A method for growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga,Al,In,B)N template or nucleation layer on the substrate, and growing the semipolar (Ga,Al,In,B)N thin films, heterostructures or devices on the planar semipolar (Ga,Al,In,B)N template or nucleation layer. The method results in a large area of the semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices being parallel to the substrate surface.

Methods of manufacture of advanced electronic and photonic structures including heterojunction transistors, transistor lasers and solar cells and their related structures, are described herein. Other embodiments are also disclosed herein.

The methods of manufacture of GeSiSn heterojunction bipolar transistors, which include light emitting transistors and transistor lasers and photo-transistors and their related structures are described herein. Other embodiments are also disclosed herein.

A semiconductor device includes a first three-terminal light emitting element, a second three-terminal light emitting element that is disposed at a prescribed distance away from the first three-terminal light emitting element in a first direction, a first current supply electrode that corresponds to the first three-terminal light emitting element, a second current supply electrode that corresponds to the second three-terminal light emitting element, a first control electrode that corresponds to the first three-terminal light emitting element, a second control electrode that corresponds to the second three-terminal light emitting element, and a current extraction electrode that corresponds to the first three-terminal light emitting element and the second three-terminal light emitting element, wherein the first control electrode and the second control electrode are disposed at an inter-region that is determined between the first three-terminal light emitting element and the second three-terminal light emitting element.

A transfer device for transferring a plurality of micro LED dies is provided. The transfer device includes a carrier plate, a plurality of deformable components, and a plurality of transfer heads. The plurality of deformable components are disposed on the carrier plate. The plurality of transfer heads are respectively disposed on the plurality of deformable components. Each of the transfer heads includes a plurality of micro protrusions arranged in an array on a side away from the corresponding one deformable component. Deformation of the deformable components leads to deformation of the transfer heads, such that a number of the micro protrusions in contact with the micro LED dies is decreased. Accordingly, the transfer device can easily release the micro LED dies.

In one aspect, there is provided an apparatus including a light emitting diode. The apparatus may include a plurality of layers including a substrate layer, a buffer layer disposed on the substrate layer, a charge transport layer, a light emission layer, another charge transport layer, and/or a metamaterial layer. The other charge transport layer may have at least one channel etched into the other charge transport layer leaving a residual thickness of the other charge transport layer between a bottom of the etched channel and the light emission layer. A metamaterial layer may be contained in the at least one channel that is proximate to the residual thickness of the charge transport layer. The metamaterial may include a structure including at least one of a dielectric or a metal. The metamaterial may cause the light emitting diode to operate at higher frequencies and with higher efficiency.

Disclosed are an adhesive transparent electrode and a method of fabricating the same. More particularly, an adhesive transparent electrode according to an embodiment of the present disclosure includes a substrate and an adhesive silicone-based polymer matrix, in which a metal nanowire network is embedded, deposited on the substrate, wherein the adhesive silicone-based polymer matrix includes a silicone-based polymer including a silicone-based polymer base and a silicone-based polymer crosslinker; and a non-ionic surfactant.

A semiconductor device includes a first three-terminal light emitting element, a second three-terminal light emitting element that is disposed at a prescribed distance away from the first three-terminal light emitting element in a first direction, a first current supply electrode that corresponds to the first three-terminal light emitting element, a second current supply electrode that corresponds to the second three-terminal light emitting element, a first control electrode that corresponds to the first three-terminal light emitting element, a second control electrode that corresponds to the second three-terminal light emitting element, and a current extraction electrode that corresponds to the first three-terminal light emitting element and the second three-terminal light emitting element, wherein the first control electrode and the second control electrode are disposed at an inter-region that is determined between the first three-terminal light emitting element and the second three-terminal light emitting element.

Wafer bonded GaN monolithic integrated circuits and methods of manufacture of wafer bonded GaN monolithic integrated circuits and their related structures for electronic and photonic integrated circuits and for multi-functional integrated circuits, are described herein. Other embodiments are also disclosed herein.

In an embodiment an optoelectronic arrangement includes an optoelectronic component having a layer stack including an active area arranged between a layer of a first conductive type and a layer of a second conductive type, a substrate configured to generate an alternating electrical field at a surface of the substrate, the alternating electrical field having opposing field components and at least one first excitation element arranged on or within the substrate, wherein the optoelectronic component is arranged on the substrate such that the opposing field components of the alternating electrical field are substantially perpendicular to respective layers of the layer stack.