Disclosed are a light-emitting element and a production method therefor. In one aspect, a light-emitting element is provided to comprise a light-emitting structure comprising a first and second semiconductor layers and an active layer; a first and second contact electrodes respectively making ohmic contact with the first and second semiconductor layers; an insulating layer for insulating the first contact electrode and second contact electrode; a first and second bulk electrodes respectively electrically linked to the first and second contact electrodes; an insulating support covering the side surfaces of the first and second bulk electrodes; a first wavelength converter covering the light-emitting structure; a light-transmitting layer positioned on the first wavelength converter; and a second wavelength converter positioned on the light-transmitting layer, and, in the present invention, white light emitted from the light-emitting element has a CIEx value of at least 0.390 on the CIE color coordinate chart.

Disclosed are a light-emitting element and a production method therefor. In one aspect, a light-emitting element is provided to comprise a light-emitting structure comprising a first and second semiconductor layers and an active layer; a first and second contact electrodes respectively making ohmic contact with the first and second semiconductor layers; an insulating layer for insulating the first contact electrode and second contact electrode; a first and second bulk electrodes respectively electrically linked to the first and second contact electrodes; an insulating support covering the side surfaces of the first and second bulk electrodes; a first wavelength converter covering the light-emitting structure; a light-transmitting layer positioned on the first wavelength converter; and a second wavelength converter positioned on the light-transmitting layer, and, in the present invention, white light emitted from the light-emitting element has a CIEx value of at least 0.390 on the CIE color coordinate chart.

Disclosed are a light-emitting device package, a manufacturing method therefor, and a vehicle lamp and a backlight unit including the same. The light-emitting device package includes: a light-emitting chip having electrode pads positioned at a lower part thereof; a wavelength conversion unit for covering at least an upper surface and lateral surfaces of the light-emitting chip; and a reflective part which covers the lateral surfaces of the light-emitting chip. Accordingly, the light-emitting device package can be miniaturized and a separate substrate for forming a lens is not required.

Embodiments provide a light emitting device package including a first lead frame and a second lead frame, a light emitting device electrically connected to each of the first lead frame and the second lead frame, the light emitting device having a first electrode pad asymmetrically formed on a top surface thereof, and a reflective member disposed around the light emitting device to reflect light emitted from the light emitting device. The reflective member is configured such that a standard deviation of tilts of a reflective surface of a first area, in which the first electrode pad is disposed, is greater than a standard deviation of tilts of a reflective surface of a second area opposite to the first area.

Embodiments provide a light emitting device package including a first lead frame and a second lead frame, a light emitting device electrically connected to each of the first lead frame and the second lead frame, the light emitting device having a first electrode pad asymmetrically formed on a top surface thereof, and a reflective member disposed around the light emitting device to reflect light emitted from the light emitting device. The reflective member is configured such that a standard deviation of tilts of a reflective surface of a first area, in which the first electrode pad is disposed, is greater than a standard deviation of tilts of a reflective surface of a second area opposite to the first area.

An embodiment relates to a light-emitting element that easily dissipates heat through a pad and has a uniform heat distribution, the light-emitting element including a light-emitting structure that includes a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode that is formed on one side of the light-emitting structure and includes a plurality of contact parts electrically connected with the first semiconductor layer; a second electrode formed on the one side of the light-emitting structure and electrically connected with the second semiconductor layer; a first pad connected with the first electrode; and a second pad spaced apart from the first pad and connected with the second electrode, wherein the plurality of contact parts are arranged on the first and second pads.

An embodiment relates to a light-emitting element that easily dissipates heat through a pad and has a uniform heat distribution, the light-emitting element including a light-emitting structure that includes a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode that is formed on one side of the light-emitting structure and includes a plurality of contact parts electrically connected with the first semiconductor layer; a second electrode formed on the one side of the light-emitting structure and electrically connected with the second semiconductor layer; a first pad connected with the first electrode; and a second pad spaced apart from the first pad and connected with the second electrode, wherein the plurality of contact parts are arranged on the first and second pads.

Light emitter packages, systems, and methods having multiple light emitter chips and operable at multiple voltages are provided. In some aspects, light emitter packages described herein include a submount having a plurality of contact pads and a plurality of light emitting diode (LED) chips disposed over one or more surfaces thereof. The plurality of contact pads are configured to pass electrical current into the plurality of LED chips for allowing the package to be operable in at least two different voltages. The package can be operable at approximately 3 volts (V) or more, approximately 6V or more, approximately 9 V or more, approximately 12V or more, approximately 18 V or more, or approximately 36 V or more.

A micro light-emitting diode display device includes a circuit substrate, a first light-emitting element, a second light-emitting element, a third light-emitting element, and a conductive layer. The first light-emitting element, the second light-emitting element, and the third light-emitting element are disposed on the circuit substrate and have a first electrode and a second electrode, respectively. The first electrode of the first light-emitting element, the first electrode of the second light-emitting element, and the first electrode of the third light-emitting element are electrically connected to the circuit substrate. The second electrode of the first light-emitting element and the second electrode of the second light-emitting element are a continuous semiconductor material layer. The second electrode of the third light-emitting element is separated from the second electrode of the first light-emitting element and the second electrode of the second light-emitting element.

A micro light-emitting diode display device includes a circuit substrate, a first light-emitting element, a second light-emitting element, a third light-emitting element, and a conductive layer. The first light-emitting element, the second light-emitting element, and the third light-emitting element are disposed on the circuit substrate and have a first electrode and a second electrode, respectively. The first electrode of the first light-emitting element, the first electrode of the second light-emitting element, and the first electrode of the third light-emitting element are electrically connected to the circuit substrate. The second electrode of the first light-emitting element and the second electrode of the second light-emitting element are a continuous semiconductor material layer. The second electrode of the third light-emitting element is separated from the second electrode of the first light-emitting element and the second electrode of the second light-emitting element.