An optoelectronic device including at least an emissive component including at least a first electrode, a second electrode, and an emissive element disposed between an emissive face of the optoelectronic device and the second electrode, a photodetector component such that the second electrode of the emissive component is disposed between the photodetector component and the emissive element. The emissive component and the photodetector component are superimposed one above the other, and the second electrode has at least one hole passing through it, disposed vertically in line with at least a part of a detection surface of the photodetector component and/or a part of the detection surface of the photodetector component is not disposed vertically in line with the second electrode and form a ring located at the external edges of the detection surface of the photodetector component.

A semiconductor package includes a PDA chip, a MOS chip, and a wiring plate including a first principal surface and a second principal surface, the first principal surface being provided with a first rigid plate that is non-conductive and a second rigid plate that is conductive, the PDA chip being fixed to the first rigid plate by using a non-conductive bonding agent, a lower surface terminal of the MOS chip being soldered to the second rigid plate, the second principal surface being provided with an input terminal and an output terminal, the input terminal being electrically connected to the PDA chip, the output terminal being electrically connected to the second rigid plate.

A semiconductor package includes a PDA chip, a MOS chip, and a wiring plate including a first principal surface and a second principal surface, the first principal surface being provided with a first rigid plate that is non-conductive and a second rigid plate that is conductive, the PDA chip being fixed to the first rigid plate by using a non-conductive bonding agent, a lower surface terminal of the MOS chip being soldered to the second rigid plate, the second principal surface being provided with an input terminal and an output terminal, the input terminal being electrically connected to the PDA chip, the output terminal being electrically connected to the second rigid plate.

A photodiode includes: a semiconductor layer; a first conductive layer on the semiconductor layer and including a transparent conductive oxide; and a second conductive layer arranged between the semiconductor layer and the first conductive layer, having a work function different from a work function of the first conductive layer, and forming a Schottky junction structure with the semiconductor layer. The work function of the second conductive layer is set to lower the Schottky-barrier height, so that light in a wide wavelength band may be sensed.

A semiconductor device has an interposer. A first semiconductor die with a photonic portion is disposed over the interposer. The photonic portion extends outside a footprint of the interposer. The interposer and first semiconductor die are disposed over a substrate. An encapsulant is deposited between the interposer and substrate. The photonic portion remains exposed from the encapsulant.

A semiconductor device has an interposer. A first semiconductor die with a photonic portion is disposed over the interposer. The photonic portion extends outside a footprint of the interposer. The interposer and first semiconductor die are disposed over a substrate. An encapsulant is deposited between the interposer and substrate. The photonic portion remains exposed from the encapsulant.

The present application discloses a semiconductor apparatus, a pixel circuit and a control method thereof. The semiconductor apparatus comprises: an active layer; a first insulating layer; a first gate and a second gate overlapping with a portion of the active layer with the first insulating layer interposed therebetween, respectively; a first electrode, a second electrode and a third electrode, the first electrode and the second electrode are electrically connected with a first portion and a second portion of the active layer, respectively, the third electrode is used to be electrically connected with a photosensitive device, wherein the third electrode is electrically connected with the first gate or the second gate; or the third electrode is electrically connected with a third portion of the active layer.

The present application discloses a semiconductor apparatus, a pixel circuit and a control method thereof. The semiconductor apparatus comprises: an active layer; a first insulating layer; a first gate and a second gate overlapping with a portion of the active layer with the first insulating layer interposed therebetween, respectively; a first electrode, a second electrode and a third electrode, the first electrode and the second electrode are electrically connected with a first portion and a second portion of the active layer, respectively, the third electrode is used to be electrically connected with a photosensitive device, wherein the third electrode is electrically connected with the first gate or the second gate; or the third electrode is electrically connected with a third portion of the active layer.

A display device includes a thin-film transistor layer disposed on a substrate and including thin-film transistors; and an emission material layer disposed on the thin-film transistor layer. The emission material layer includes light-emitting elements each including a first light-emitting electrode, an emissive layer and a second light-emitting electrode, light-receiving elements each including a first light-receiving electrode, a light-receiving semiconductor layer and a second light-receiving electrode, and a first bank disposed on the first light-emitting electrode and defining an emission area of each of the light-emitting elements. The light-receiving elements are disposed on the first bank.

A display device includes a thin-film transistor layer disposed on a substrate and including thin-film transistors; and an emission material layer disposed on the thin-film transistor layer. The emission material layer includes light-emitting elements each including a first light-emitting electrode, an emissive layer and a second light-emitting electrode, light-receiving elements each including a first light-receiving electrode, a light-receiving semiconductor layer and a second light-receiving electrode, and a first bank disposed on the first light-emitting electrode and defining an emission area of each of the light-emitting elements. The light-receiving elements are disposed on the first bank.