A radiation-emitting semiconductor body having a semiconductor layer sequence includes an active region that generates radiation, an n-conducting region and a p-conducting region, wherein the active region is located between the n-conducting region and the p-conducting region, the p-conducting region includes a current expansion layer based on a phosphide compound semiconductor material, and the current expansion layer is doped with a first dopant incorporated at phosphorus lattice sites.

An optoelectronic device including a substrate with first and second opposite surfaces; and electrical insulation side elements extending from the first surface to the second surface and defining, within the substrate, first semi-conductive or conductive portions which are electrically insulated from each other. The optoelectronic device also includes, for each first portion a first conductive contact pad on the second surface in contact with the first portion and a set of light-emitting diodes resting on the first surface and electrically connected to the first portion. The optoelectronic device also includes a conductive, at least partially transparent electrode layer covering all the light-emitting diodes; an insulating, at least partially transparent encapsulation layer covering the electrode layer; and at least one second conductive contact pad electrically connected to the electrode layer.

An image display device manufacturing method according to an embodiment includes preparing a semiconductor layer, joining the semiconductor layer to a first substrate with a first metal layer interposed therebetween, bonding the semiconductor layer to a light-transmitting substrate, removing the first substrate, etching the semiconductor layer to form a light-emitting element including a light-emitting surface and an upper surface, etching the first metal layer to form a light-blocking electrode covering the upper surface, forming a first insulating film covering the light-emitting element and the light-blocking electrode, forming a circuit element on the first insulating film, forming a second insulating film covering the first insulating film and the circuit element, forming a first via passing through the first insulating film and the second insulating film, and forming a first wiring layer on the second insulating film.

A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped Al.sub.xGa.sub.1-xAs layers with 0.5<x≦1.

A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped Al.sub.xGa.sub.1-xAs layers with 0.5<x≦1.

A composite substrate including a substrate, a buffer layer, and a strain release layer. The buffer layer is disposed on the substrate is provided. The strain release layer is disposed on the buffer layer, wherein the buffer layer is between the substrate and the strain release layer. A material of the strain release layer includes Al.sub.1-xGa.sub.xN, where 0≤x<0.15. The strain release layer is doped with silicon to release a compressive strain due to the buffer layer. A concentration of silicon doped in the strain release layer is greater than 10.sup.19 cm.sup.−3. A defect density of the strain release layer is less than or equal to 5×10.sup.9/cm.sup.2. A light-emitting diode is also provided.

An apparatus for outputting directional light includes a light-emitting structure including a light-emitting layer that emits light, and an optical antenna layer disposed on the light-emitting structure, wherein the optical antenna layer includes a light feeder configured to resonate light output from the light-emitting layer and a light reflector configure to reflect light output from the light feeder to have directivity. The light feeder and the light reflector are formed on a surface of the optical antenna layer.

An apparatus for outputting directional light includes a light-emitting structure including a light-emitting layer that emits light, and an optical antenna layer disposed on the light-emitting structure, wherein the optical antenna layer includes a light feeder configured to resonate light output from the light-emitting layer and a light reflector configure to reflect light output from the light feeder to have directivity. The light feeder and the light reflector are formed on a surface of the optical antenna layer.

A radiation-emitting semiconductor component includes a semiconductor body having an active layer which emits electromagnetic radiation of a first wavelength λ.sub.1 in a main radiation direction, and having a luminescence conversion layer, which converts at least part of the emitted radiation into radiation of a second wavelength λ.sub.2, which is greater than the first wavelength λ.sub.1.

A light-emitting element includes, successively from a lower side to an upper side, a first n-side semiconductor layer, a first active layer, a first p-side semiconductor layer, a second n-side semiconductor layer, a second active layer, and a second p-side semiconductor layer, each made of a nitride semiconductor. The second n-side semiconductor layer contacts the first p-side semiconductor layer. The second n-side semiconductor layer includes, successively from a lower side to an upper side, a first layer including gallium, a second layer including aluminum and gallium, and a third layer including gallium and having a lower n-type impurity concentration than the first and second layers. A thickness of the first layer and a thickness of the second layer each is less than 50% of a thickness of the third layer.