A light-emitting component includes a substrate, plural light-emitting elements, and plural thyristors. The plural light-emitting elements are disposed on the substrate and emit light in a direction perpendicular to a front surface of the substrate. The plural thyristors are respectively stacked on the plural light-emitting elements and turn on to drive the light-emitting elements to emit light or to increase an emitted light amount. Each of the thyristors includes an opening in a path of light from the corresponding light-emitting element to the thyristor.

A light emitting composite includes a light emitting element and a three dimensional protection structure bound to the light emitting element and surrounding the light emitting element. The three dimensional protection structure includes a SiO.sub.3/2 moiety and a polymerizable functional group. A light emitting structure, an optical sheet, and an electronic device are also disclosed.

A light emitting composite includes a light emitting element and a three dimensional protection structure bound to the light emitting element and surrounding the light emitting element. The three dimensional protection structure includes a SiO.sub.3/2 moiety and a polymerizable functional group. A light emitting structure, an optical sheet, and an electronic device are also disclosed.

A display apparatus including a display panel including a base substrate and a first pad electrode on a first pad portion of the base substrate, a flexible substrate connected to the first pad portion, and a driving chip electrically connected to the flexible substrate. The flexible substrate includes a first film layer, a first wiring layer on the first film layer and comprising a plurality of wirings, a second film layer on the first wiring layer, and a second wiring layer on the second film layer and comprising a plurality of wirings. The wirings of the second wiring layer include a first_first wiring and a first_second wiring, the first_first wiring and the first_second wiring extend in a same direction along a same line and are spaced from each other by a gap therebetween. The gap is at an edge of the base substrate in a plan view.

A narrower LED package structure with sideways output of light suitable for a light guide plate includes two first electrodes, a package body, a cover layer, and two second electrodes. The LED chip is mounted on the first electrodes. The package body encapsulates the first electrodes, and surrounds the LED chip to define a light emitting region. The cover layer infills the light emitting region and covers the LED chip. The second electrodes are positioned outside the package body. Along a plane parallel to the first electrodes, a surface area of the two second electrodes is greater than a surface area of the portion of the two first electrodes positioned in the light emitting region.

A narrower LED package structure with sideways output of light suitable for a light guide plate includes two first electrodes, a package body, a cover layer, and two second electrodes. The LED chip is mounted on the first electrodes. The package body encapsulates the first electrodes, and surrounds the LED chip to define a light emitting region. The cover layer infills the light emitting region and covers the LED chip. The second electrodes are positioned outside the package body. Along a plane parallel to the first electrodes, a surface area of the two second electrodes is greater than a surface area of the portion of the two first electrodes positioned in the light emitting region.

The disclosed technology provides micro-assembled micro-LED displays and lighting elements using arrays of micro-LEDs that are too small (e.g., micro-LEDs with a width or diameter of 10 m to 50 m), numerous, or fragile to assemble by conventional means. The disclosed technology provides for micro-LED displays and lighting elements assembled using micro-transfer printing technology. The micro-LEDs can be prepared on a native substrate and printed to a display substrate (e.g., plastic, metal, glass, or other materials), thereby obviating the manufacture of the micro-LEDs on the display substrate. In certain embodiments, the display substrate is transparent and/or flexible.

The disclosed technology provides micro-assembled micro-LED displays and lighting elements using arrays of micro-LEDs that are too small (e.g., micro-LEDs with a width or diameter of 10 m to 50 m), numerous, or fragile to assemble by conventional means. The disclosed technology provides for micro-LED displays and lighting elements assembled using micro-transfer printing technology. The micro-LEDs can be prepared on a native substrate and printed to a display substrate (e.g., plastic, metal, glass, or other materials), thereby obviating the manufacture of the micro-LEDs on the display substrate. In certain embodiments, the display substrate is transparent and/or flexible.

A method of manufacturing a light emitting device can include forming an n-type GaN-based layer on a sapphire substrate; forming a GaN-based active layer on the n-type GaN-based layer; forming a p-type GaN-based layer on the GaN-based active layer; forming a p-type electrode on the p-type GaN-based layer; forming a metal substrate on the p-type electrode; removing the sapphire substrate; forming an n-type electrode on the n-type GaN-based layer; forming a passivation layer on a side surface of the p-type GaN-based layer, a side surface of the GaN-based active layer, a side surface of the n-type GaN-based layer, an upper surface of the n-type GaN-based layer, a side surface of the n-type electrode, and an upper surface of the n-type electrode after the forming the n-type electrode; and forming an open space to expose the n-type electrode by patterning the passivation layer.

A method of manufacturing a light emitting device can include forming an n-type GaN-based layer on a sapphire substrate; forming a GaN-based active layer on the n-type GaN-based layer; forming a p-type GaN-based layer on the GaN-based active layer; forming a p-type electrode on the p-type GaN-based layer; forming a metal substrate on the p-type electrode; removing the sapphire substrate; forming an n-type electrode on the n-type GaN-based layer; forming a passivation layer on a side surface of the p-type GaN-based layer, a side surface of the GaN-based active layer, a side surface of the n-type GaN-based layer, an upper surface of the n-type GaN-based layer, a side surface of the n-type electrode, and an upper surface of the n-type electrode after the forming the n-type electrode; and forming an open space to expose the n-type electrode by patterning the passivation layer.