A reflective optical data modulator includes a layer of optical material, a front partial optical reflector on a major surface of the layer of optical material, a back optical reflector, and at least two electrodes. The back optical reflector is at or near a portion of a second surface of the layer of optical material and faces the front partial optical reflector. The at least two, electrodes are located to enable application of a voltage across a portion of the layer of optical material. The layer of optical material has an optical absorption dependent on the voltage applied across the electrodes. The front partial optical reflector is an unburied layer structure.

A reflective optical data modulator includes a layer of optical material, a front partial optical reflector on a major surface of the layer of optical material, a back optical reflector, and at least two electrodes. The back optical reflector is at or near a portion of a second surface of the layer of optical material and faces the front partial optical reflector. The at least two, electrodes are located to enable application of a voltage across a portion of the layer of optical material. The layer of optical material has an optical absorption dependent on the voltage applied across the electrodes. The front partial optical reflector is an unburied layer structure.

A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

The invention relates to an optoelectronic component (10), comprising a carrier (1) and a plurality of nanorods (2), which are arranged on the carrier (1), wherein the nanorods (2) each comprise an active zone (2d). Furthermore, the optoelectronic component (10) comprises a potting compound (3), which is arranged on the carrier (1) and at least partially embeds the nanorods (2), and a structured metallization (5), which laterally surrounds the nanorods (2), wherein the nanorods (2) extend in a longitudinal direction N, the structured metallization (5) extends in a longitudinal direction M, and the longitudinal direction M of the structured metallization (5) extends transversely to the longitudinal direction N of the nanorods (2).

The invention relates to an optoelectronic component (10), comprising a carrier (1) and a plurality of nanorods (2), which are arranged on the carrier (1), wherein the nanorods (2) each comprise an active zone (2d). Furthermore, the optoelectronic component (10) comprises a potting compound (3), which is arranged on the carrier (1) and at least partially embeds the nanorods (2), and a structured metallization (5), which laterally surrounds the nanorods (2), wherein the nanorods (2) extend in a longitudinal direction N, the structured metallization (5) extends in a longitudinal direction M, and the longitudinal direction M of the structured metallization (5) extends transversely to the longitudinal direction N of the nanorods (2).

An embodiment provides a light-emitting element comprising: a light-emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first ohmic layer disposed on the first conductive semiconductor layer and having an opening part formed through a first region thereof; a first electrode disposed on a second region of the ohmic layer, and a second electrode disposed on the second conductive semiconductor layer.

An embodiment provides a light-emitting element comprising: a light-emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first ohmic layer disposed on the first conductive semiconductor layer and having an opening part formed through a first region thereof; a first electrode disposed on a second region of the ohmic layer, and a second electrode disposed on the second conductive semiconductor layer.

The method for manufacturing the heterojunction circuit according to one embodiment of the present disclosure comprises depositing a first electrode on at least a part of a waveguide, moving a semiconductor comprising a second electrode at a lower end thereof onto the first electrode, and depositing a third electrode on an upper end of the semiconductor, wherein the waveguide and the semiconductor comprise different materials. Additionally, the moving step further comprises generating microbubbles by supplying heat to at least a part of the semiconductor, moving the semiconductor on the first electrode by moving the generated microbubbles, and removing the microbubbles by positioning the semiconductor on the first electrode.

A color-conversion structure includes an article comprising a color-conversion material disposed within a color-conversion layer. At least a portion of a tether is within or extends from the article. The color-conversion structure can be disposed over a sacrificial portion of a substrate to form a micro-transfer printable device and micro-transfer printed to a display substrate. The color-conversion structure can include an light-emitting diode or laser diode that is over or under the article. Alternatively, the article is located on a side of a display substrate opposite an inorganic light-emitting diode. A display includes an array of color-conversion structures disposed on a display substrate.