first wiring layer.

An electromagnetic radiation detection device comprises a matrix having a plurality of N rows divided into a plurality of M columns of cells, each cell comprising a plurality of diode segments responsive to electromagnetic radiation incident on said device. A scan driver provides a plurality of N scan line signals to respective rows of said matrix, each for enabling charge values from cells of a selected row of said matrix to be read. A reader reads a plurality of M variable charge value signals from respective columns of said matrix, each corresponding to a cell within a selected row of said matrix. Each diode segment is connected to a drive voltage sufficient to operate each diode segment in avalanche multiplication Geiger mode; and connected in series with an avalanche quenching resistor to said reader.

A method of generating electricity from light that utilizes an array of photovoltaic cells, each including a junction between an electron-donating layer, and an electron-accepting layer, and wherein each cell produces a maximum current during exposure to light when it is exposed to a magnetic field having an optimal strength, and wherein the optimal magnetic field strength varies by more than 5% between the photovoltaic cells. For each the cell, a magnetic field is created in an optimal range of magnetic field strength, that is substantially unvarying over the electron donating layer, as the array is being exposed to light.

A light detector includes: a substrate; and a membrane which is supported on a surface of the substrate so that a space is formed between the surface of the substrate and the membrane, in which the membrane includes a first wiring layer and a second wiring layer which are opposite each other with a gap extending along a line having a curved portion interposed therebetween and a resistance layer which is electrically connected to each of the first wiring layer and the second wiring layer and has an electric resistance depending on a temperature, and in which a first edge portion at the side of the line in the first wiring layer and a second edge portion at the side of the line in the second wiring layer respectively continuously extend.

A light detector includes: a substrate; and a membrane, in which the membrane includes a first wiring layer and a second wiring layer which are opposite each other with a gap extending along a line interposed therebetween, a resistance layer which is electrically connected to each of the first wiring layer and the second wiring layer and has an electric resistance depending on a temperature, a light absorption layer, and a separation layer which is disposed between each of the first wiring layer and the second wiring layer and the light absorption layer, and in which the light absorption layer includes a first region which spreads to the side opposite to the second wiring layer with respect to the first wiring layer and a second region which spreads to the side opposite to the first wiring layer with respect to the second wiring layer.

Provided is a solar cell comprising a first electrode; a second electrode; a perovskite photoabsorber layer located between the first electrode and the second electrode; a first semiconductor layer located between the first electrode and the photoabsorber layer; and a second semiconductor layer located between the second electrode and the photoabsorber layer. At least one electrode selected from the group consisting of the first electrode and the second electrode is light-transmissive. The first semiconductor layer contains Li. The second semiconductor layer contains LiN(SO.sub.2CF.sub.3).sub.2. The second semiconductor layer contains poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]. In the second semiconductor layer, a molar ratio of LiN(SO.sub.2CF.sub.3).sub.2 to poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] is not less than 0.15 and not more than 0.26.

A semiconductor body of a first type of conductivity is formed including a base layer, a first further layer on the base layer and a second further layer on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. A doped region of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench with doped polysilicon.

A semiconductor body of a first type of conductivity is formed including a base layer, a first further layer on the base layer and a second further layer on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. A doped region of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench with doped polysilicon.

The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn.sub.2N.sub.2 or the chemical formula X.sup.1.sub.2ZnN.sub.2 wherein X.sup.1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

An image sensor includes a substrate including a photoelectric conversion part therein, and a fixed charge layer provided above the substrate. The fixed charge layer includes a first metal oxide and a second metal oxide, which are different from each other. The first metal oxide includes a first metal, and the second metal oxide includes a second metal different from the first metal. Concentration of the first metal in the fixed charge layer progressively increases from an upper portion of the fixed charge layer to a lower portion of the fixed charge layer.