A nitride semiconductor light-emitting element includes an active layer comprising at least one well layer, a p-type semiconductor layer located on one side of the active layer, and an electron blocking stack body located between the active layer and the p-type semiconductor layer. The electron blocking stack body includes a first electron blocking layer and a second electron blocking layer that is located on the p-type semiconductor layer side relative to the first electron blocking layer and has a lower Al composition ratio than that of the first electron blocking layer. When a total number of the well layers in the active layer is N, a film thickness of the first electron blocking layer is a film thickness d [nm] and an Al composition ratio of the second electron blocking layer is an Al composition ratio x [%], relationships 0.1N+0.9≤d≤0.2N+2.0 and 10N+40≤x≤10N+60 are satisfied.

A method for manufacturing a light-emitting element includes forming a first light-emitting part, forming a tunnel junction part on the first light-emitting part, and forming a second light-emitting part on the tunnel junction part. The step of forming the first light-emitting part includes forming a first layer with a first p-type impurity concentration at a first temperature, and forming a second layer with a second p-type impurity concentration on the first layer. The second p-type impurity concentration is greater than the first p-type impurity concentration. The step of forming the second light-emitting part includes forming a third layer with a third p-type impurity concentration at a second temperature and forming a fourth layer with a fourth p-type impurity concentration on the third layer. The fourth p-type impurity concentration is greater than the third p-type impurity concentration. The second temperature is less than the first temperature.

An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. Another object is to provide semiconductor device with low power consumption or a manufacturing method thereof. A light-transmitting conductive layer which functions as a gate electrode, a gate insulating film formed over the light-transmitting conductive layer, a semiconductor layer formed over the light-transmitting conductive layer which functions as the gate electrode with the gate insulating film interposed therebetween, and a light-transmitting conductive layer which is electrically connected to the semiconductor layer and functions as source and drain electrodes are included.

A method of fabricating a gain medium includes growing a p-type layer doped with zinc on a substrate, growing an undoped layer including one or both of InP or InGaAsP on the p-type layer, growing a region that includes multiple quantum wells (MQWs) on the undoped layer, and growing an n-type layer on the region. The undoped layer has a thickness that is sufficient to prevent Zn diffusion from the p-type layer into the region during subsequent growth or wafer fabrication steps.

A light-emitting diode is provided, including: a first layer of n-doped Al.sub.X1Ga.sub.(1-X1-Y1)In.sub.Y1N, with X1>0 and X1+Y1≤1; a second layer of p-doped Al.sub.X2Ga.sub.(1-X2-Y2)In.sub.Y2N, with X2>0 and X2+Y2≤1; an active area disposed between the first and the second layers and comprising at least one multi-quantum well emissive structure; nanowires based on AlN p-doped with indium and magnesium atoms, disposed on the second layer; and an ohmic contact layer in contact with the nanowires. A method for producing a light-emitting diode is also provided.

A template for growing Group III-nitride semiconductor layers, a Group III-nitride semiconductor light emitting device and methods of manufacturing the same are provided. The template for growing Group III-nitride semiconductor layers includes a growth substrate having a first plane, a second plane opposite to the first plane and a groove extending inwards the growth substrate from the first plane, an insert for heat dissipation placed and secured in the groove, and a nucleation layer formed on a partially removed portion of the first plane.

A template for growing Group III-nitride semiconductor layers, a Group III-nitride semiconductor light emitting device and methods of manufacturing the same are provided. The template for growing Group III-nitride semiconductor layers includes a growth substrate having a first plane, a second plane opposite to the first plane and a groove extending inwards the growth substrate from the first plane, an insert for heat dissipation placed and secured in the groove, and a nucleation layer formed on a partially removed portion of the first plane.

An image display device manufacturing method according to an embodiment includes preparing a semiconductor layer, bonding the semiconductor layer to a first surface of a light-transmitting substrate, etching the semiconductor layer to form, on the first surface, a light-emitting element including a light-emitting surface and an upper surface provided on a side opposite to the light-emitting surface, forming a first insulating film covering the first surface and the light-emitting element, forming a circuit element on the first insulating film, forming a second insulating film covering the first insulating film and the circuit element, forming a first via passing through the first insulating film and the second insulating film, and forming a first wiring layer on the second insulating film. The first via is located between and electrically connects the first wiring layer and the upper surface.

A light emitting diode device includes a substrate, a frame, an LED die and a transparent layer. The frame is located on the substrate. The frame and the substrate collectively define a concave portion. The frame has a light reflectivity ranging from 20% to 40%. The LED die is located on the substrate and within the concave portion. The transparent layer is filled into the concave portion and covering the LED die, wherein the LED die has a side-emitting surface and a top-emitting surface, the side-emitting surface has a luminous intensity greater than that of the top-emitting surface.

A micro light-emitting device has an epitaxial die having a top surface, a bottom surface and a plurality of sidewalls connected between the top surface and the bottom surface. A roughness of at least one part of the surface of at least one of the sidewalls is smaller than or equal to 10 nm, or an etch-pit density of the at least one part of the surface is smaller than 10.sup.8/cm.sup.2, or a flatness tolerance of the at least one part of the surface is greater than 0.1 times a thickness of the epitaxial die. Therefore, the serious attenuation of the peak external quantum efficiency is prevented due to the sidewall damage effect after the light-emitting device is miniaturized.