An optoelectronic component and a method for the producing an optoelectronic component are disclosed. In an embodiment, the component comprises an active zone for generating electromagnetic radiation, wherein the active zone adjoins at least one layer arrangement of a semiconductor material, wherein the layer arrangement comprises at least two layers, wherein the two layers are formed in such a way that at an interface between the two layers a piezoelectric field is provided, the piezoelectric field configured to provide an electrical voltage drop at the interface, wherein a peak doping region is provided at the interface of the two layers in order to reduce the electrical voltage drop, wherein, in the direction away from the active zone, a doping of the peak doping region increases at least by a first percentage value and then decreases by at least a second percentage value, and wherein the first percentage value and the second percentage value are greater than 10% of a maximum doping of the peak doping region.

Contrary to conventional wisdom, which holds that light-emitting diodes (LEDs) should be cooled to increase efficiency, the LEDs disclosed herein are heated to increase efficiency. Heating an LED operating at low forward bias voltage (e.g., V<k.sub.BT/q) can be accomplished by injecting phonons generated by non-radiative recombination back into the LED's semiconductor lattice. This raises the temperature of the LED's active rejection, resulting in thermally assisted injection of holes and carriers into the LED's active region. This phonon recycling or thermo-electric pumping process can be promoted by heating the LED with an external source (e.g., exhaust gases or waste heat from other electrical components). It can also be achieved via internal heat generation, e.g., by thermally insulating the LED's diode structure to prevent (rather than promote) heat dissipation. In other words, trapping heat generated by the LED within the LED increases LED efficiency under certain bias conditions.

An emission efficiency of a light-emitting device is improved by reducing strains applied to a light-emitting layer. On a sapphire substrate, an n-type contact layer, an nESD layer, an n-type cladding layer, a light-emitting layer, a p-type cladding layer, and a p-type contact layer, are sequentially deposited. The light-emitting layer has a MQW structure in which a layer unit of a well layer, a capping layer, and a barrier layer sequentially deposited is repeatedly deposited. Of the well layers, the In composition ratio of only first well layer is reduced than the In composition ratios of other well layers, and the In composition ratios of the other well layers are equal to each other. The In composition ratio of the first well layer is designed so that the emission wavelength of the first well layer is equal to the emission wavelengths of other well layers.

An emission efficiency of a light-emitting device is improved by reducing strains applied to a light-emitting layer. On a sapphire substrate, an n-type contact layer, an nESD layer, an n-type cladding layer, a light-emitting layer, a p-type cladding layer, and a p-type contact layer, are sequentially deposited. The light-emitting layer has a MQW structure in which a layer unit of a well layer, a capping layer, and a barrier layer sequentially deposited is repeatedly deposited. Of the well layers, the In composition ratio of only first well layer is reduced than the In composition ratios of other well layers, and the In composition ratios of the other well layers are equal to each other. The In composition ratio of the first well layer is designed so that the emission wavelength of the first well layer is equal to the emission wavelengths of other well layers.

A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

A semiconductor nanowire device includes at least one semiconductor nanowire having a bottom surface and a top surface, an insulating material which surrounds the semiconductor nanowire, and an electrode ohmically contacting the top surface of the semiconductor nanowire. A contact of the electrode to the semiconductor material of the semiconductor nanowire is dominated by the contact to the top surface of the semiconductor nanowire.

A semiconductor light-emitting element includes a substrate and a semiconductor stack portion provided on the substrate and having at least a first-conductivity-type semiconductor layer, a light-emitting layer, and a second-conductivity-type semiconductor layer. The substrate has a property to allow transmission of light from the light-emitting layer, and has a hexahedral shape including a first surface on which a semiconductor stack portion is provided, a second surface located opposite to the first surface, a pair of third surfaces orthogonal to the first surface and the second surface, and a pair of fourth surfaces orthogonal to the first surface and the second surface and different from the pair of third surfaces.

A semiconductor light-emitting element includes a substrate and a semiconductor stack portion provided on the substrate and having at least a first-conductivity-type semiconductor layer, a light-emitting layer, and a second-conductivity-type semiconductor layer. The substrate has a property to allow transmission of light from the light-emitting layer, and has a hexahedral shape including a first surface on which a semiconductor stack portion is provided, a second surface located opposite to the first surface, a pair of third surfaces orthogonal to the first surface and the second surface, and a pair of fourth surfaces orthogonal to the first surface and the second surface and different from the pair of third surfaces.

The present disclosure provides a method for manufacturing a light-emitting device, comprising: providing a first substrate; providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the light-emitting layer, wherein the semiconductor stack comprises a plurality of blocks of semiconductor stack separated from each other, and wherein the plurality of blocks of semiconductor stack comprise a first block of semiconductor stack and a second block of semiconductor stack; performing a separating step to separate the first block of semiconductor stack from the first substrate, and the second block of semiconductor stack remained on the first substrate; providing a permanent substrate comprising a first surface, a second surface, and a third block of semiconductor stack on the first surface; and bonding one of the first block of semiconductor stack and the second block of semiconductor stack to the second surface of the permanent substrate; wherein the third block of semiconductor stack is separated from the first substrate, and one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate and the third block of the semiconductor stack comprise different optical characteristic value or an electrical characteristic value.

The present disclosure provides a method for manufacturing a light-emitting device, comprising: providing a first substrate; providing a semiconductor stack on the first substrate, the semiconductor stack comprising a first conductive type semiconductor layer, a light-emitting layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the light-emitting layer, wherein the semiconductor stack comprises a plurality of blocks of semiconductor stack separated from each other, and wherein the plurality of blocks of semiconductor stack comprise a first block of semiconductor stack and a second block of semiconductor stack; performing a separating step to separate the first block of semiconductor stack from the first substrate, and the second block of semiconductor stack remained on the first substrate; providing a permanent substrate comprising a first surface, a second surface, and a third block of semiconductor stack on the first surface; and bonding one of the first block of semiconductor stack and the second block of semiconductor stack to the second surface of the permanent substrate; wherein the third block of semiconductor stack is separated from the first substrate, and one of the first block of semiconductor stack and the second block of semiconductor stack which is bonded to the permanent substrate and the third block of the semiconductor stack comprise different optical characteristic value or an electrical characteristic value.