Patent classifications
H01L33/36
Light emitting diode package
A light emitting diode package includes a light emitting diode chip, a light conversion layer covering the light emitting diode chip, a reflecting layer surrounding the light emitting diode chip. The light emitting chip has a light output top surface, a first electrode and a second electrode. The first electrode and the second electrode are opposite to the light output top surface. The light emitting diode package further includes a supporting layer made of metal material. The supporting layer is mounted on a bottom surface of the reflecting layer facing away from the light output top surface and surrounds the light emitting chip and the light conversion layer.
Light emitting diode package
A light emitting diode package includes a light emitting diode chip, a light conversion layer covering the light emitting diode chip, a reflecting layer surrounding the light emitting diode chip. The light emitting chip has a light output top surface, a first electrode and a second electrode. The first electrode and the second electrode are opposite to the light output top surface. The light emitting diode package further includes a supporting layer made of metal material. The supporting layer is mounted on a bottom surface of the reflecting layer facing away from the light output top surface and surrounds the light emitting chip and the light conversion layer.
DISPLAY ARRAY
A display array including a semiconductor stacked layer, an insulating layer, a plurality of electrode pads, and a driving backplane is provided. The semiconductor stacked layer has a plurality of light emitting regions. The insulating layer is disposed to an outer surface of the semiconductor stacked layer and contacts the semiconductor stacked layer. The insulating layer has a plurality of openings. The electrode pads are disposed to the insulating layer. The driving backplane is disposed to the semiconductor stacked layer. The electrode pads are respectively electrically connected to a portion of the semiconductor stacked layer and the driving backplane via the openings of the insulating layer to drive the light emitting regions. The electrode pads are located in the openings of the insulating layer and separated by the insulating layer, and the adjacent light emitting regions in the semiconductor stacked layer are not patterned.
DISPLAY ARRAY
A display array including a semiconductor stacked layer, an insulating layer, a plurality of electrode pads, and a driving backplane is provided. The semiconductor stacked layer has a plurality of light emitting regions. The insulating layer is disposed to an outer surface of the semiconductor stacked layer and contacts the semiconductor stacked layer. The insulating layer has a plurality of openings. The electrode pads are disposed to the insulating layer. The driving backplane is disposed to the semiconductor stacked layer. The electrode pads are respectively electrically connected to a portion of the semiconductor stacked layer and the driving backplane via the openings of the insulating layer to drive the light emitting regions. The electrode pads are located in the openings of the insulating layer and separated by the insulating layer, and the adjacent light emitting regions in the semiconductor stacked layer are not patterned.
SYSTEM FOR TRANSFERRING MICRO LED
The present invention provides a system for transferring a micro LED, the system transferring more efficiently a micro LED dropped in a solution.
SYSTEM FOR TRANSFERRING MICRO LED
The present invention provides a system for transferring a micro LED, the system transferring more efficiently a micro LED dropped in a solution.
HIGH-EFFICIENCY 1,000NM INFRARED LIGHT EMITTING DIODE, AND MANUFACTURING METHOD THEREOF
The present invention relates to an infrared light emitting diode and a manufacturing method thereof, and more specifically, to a 1,000 nm infrared light emitting diode with improved light emitting efficiency through compensation of strain, and a manufacturing method thereof.
HIGH-EFFICIENCY 1,000NM INFRARED LIGHT EMITTING DIODE, AND MANUFACTURING METHOD THEREOF
The present invention relates to an infrared light emitting diode and a manufacturing method thereof, and more specifically, to a 1,000 nm infrared light emitting diode with improved light emitting efficiency through compensation of strain, and a manufacturing method thereof.
DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME
A display device includes a display area where an image is displayed, a non-display area disposed adjacent to the display area, a first sub-pixel disposed in the display area, and a second sub-pixel disposed adjacent to the first sub-pixel in the display area. Each of the first sub-pixel and the second sub-pixel includes a plurality of alignment electrodes spaced apart from each other, and a plurality of light emitting elements disposed between the plurality of alignment electrodes. Each of the plurality of light emitting elements includes a first end having a first polarity, and a second end having a second polarity different from the first polarity. An orientation of the light emitting elements in the first sub-pixel and an orientation of the light emitting elements in the second sub-pixel are symmetrical. The first sub-pixel includes an identification pattern for distinguishing the first sub-pixel from the second sub-pixel.
DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME
A display device includes a display area where an image is displayed, a non-display area disposed adjacent to the display area, a first sub-pixel disposed in the display area, and a second sub-pixel disposed adjacent to the first sub-pixel in the display area. Each of the first sub-pixel and the second sub-pixel includes a plurality of alignment electrodes spaced apart from each other, and a plurality of light emitting elements disposed between the plurality of alignment electrodes. Each of the plurality of light emitting elements includes a first end having a first polarity, and a second end having a second polarity different from the first polarity. An orientation of the light emitting elements in the first sub-pixel and an orientation of the light emitting elements in the second sub-pixel are symmetrical. The first sub-pixel includes an identification pattern for distinguishing the first sub-pixel from the second sub-pixel.