A display device is disclosed. The display device includes a light-transmitting substrate having one surface, a pad formed on the one surface, and an electrode layer formed on the one surface, electrically connected to the pad, and having a mesh shape. The electrode layer includes a first region adjacent to the pad and spaced apart from the pad, and a second region connecting the pad to the first region. A density of the mesh shape of the second region is higher than a density of the mesh shape of the first region.

A photoelectric conversion device according to the present invention has a plurality of photoreceiving portions provided in a substrate, an interlayer film overlying the photoreceiving portion, a large refraction index region which is provided so as to correspond to the photoreceiving portion and has a higher refractive index than the interlayer film, and a layer which is provided in between the photoreceiving portion and the large refraction index region, and has a lower etching rate than the interlayer film, wherein the layer of the lower etching rate is formed so as to cover at least the whole surface of the photoreceiving portion. In addition, the layer of the lower etching rate has a refractive index in between the refractive indices of the large refraction index region and the substrate. Such a configuration can provide the photoelectric conversion device which inhibits the lowering of the sensitivity and the variation of the sensitivity among picture elements.

A light emitting device includes a first electrode, an insulating layer, a second electrode, and a bar-type light emitting diode (LED). The insulating layer includes a plurality of protruding parts protruding from the first electrode and at least one hole between the protruding parts. The second electrode on the insulating layer. The bar-type LED is in the at least one hole. The bar-type LED has a first end and a second end in the length direction. One of the first or second ends is connected to the first electrode and the other of the first or second ends is connected to the second electrode.

A light emitting device includes a first electrode, an insulating layer, a second electrode, and a bar-type light emitting diode (LED). The insulating layer includes a plurality of protruding parts protruding from the first electrode and at least one hole between the protruding parts. The second electrode on the insulating layer. The bar-type LED is in the at least one hole. The bar-type LED has a first end and a second end in the length direction. One of the first or second ends is connected to the first electrode and the other of the first or second ends is connected to the second electrode.

A light-emitting element, includes a substrate; and a semiconductor stack formed on the substrate, including: a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type; and a light-emitting stack formed between the first and second semiconductor layers; wherein in a cross-sectional view, an inner region of the first semiconductor layer includes a first region with a first thickness, and an edge of the first semiconductor layer includes a second region with a second thickness larger than the first thickness.

A light-emitting element, includes a substrate; and a semiconductor stack formed on the substrate, including: a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type; and a light-emitting stack formed between the first and second semiconductor layers; wherein in a cross-sectional view, an inner region of the first semiconductor layer includes a first region with a first thickness, and an edge of the first semiconductor layer includes a second region with a second thickness larger than the first thickness.

An ultra-small light-emitting diode (LED) electrode assembly having an improved luminance is provided. More particularly, an ultra-small LED electrode assembly in which light, which is blocked by an electrode and cannot be extracted, is minimized, an ultra-small LED device is connected to an ultra-small electrode without a defect such as an electrical short-circuit, and a very excellent luminance is exhibited even at a direct current (DC) driving voltage, and a method of manufacturing the same are provided.

A semiconductor light-emitting diode (LED) package is provided and includes a semiconductor LED chip having a surface on which a first electrode and a second electrode are formed; a first solder bump formed on the first electrode and a second solder bump formed on the second electrode, the first solder bump and the second solder bump protruding from the surface of the semiconductor LED chip; and a resin layer having a bottom portion that surrounds a first side surface of the first solder bump and a second side surface of the second solder bump and covers the surface of the semiconductor LED chip.

A semiconductor light-emitting diode (LED) package is provided and includes a semiconductor LED chip having a surface on which a first electrode and a second electrode are formed; a first solder bump formed on the first electrode and a second solder bump formed on the second electrode, the first solder bump and the second solder bump protruding from the surface of the semiconductor LED chip; and a resin layer having a bottom portion that surrounds a first side surface of the first solder bump and a second side surface of the second solder bump and covers the surface of the semiconductor LED chip.

The present invention relates to a vehicle lamp using a semiconductor light emitting device, and the vehicle lamp includes a light source unit to emit light. The light source unit includes a substrate having a reflective film, a semiconductor light emitting device coupled to the substrate, an insulating layer stacked on the reflective film to surround the semiconductor light emitting device, a first electrode and a second electrode disposed on an upper surface of the insulating layer, and light-transmitting connection electrodes extending from the first and second electrodes, respectively, electrically connected to the semiconductor light-emitting device, and covering an upper surface of the semiconductor light-emitting device.