Various embodiments of light emitting dies and solid state lighting (SSL) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.

Various embodiments of light emitting dies and solid state lighting (SSL) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.

A light emitting device disclosed in the embodiment includes: a body including a recess having an open upper portion; a plurality of electrodes disposed at a bottom of the recess; and a light emitting diode disposed on at least one of the plurality of electrodes, wherein a side surface of the recess is inclined at a first angle with respect to an optical axis of the light emitting diode, and a value obtained by multiplying a value of a minimum distance between the light emitting diode and the side surface of the recess by a tangent value for the first angle ranges from 0.21 to 0.42.

A light emitting device disclosed in the embodiment includes: a body including a recess having an open upper portion; a plurality of electrodes disposed at a bottom of the recess; and a light emitting diode disposed on at least one of the plurality of electrodes, wherein a side surface of the recess is inclined at a first angle with respect to an optical axis of the light emitting diode, and a value obtained by multiplying a value of a minimum distance between the light emitting diode and the side surface of the recess by a tangent value for the first angle ranges from 0.21 to 0.42.

Provided is an optical semiconductor apparatus having an optical semiconductor device, a light-permeable buffer layer containing a cured high-hardness silicone resin having a thickness of 1-300 m, which covers at least part of a light-emitting surface of the optical semiconductor device, and a flexible sealing layer containing a cured flexible silicone resin having a lower hardness than the light-permeable buffer layer, which covers the optical semiconductor device and the light-permeable buffer layer.

Provided is an optical semiconductor apparatus having an optical semiconductor device, a light-permeable buffer layer containing a cured high-hardness silicone resin having a thickness of 1-300 m, which covers at least part of a light-emitting surface of the optical semiconductor device, and a flexible sealing layer containing a cured flexible silicone resin having a lower hardness than the light-permeable buffer layer, which covers the optical semiconductor device and the light-permeable buffer layer.

The invention provides an LED chip having an integrated electrostatic switch for electromechanical control of the LED. A suspended beam switch floats above a conductive control electrode, and by a charging of the electrode may be attracted downward to make connection between an LED structure and an external electrode. Components are mounted on a common substrate so that a fully integrated LED with MEMS switch is formed. Methods for producing the LED chip are further provided, in which production of the switching mechanism is fully integrated with the production of the LED structure.

The invention provides an LED chip having an integrated electrostatic switch for electromechanical control of the LED. A suspended beam switch floats above a conductive control electrode, and by a charging of the electrode may be attracted downward to make connection between an LED structure and an external electrode. Components are mounted on a common substrate so that a fully integrated LED with MEMS switch is formed. Methods for producing the LED chip are further provided, in which production of the switching mechanism is fully integrated with the production of the LED structure.

A method of producing a semiconductor device includes forming a stack including a semiconductor material having a Group III nitride semiconductor material formed on a growth substrate, a protective layer formed over the Group III nitride semiconductor material, and a handle layer and a stressor layer formed over the protective layer. The stack is spalled to separate the growth substrate from the stack.

A method of producing a semiconductor device includes forming a stack including a semiconductor material having a Group III nitride semiconductor material formed on a growth substrate, a protective layer formed over the Group III nitride semiconductor material, and a handle layer and a stressor layer formed over the protective layer. The stack is spalled to separate the growth substrate from the stack.