Disclosed is a semiconductor light emitting device including: a body with a bottom part having at least one hole formed therein; a semiconductor light emitting device chip to be placed in each of the at least one hole, with the semiconductor light emitting device chip being comprised of a plurality of semiconductor layers including an active layer for generating light by electron-hole recombination, and an electrode electrically connected to the plurality of semiconductor layers; and an encapsulating member for covering the semiconductor light emitting device chip, wherein a holedefining inner face of the bottom part has a plurality of angles of inclination.

An embodiment of a light emitting device includes a substrate; a first conductivity-type semiconductor layer disposed on the substrate; an active layer disposed on the first conductivity-type semiconductor layer, a plurality of quantum well layers and a plurality of quantum barrier layers being alternately stacked in the active layer; a second conductivity-type semiconductor layer disposed on the active layer; a contact layer disposed on the second conductivity-type semiconductor layer; a current spreading layer disposed on the contact layer; and a current blocking layer disposed on the second conductivity-type semiconductor layer, wherein the contact layer and/or the current spreading layer is formed to surround at least a portion of the current blocking layer and a maximum value of intensity of a diffracted X-ray beam when a Miller plane index is 400.

An embodiment of a light emitting device includes a substrate; a first conductivity-type semiconductor layer disposed on the substrate; an active layer disposed on the first conductivity-type semiconductor layer, a plurality of quantum well layers and a plurality of quantum barrier layers being alternately stacked in the active layer; a second conductivity-type semiconductor layer disposed on the active layer; a contact layer disposed on the second conductivity-type semiconductor layer; a current spreading layer disposed on the contact layer; and a current blocking layer disposed on the second conductivity-type semiconductor layer, wherein the contact layer and/or the current spreading layer is formed to surround at least a portion of the current blocking layer and a maximum value of intensity of a diffracted X-ray beam when a Miller plane index is 400.

A chip scale packaging (CSP) light-emitting device including a light-emitting semiconductor die and a layer-by-layer photoluminescent (PL) structure disposed on the light-emitting semiconductor die is disclosed. The PL structure includes a second PL layer and a first PL layer disposed over the second PL layer, wherein the first PL layer functions as a photoluminescent layer and a barrier layer protecting the second PL from ambient oxygen and moisture. The first PL layer includes a less-moisture-sensitive PL material dispersed within a first polymer matrix material, whereas the second PL layer includes a moisture-sensitive PL material dispersed within a second polymer material. With these arrangements, the outermost first PL layer comprising the less-moisture-sensitive photoluminescent material functions as a wavelength-conversion layer and also serves as a barrier layer protecting the inner second PL layer comprising the moisture-sensitive photoluminescent material from ambient oxygen and moisture. Thus degradation of moisture-sensitive PL material can be reduced.

Provided are a semiconductor light-emitting device capable of easily adjusting the light intensity of output light and a method for producing such a semiconductor light-emitting device. The semiconductor light-emitting device includes: a substrate; a light-emitting element mounted on the substrate; and a seal layer provided on the substrate so as to cover the light-emitting element. The seal layer contains resin and inorganic pigment particles. The inorganic particles have an average particle size of 1 m or larger and 50 m or smaller in a volumetric basis particle size distribution by a laser diffraction scattering particle size distribution measurement method. The inorganic particles distributed at a concentration becoming thicker in a direction toward said substrate.

Provided are a semiconductor light-emitting device capable of easily adjusting the light intensity of output light and a method for producing such a semiconductor light-emitting device. The semiconductor light-emitting device includes: a substrate; a light-emitting element mounted on the substrate; and a seal layer provided on the substrate so as to cover the light-emitting element. The seal layer contains resin and inorganic pigment particles. The inorganic particles have an average particle size of 1 m or larger and 50 m or smaller in a volumetric basis particle size distribution by a laser diffraction scattering particle size distribution measurement method. The inorganic particles distributed at a concentration becoming thicker in a direction toward said substrate.

A display device including pixels respectively containing a plurality of subpixels, the display device comprises: a light emitting diode (LED) array including a plurality of LED cells, the plurality of LED cells provided in the plurality of subpixels, the plurality of LED cells configured to emit light having substantially the same wavelength, each of the plurality of LED cells having a first surface and a second surface; thin-film transistor (TFT) circuitry including a plurality of TFT cells, each of the plurality of TFT cells disposed on the first surface of an LED cell of the plurality of LED cells and including source and drain regions and a gate electrode disposed between the source and drain regions; a wavelength conversion pattern disposed on the second surface of an LED cell of the plurality of LED cells, the wavelength conversion pattern including a composite of a quantum dot and/or a polymer, the quantum dot configured to emit different colors of light from colors of light emitted from other quantum dots of other wavelength conversion patterns; and a light blocking wall disposed between two of the plurality of subpixels including the plurality of LED cells and between wavelength conversion patterns to separate the plurality of subpixels.

A light emitting thyristor includes a stack structure having first to fourth semiconductor layers, and the third semiconductor layer includes at least a fifth semiconductor layer in contact with the second semiconductor layer and a sixth semiconductor layer in this order from the semiconductor substrate side. The sixth semiconductor layer is a layer having the smallest bandgap in all the layers forming the stack structure, and a difference Eg in bandgap between the fifth semiconductor layer and the sixth semiconductor layer is greater than or equal to 0.05 eV and less than or equal to 0.15 eV.

A light emitting thyristor includes a stack structure having first to fourth semiconductor layers, and the third semiconductor layer includes at least a fifth semiconductor layer in contact with the second semiconductor layer and a sixth semiconductor layer in this order from the semiconductor substrate side. The sixth semiconductor layer is a layer having the smallest bandgap in all the layers forming the stack structure, and a difference Eg in bandgap between the fifth semiconductor layer and the sixth semiconductor layer is greater than or equal to 0.05 eV and less than or equal to 0.15 eV.

The disclosed technology provides micro-assembled micro-LED displays and lighting elements using arrays of micro-LEDs that are too small (e.g., micro-LEDs with a width or diameter of 10 ?m to 50 ?m), numerous, or fragile to assemble by conventional means. The disclosed technology provides for micro-LED displays and lighting elements assembled using micro-transfer printing technology. The micro-LEDs can be prepared on a native substrate and printed to a display substrate (e.g., plastic, metal, glass, or other materials), thereby obviating the manufacture of the micro-LEDs on the display substrate. In certain embodiments, the display substrate is transparent and/or flexible.