A light emitting diode including a lead frame unit and a light source unit disposed on the lead frame unit, in which the lead frame unit includes a body portion having a first surface contacting the light source unit and a second surface opposite to the first surface, at least one solder hole recessed from the second surface of the body portion, a first conductive layer disposed on the first surface of the body portion and including a circular portion having a substantially circular shape and an elongated portion provided integrally with the circular portion and elongating in one direction from the circular portion, a second conductive layer disposed on the second surface of the body portion, and a connection portion disposed between the first conductive layer and the second conductive layer and penetrating through the body portion.

A light emitting diode including a lead frame unit and a light source unit disposed on the lead frame unit, in which the lead frame unit includes a body portion having a first surface contacting the light source unit and a second surface opposite to the first surface, at least one solder hole recessed from the second surface of the body portion, a first conductive layer disposed on the first surface of the body portion and including a circular portion having a substantially circular shape and an elongated portion provided integrally with the circular portion and elongating in one direction from the circular portion, a second conductive layer disposed on the second surface of the body portion, and a connection portion disposed between the first conductive layer and the second conductive layer and penetrating through the body portion.

The LED pixel includes a driver IC (20) and an LED chip (40); the LED chip (40) is stacked and mounted on a surface of the driver IC (20), and a wire (31) going from the cathode of the LED chip (40) is connected to the driver IC (20). The driver IC (20) is an unpackaged die. An insulation layer is disposed on the surface of the die, and a pad (30) disposed on the insulation layer is connected to a positive electrode. The LED chip (40) is mounted on the pad (30), and the anode of the LED chip (40) is electrically connected with the pad (40). This improves the light transmittance of the LED display product.

The LED pixel includes a driver IC (20) and an LED chip (40); the LED chip (40) is stacked and mounted on a surface of the driver IC (20), and a wire (31) going from the cathode of the LED chip (40) is connected to the driver IC (20). The driver IC (20) is an unpackaged die. An insulation layer is disposed on the surface of the die, and a pad (30) disposed on the insulation layer is connected to a positive electrode. The LED chip (40) is mounted on the pad (30), and the anode of the LED chip (40) is electrically connected with the pad (40). This improves the light transmittance of the LED display product.

A method of fabricating a multicolor light-emitting diode (LED) display includes forming a first LED layer on a first release layer comprising a first two-dimensional (2D) material disposed on a first substrate. The first LED layer is configured to emit light at a first wavelength. The method also includes transferring the first LED layer from the first release layer to a host substrate and forming a second LED layer on a second release layer comprising a second 2D material disposed on a second substrate. The second LED layer is configured to emit light at a second wavelength. The method also includes removing the second LED layer from the second release layer and disposing the second LED layer on the first LED layer.

A method of fabricating a multicolor light-emitting diode (LED) display includes forming a first LED layer on a first release layer comprising a first two-dimensional (2D) material disposed on a first substrate. The first LED layer is configured to emit light at a first wavelength. The method also includes transferring the first LED layer from the first release layer to a host substrate and forming a second LED layer on a second release layer comprising a second 2D material disposed on a second substrate. The second LED layer is configured to emit light at a second wavelength. The method also includes removing the second LED layer from the second release layer and disposing the second LED layer on the first LED layer.

A semiconductor device includes: a p type first semiconductor layer that contains acceptors as impurities; an n type second semiconductor layer that is provided on the first semiconductor layer and contains donors as impurities; and a p type first diffusion portion that includes a contact portion in contact with the first semiconductor layer, the contact portion containing acceptors whose concentration is higher than that in the first semiconductor layer.

Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

A light-emitting diode and a display device are provided. The light-emitting diode includes an epitaxial structure, and the epitaxial structure has a light-emitting surface and a rear surface opposite to the light-emitting surface. The light-emitting surface includes a peripheral region and a middle region surrounded by the peripheral region, the peripheral region is covered with an insulating layer, and the area of the middle region accounts for 60% to 99% of the area of the light-emitting surface. The width of the insulating layer on the light-emitting surface is between 5 ?m and 20 ?m, so that it is possible to ensure a sufficient light output rate of the light-emitting diode, and the thickness of the insulating layer may be properly increased as well to enhance the protection for the sidewall of the light-emitting diode and prevent IR current leakage from affecting the performance of the device.