A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.

In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

A method of fabricating a multicolor light-emitting diode (LED) display includes forming a first LED layer on a first release layer comprising a first two-dimensional (2D) material disposed on a first substrate. The first LED layer is configured to emit light at a first wavelength. The method also includes transferring the first LED layer from the first release layer to a host substrate and forming a second LED layer on a second release layer comprising a second 2D material disposed on a second substrate. The second LED layer is configured to emit light at a second wavelength. The method also includes removing the second LED layer from the second release layer and disposing the second LED layer on the first LED layer.

A method of fabricating a multicolor light-emitting diode (LED) display includes forming a first LED layer on a first release layer comprising a first two-dimensional (2D) material disposed on a first substrate. The first LED layer is configured to emit light at a first wavelength. The method also includes transferring the first LED layer from the first release layer to a host substrate and forming a second LED layer on a second release layer comprising a second 2D material disposed on a second substrate. The second LED layer is configured to emit light at a second wavelength. The method also includes removing the second LED layer from the second release layer and disposing the second LED layer on the first LED layer.

In an ultraviolet LED chip, an epitaxial structure can be isolated into two insulated structures, i.e. a first and a second epitaxial structures by growing the epitaxial structure on a surface of a substrate, and arranging an insulating layer and a groove contacting layer in the middle of the epitaxial structure. The N-type AlGaN layer is stretched out through the groove contacting layer. In the ultraviolet LED chip, through the cooperation among the N electrode, P electrode and intermediate electrode on the base plate along with the first and second epitaxial structures, an LED and an ESD are formed respectively. The ESD is connect to the ends of LED in anti-parallel for providing an electrostatic discharging channel, so as to reduce the direct damage of the ultraviolet LED chip caused by electrostatic discharging, and increase a forward voltage of the LED and the antistatic intensity.

In an ultraviolet LED chip, an epitaxial structure can be isolated into two insulated structures, i.e. a first and a second epitaxial structures by growing the epitaxial structure on a surface of a substrate, and arranging an insulating layer and a groove contacting layer in the middle of the epitaxial structure. The N-type AlGaN layer is stretched out through the groove contacting layer. In the ultraviolet LED chip, through the cooperation among the N electrode, P electrode and intermediate electrode on the base plate along with the first and second epitaxial structures, an LED and an ESD are formed respectively. The ESD is connect to the ends of LED in anti-parallel for providing an electrostatic discharging channel, so as to reduce the direct damage of the ultraviolet LED chip caused by electrostatic discharging, and increase a forward voltage of the LED and the antistatic intensity.

A driver circuit for a light-emitting diode arrangement has a supply terminal for connecting a voltage source. A boost converter inductance connects the supply terminal to a common circuit node. A switching unit connects the circuit node to ground depending on a switching signal. A rectifying unit connects the circuit node to an anode terminal for the light-emitting diode arrangement by way of a circuit branch to which a terminal of a storage capacitance and a terminal of an RC element are connected. A cathode terminal for the cathode side of the light-emitting diode arrangement is electrically connected to the circuit node. A buck converter inductance is connected in each case between the rectifying unit and the anode terminal and/or between the cathode terminal and the circuit node.