An image sensor includes a substrate including a photoelectric conversion part therein, and a fixed charge layer provided above the substrate. The fixed charge layer includes a first metal oxide and a second metal oxide, which are different from each other. The first metal oxide includes a first metal, and the second metal oxide includes a second metal different from the first metal. Concentration of the first metal in the fixed charge layer progressively increases from an upper portion of the fixed charge layer to a lower portion of the fixed charge layer.

An image sensor includes a substrate including a photoelectric conversion part therein, and a fixed charge layer provided above the substrate. The fixed charge layer includes a first metal oxide and a second metal oxide, which are different from each other. The first metal oxide includes a first metal, and the second metal oxide includes a second metal different from the first metal. Concentration of the first metal in the fixed charge layer progressively increases from an upper portion of the fixed charge layer to a lower portion of the fixed charge layer.

Recording photons incident on an image sensor; and storing the recorded photons on the image sensor in varying densities, wherein the photons are recorded in varying densities by storing electrons non-linearly. Key words include a sensor and storing non-linearly.

Recording photons incident on an image sensor; and storing the recorded photons on the image sensor in varying densities, wherein the photons are recorded in varying densities by storing electrons non-linearly. Key words include a sensor and storing non-linearly.

An SOI substrate includes a base substrate, a polycrystalline silicon layer formed on the base substrate, an insulating layer formed on the polycrystalline silicon layer, and a semiconductor layer formed on the insulating layer, and optical waveguides are formed in the semiconductor layer of the SOI substrate. Thus, by arranging the polycrystalline silicon layer under the insulating layer, the insulating layer can be made thin. Since the polycrystalline silicon layer includes a plurality of grains (a mass of grains made of a single crystal Si), even when leakage of light is generated beyond the insulating layer, reflection (diffusion) of light can be suppressed. In addition, by arranging the polycrystalline silicon layer under the insulating layer, the insulating layer can be made thin, so that distortion of a substrate can be suppressed.

An SOI substrate includes a base substrate, a polycrystalline silicon layer formed on the base substrate, an insulating layer formed on the polycrystalline silicon layer, and a semiconductor layer formed on the insulating layer, and optical waveguides are formed in the semiconductor layer of the SOI substrate. Thus, by arranging the polycrystalline silicon layer under the insulating layer, the insulating layer can be made thin. Since the polycrystalline silicon layer includes a plurality of grains (a mass of grains made of a single crystal Si), even when leakage of light is generated beyond the insulating layer, reflection (diffusion) of light can be suppressed. In addition, by arranging the polycrystalline silicon layer under the insulating layer, the insulating layer can be made thin, so that distortion of a substrate can be suppressed.

A photoelectric converter includes a support face, and a photoelectric conversion film. The photoelectric conversion film is disposed at the support face. In a first cross-section parallel to a perpendicular direction that is perpendicular to the support face, the photoelectric conversion film has a first sloped face. In the first cross-section, the inclination angle of the first sloped face relative to a first parallel direction, which is parallel to the support face, is defined as a first slope angle. The first slope angle is greater than 0 and less than or equal to 5.

A sensor capable of detecting light, hydrogen gas, and air pressure includes a metal oxide film produced by a process including the steps of: (a) forming an organic film by using a primer composition containing (i) an addition polymerizable compound including three or more reactive groups, (ii) an addition polymerizable compound including an acid group, and (iii) an addition polymerizable compound including a hydrophilic functional group; (b) forming a metal (M1) salt from the acid group; (c) substituting the metal (M1) salt of the acid group with a metal (M2) salt by treating the organic film with a metal (M2) ion aqueous solution; (d) reducing the metal (M2) ion so that a metal film is formed on a surface of the organic film; and (e) oxidizing the metal film.