A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.

A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.

A light emitting device includes a first electrode, an insulating layer, a second electrode, and a bar-type light emitting diode (LED). The insulating layer includes a plurality of protruding parts protruding from the first electrode and at least one hole between the protruding parts. The second electrode on the insulating layer. The bar-type LED is in the at least one hole. The bar-type LED has a first end and a second end in the length direction. One of the first or second ends is connected to the first electrode and the other of the first or second ends is connected to the second electrode.

A light emitting device includes a first electrode, an insulating layer, a second electrode, and a bar-type light emitting diode (LED). The insulating layer includes a plurality of protruding parts protruding from the first electrode and at least one hole between the protruding parts. The second electrode on the insulating layer. The bar-type LED is in the at least one hole. The bar-type LED has a first end and a second end in the length direction. One of the first or second ends is connected to the first electrode and the other of the first or second ends is connected to the second electrode.

Disclosed herein is a light emitting diode. The light emitting diode includes: a light emitting diode chip; a first molding portion covering the light emitting diode chip and having a first index of refraction; a second molding portion covering the first molding portion and having a second index of refraction, wherein the second index of refraction is not higher than the first index of refraction. The light emitting diode chip is covered by a molding portion having a high index of refraction and a molding portion having a low index of refraction and covering the molding portion having a high index of refraction in order to reduce total reflection in the molding portions through reduction in difference in index of refraction between external air and the molding portion having a high index of refraction, thereby improving quantity of light.

Disclosed herein is a light emitting diode. The light emitting diode includes: a light emitting diode chip; a first molding portion covering the light emitting diode chip and having a first index of refraction; a second molding portion covering the first molding portion and having a second index of refraction, wherein the second index of refraction is not higher than the first index of refraction. The light emitting diode chip is covered by a molding portion having a high index of refraction and a molding portion having a low index of refraction and covering the molding portion having a high index of refraction in order to reduce total reflection in the molding portions through reduction in difference in index of refraction between external air and the molding portion having a high index of refraction, thereby improving quantity of light.

A LED flip-chip package substrate includes a ceramic base (e.g., aluminum nitride base), a conductive wire layer disposed on the ceramic base and having pads in pairs, an insulating protective layer (e.g., low-temperature glass glaze layer) disposed on a same side of the ceramic base as the conductive wire layer and exposing the pads, and a metallic reflective layer (e.g., aluminum layer) disposed on a side of the insulating protective layer facing away from the ceramic base and exposing the pads. Moreover, a LED package structure adopting the LED flip-chip package substrate and other LED package structures with similar material layers such as a chip-level packaged LED package structure are provided. By comprehensively utilizing advantages of various materials, the LED flip-chip package substrate with high heat conductivity, high reflectivity, high stability and superior insulation and the LED package structure with high reliability and even high light extraction efficiency are obtained.

The present invention relates to a display device and, particularly, to a display device using semiconductor light-emitting diodes. In the display device according to the present invention, at least one of the semiconductor light-emitting diodes comprises: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer having the first conductive electrode arranged thereon; a second conductive semiconductor layer overlapping with the first conductive semiconductor layer in a vertical direction, and having the second conductive electrode arranged thereon; and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein a connecting unit electrically connected to the first conductive electrode is formed on one surface of the first conductive semiconductor layer, and the connecting unit is arranged so as to lean to one side on the basis of the second conductive electrode along the horizontal direction.

The present invention relates to a display device and, particularly, to a display device using semiconductor light-emitting diodes. In the display device according to the present invention, at least one of the semiconductor light-emitting diodes comprises: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer having the first conductive electrode arranged thereon; a second conductive semiconductor layer overlapping with the first conductive semiconductor layer in a vertical direction, and having the second conductive electrode arranged thereon; and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein a connecting unit electrically connected to the first conductive electrode is formed on one surface of the first conductive semiconductor layer, and the connecting unit is arranged so as to lean to one side on the basis of the second conductive electrode along the horizontal direction.

A bonding electrode structure of a flip-chip LED chip includes: a substrate; a light-emitting epitaxial layer over the substrate; a bonding electrode over the light-emitting epitaxial layer, wherein the bonding electrode structure includes a metal laminated layer having a bottom layer and an upper surface layer from bottom up. The bottom layer structure is oxidable metal and the side wall forms an oxide layer. The upper surface layer is non-oxidable metal. The bonding electrode structure has a main contact portion, and a grid-shape portion surrounding the main contact portion in a horizontal direction. The problems during packaging and soldering of the flip-chip LED chip structure, such as short circuit or electric leakage, can thus be solved.