An inventive light-emitting apparatus comprises an array of multiple light-emitting pixels, and one or more transmissive optical elements positioned at a light-emitting surface of the light-emitting pixel array. One or more of the light-emitting pixels is defective. Each optical element is positioned at a location of a corresponding defective light-emitting pixel, and extends over that defective pixel and laterally at least partly over one or more adjacent pixels. Each optical element transmits laterally at least a portion of light emitted by the adjacent pixels to propagate away from the array from the location of the defective pixel, reducing the appearance of the defective pixel.

A GaN based LED, with an active region of the LED containing one or more quantum wells (QWs), with the QWs separated by higher energy barriers, with the barriers doped, may be part of an optical communications system.

Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a device includes a first component having a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. A plurality of mesa shapes are formed within the n-side semiconductor layer, the active light emitting layer, and the p-side semiconductor layer. The semiconductor layer stack comprises a III-V semiconductor material. The device also includes a second component having a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component, first contacts of the first component are aligned with and bonded to second contacts of the second component, and a run-out between the first contacts and the second contacts is less than 200 nm.

A method of manufacturing a nitride semiconductor light emitting element includes: growing an n-side nitride semiconductor layer; growing an active layer on the n-side nitride semiconductor layer; and growing a p-side nitride semiconductor layer on the active layer, which includes: growing a first p-side nitride semiconductor layer, growing a second p-side nitride semiconductor layer, growing a third p-side nitride semiconductor layer, and growing a fourth p-side nitride semiconductor layer, while varying flow rates of an Al source gas, a Ga source gas, an N source gas, and a Mg source gas.

Apparatus and methods may be implemented to provide multi-layer display assembly apparatus for information handling systems, including portable information handling systems (e.g., such as smart phones, tablet computers, notebook computers, etc.) as well as display assembly apparatus for other types of information handling systems such as desktop computers, servers, etc. The disclosed multi-layer display assembly apparatus may be implemented to include multiple adhesive layers (e.g., two or more adhesive layers) that have different indices of refraction and/or different debonding characteristics, and that are disposed between a display substrate and an transparent protective hardcover such as glass-based or plastic-based cover.

Apparatus and methods may be implemented to provide multi-layer display assembly apparatus for information handling systems, including portable information handling systems (e.g., such as smart phones, tablet computers, notebook computers, etc.) as well as display assembly apparatus for other types of information handling systems such as desktop computers, servers, etc. The disclosed multi-layer display assembly apparatus may be implemented to include multiple adhesive layers (e.g., two or more adhesive layers) that have different indices of refraction and/or different debonding characteristics, and that are disposed between a display substrate and an transparent protective hardcover such as glass-based or plastic-based cover.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

The present invention relates to a color tunable and/or color temperature tunable LED filament (20, 22, 24), said LED filament comprising an elongated carrier (220), said elongated carrier comprising a first major surface (222) and a second major surface (224) arranged opposite to said first major surface, a plurality of LEDs (210) arranged in at least one linear array on said first surface of said elongated carrier, wherein the plurality of LEDs includes LEDs of different colors and/or different color temperatures, a first elongated transparent or substantially transparent layer (230) covering the plurality of LEDs on the first major surface and also at least partly covering said first major surface, and a first elongated light scattering layer (240), arranged to at least partially cover said first transparent or substantially transparent layer.

An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor body including a first region, an active region configured to generate electromagnetic radiation, a starting region, a plurality of funnel-shaped openings and a second region, wherein the starting region is arranged between the first region and the active region, wherein the active region is arranged between the starting region and the second region, wherein the funnel-shaped openings extend from the starting region through the active region as far as the second region, wherein the semiconductor body is based on a nitride compound semiconductor material, wherein the first region comprises n-doping, wherein the second region comprises p-doping, wherein the funnel-shaped openings are filled with a material of the second region, and wherein the funnel-shaped openings have a pre-determinable density, the density of the funnel-shaped openings being decoupled from a density of dislocations inside the first region.

The embodiment of the present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate. The semiconductor structure also includes a first buffer layer disposed on the substrate. The semiconductor structure further includes a second buffer layer disposed on the first buffer layer. The semiconductor structure includes a semiconductor-based layer disposed on the second buffer layer. The second buffer layer includes aluminum, and the aluminum content of the second buffer layer gradually increases in the direction away from the substrate.