Patent classifications
H01L33/36
Light emitting device, manufacturing method for the light emitting device, and lighting module having the light emitting device
A light emitting device includes: a first support member having an opening; a second support member disposed in the opening of the first support member; an adhesive member disposed between the first and second support members; a first lead electrode disposed on the second support member; a second lead electrode disposed on at least one of the first and second support members; a light emitting chip disposed on the first lead electrode, the light emitting chip being electrically connected to the second lead electrode; and a conductive layer disposed under the second support member, wherein the first support member includes a resin material, the second support member includes a ceramic material, and the first lead electrode is disposed between the light emitting chip and the second support member.
Light emitting device, manufacturing method for the light emitting device, and lighting module having the light emitting device
A light emitting device includes: a first support member having an opening; a second support member disposed in the opening of the first support member; an adhesive member disposed between the first and second support members; a first lead electrode disposed on the second support member; a second lead electrode disposed on at least one of the first and second support members; a light emitting chip disposed on the first lead electrode, the light emitting chip being electrically connected to the second lead electrode; and a conductive layer disposed under the second support member, wherein the first support member includes a resin material, the second support member includes a ceramic material, and the first lead electrode is disposed between the light emitting chip and the second support member.
PHOSPHOR COMPOSITION, LIGHT-EMITTING DEVICE PACKAGE INCLUDING SAME, AND LIGHTING DEVICE
According to an embodiment, a phosphor composition and a light-emitting device package including the same includes a first phosphor excited by an excited light source so as to emit light of a first wavelength area; a second phosphor excited by the excited light source so as to emit light of a second wavelength area; and a third phosphor excited by the excited light source so as to emit light of a third wavelength area. Therefore, light emitted from the phosphor composition has an improved color rendering index due to an increase in the intensity of light in a cyan wavelength area, and has an improved light velocity due to a shortened wavelength of light in a red wavelength area.
PHOSPHOR COMPOSITION, LIGHT-EMITTING DEVICE PACKAGE INCLUDING SAME, AND LIGHTING DEVICE
According to an embodiment, a phosphor composition and a light-emitting device package including the same includes a first phosphor excited by an excited light source so as to emit light of a first wavelength area; a second phosphor excited by the excited light source so as to emit light of a second wavelength area; and a third phosphor excited by the excited light source so as to emit light of a third wavelength area. Therefore, light emitted from the phosphor composition has an improved color rendering index due to an increase in the intensity of light in a cyan wavelength area, and has an improved light velocity due to a shortened wavelength of light in a red wavelength area.
Graphene-based solid state devices capable of emitting electromagnetic radiation and improvements thereof
Described herein are solid-state devices based on graphene in a Field Effect Transistor (FET) structure that emits high frequency Electromagnetic (EM) radiation using one or more DC electric fields and periodic magnetic arrays or periodic nanostructures. A number of devices are described that are capable of generating and emitting electromagnetic radiation.
Graphene-based solid state devices capable of emitting electromagnetic radiation and improvements thereof
Described herein are solid-state devices based on graphene in a Field Effect Transistor (FET) structure that emits high frequency Electromagnetic (EM) radiation using one or more DC electric fields and periodic magnetic arrays or periodic nanostructures. A number of devices are described that are capable of generating and emitting electromagnetic radiation.
DETECTION METHOD FOR LIGHT EMITTING DIODE CHIP
A detection method for an LED chip comprising the following steps: providing a container with a solvent therein, and putting the LED chips in the container to mix the LED chips with the solvent; providing a base with a circuit therein, the base forms a plurality of receiving holes, a bottom of each receiving holes have an N electrode and a P electrode coupled with the circuit; transferring the solvent and the LED chip mixed in the solvent on the base; detecting the LED chip received in the receiving holes; providing a carrier film and classifying the LED chips on the carrier film.
DETECTION METHOD FOR LIGHT EMITTING DIODE CHIP
A detection method for an LED chip comprising the following steps: providing a container with a solvent therein, and putting the LED chips in the container to mix the LED chips with the solvent; providing a base with a circuit therein, the base forms a plurality of receiving holes, a bottom of each receiving holes have an N electrode and a P electrode coupled with the circuit; transferring the solvent and the LED chip mixed in the solvent on the base; detecting the LED chip received in the receiving holes; providing a carrier film and classifying the LED chips on the carrier film.
Optoelectronic semiconductor component and method of producing an optoelectronic semiconductor component
An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.
Optoelectronic semiconductor component and method of producing an optoelectronic semiconductor component
An optoelectronic semiconductor component includes a light-emitting semiconductor body having a radiation side, a current expansion layer arranged on the radiation side of the semiconductor body and at least partially covers this side, wherein the current expansion layer includes an electrically-conductive material transparent to the light radiated by the semiconductor body, and particles of a further material, and an electrical contact arranged on a side of the current expansion layer facing away from the semiconductor body.