The present disclosure falls into the field of optoelectronics, particularly, includes the design, epitaxial growth, fabrication, and characterization of Laser Diodes (LDs) operating in the ultraviolet (UV) to infrared (IR) spectral regime on patterned substrates (PSs) made with (formed on) low cost, large size Si, or GaN on sapphire, GaN, and other wafers. We disclose three types of PSs, which can be universal substrates, allowing any materials (III-Vs, II-VIs, etc.) grown on top of it with low defect and/or dislocation density.

A method for manufacturing a light-emitting element, includes: introducing a gas comprising gallium, an ammonia gas, and a gas comprising a p-type impurity to a reactor and forming a first p-type nitride semiconductor layer on a first light-emitting layer in a state in which the reactor has been heated to a first temperature; introducing an ammonia gas at a first flow rate and a nitrogen gas to the reactor in a state in which the reactor is held at the first temperature; and subsequently introducing a gas comprising gallium, an ammonia gas at a second flow rate, and a gas comprising an n-type impurity to the reactor, and forming a second n-type nitride semiconductor layer on the first p-type nitride semiconductor layer. The first flow rate is less than the second flow rate.

A micro light-emitting diode (LED) includes an n-type layer, a transitional unit, a light-emitting unit disposed on the transitional unit, and a p-type layer disposed on the light-emitting unit. The transitional unit includes a first transitional layer, a second transitional layer and a third transitional layer that are sequentially disposed on the n-type layer in such order. The n-type layer, the first transitional layer, the second transitional layer, the third transitional layer and the light-emitting unit respectively have a bandgap of Eg.sub.n, a bandgap of Eg.sub.1, a bandgap of Eg.sub.2, a bandgap of Eg.sub.3 and a bandgap of Eg.sub.a which satisfy a relationship of Eg.sub.n≥Eg.sub.1>Eg.sub.2>Eg.sub.3>Eg.sub.a.

A method of manufacturing a light emitting element includes: forming a first n-type semiconductor layer containing an n-type impurity; forming, on the first n-type semiconductor layer, a first superlattice layer, which is grown at a first growth temperature; forming, on the first superlattice layer, a first light emitting layer; forming, on the first light emitting layer, a first p-type semiconductor layer containing a p-type impurity; forming, on the first p-type semiconductor layer, a tunnel junction part; forming, on the tunnel junction part, a second n-type semiconductor layer containing an n-type impurity; forming, on the second n-type semiconductor layer, a second superlattice layer, which is grown at a second growth temperature lower than the first growth temperature; forming, on the second superlattice layer, a second light emitting layer; and forming, on the second light emitting layer, a second p-type semiconductor layer containing a p-type impurity.

A light-emitting element includes: a semiconductor structure including: an n-side semiconductor layer including an n-type nitride semiconductor layer; a p-side semiconductor layer including a p-type nitride semiconductor layer; and an active layer disposed between the n-side semiconductor layer and the p-side semiconductor, the active layer including a well layer made of a nitride semiconductor. The p-side semiconductor layer includes, in order from an active layer side, a first layer including Ga, Al, In, and N, a second layer containing Ga, Al, and N, and a third layer including Ga and N, the second layer being thinner than the first layer. A bandgap energy of the second layer is larger than a bandgap energy of the well layer. A p-type impurity concentration of the third layer is higher than a p-type impurity concentration of the first layer. A composition ratio of Al in the second layer is higher than a composition ratio of Al in the first layer.

A light-emitting diode (LED) module includes: a glass substrate; a signal wiring layer provided on the glass substrate and including a plurality of electrodes connected by a passive matrix circuit; and a plurality of LEDs connected to the plurality of electrodes and configured to emit light toward the glass substrate, wherein the signal wiring layer further includes a boundary region that divides the LED module into a plurality of unit regions.

A light emitting element may include: a light emitting element core including a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer; and a single crystal insulating layer around a side surface of the light emitting element core.

Disclosed herein are techniques for bonding LED components. According to certain embodiments, a first component including a semiconductor layer stack is hybrid bonded to a second component including a substrate that has a different thermal expansion coefficient than the semiconductor layer stack. The semiconductor layer stack includes an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The first component and the second component further include first contacts and second contacts, respectively. To hybrid bond the two components, the first contacts are aligned with the second contacts. Then dielectric bonding is performed to bond respective dielectric materials of both components. The dielectric bonding is followed by metal bonding of the contacts, using annealing. To compensate run-out between the first contacts and the second contacts, aspects of the present disclosure relate to changing a curvature of the first component and/or the second component during the annealing stage.

A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.

A nanowire LED, a display module including the nanowire LED, and a method for manufacturing the display module are provided. The method for manufacturing a display module includes forming a template layer including a magnetic layer on a silicon substrate, growing a plurality of nanowire LEDs on the template layer, separating the plurality of nanowire LEDs from the template layer by ultrasonic waves, forming a plurality of unit cells in a state in which the plurality of nanowire LEDs are aligned to have a specific directivity, forming a plurality of unit pixels by transferring the plurality of unit cells onto a unit substrate, arranging the plurality of unit pixels on a thin film transistor (TFT) substrate through a fluidic self-assembly, and bonding the plurality of unit pixels to be connected to an electrode of the TFT substrate.