A driver circuit for a light-emitting diode arrangement has a supply terminal for connecting a voltage source. A boost converter inductance connects the supply terminal to a common circuit node. A switching unit connects the circuit node to ground depending on a switching signal. A rectifying unit connects the circuit node to an anode terminal for the light-emitting diode arrangement by way of a circuit branch to which a terminal of a storage capacitance and a terminal of an RC element are connected. A cathode terminal for the cathode side of the light-emitting diode arrangement is electrically connected to the circuit node. A buck converter inductance is connected in each case between the rectifying unit and the anode terminal and/or between the cathode terminal and the circuit node.

A light emitting diode display panel and a manufacturing method thereof, and a display device. The light emitting diode display panel includes a substrate, a plurality of light emitting diodes arranged in an array on the substrate; a plurality of polarization layers located on a light exit side of the plurality of light emitting diodes respectively, and the plurality of polarization layers are in a one-to-one correspondence to the plurality of light emitting diodes; the plurality of polarization layers include a plurality of first polarization layers and a plurality of second polarization layers having different polarization directions.

A light emitting diode display panel and a manufacturing method thereof, and a display device. The light emitting diode display panel includes a substrate, a plurality of light emitting diodes arranged in an array on the substrate; a plurality of polarization layers located on a light exit side of the plurality of light emitting diodes respectively, and the plurality of polarization layers are in a one-to-one correspondence to the plurality of light emitting diodes; the plurality of polarization layers include a plurality of first polarization layers and a plurality of second polarization layers having different polarization directions.

A method for manufacturing a micro light emitting diode device is provided. A connection layer and epitaxial structures are formed on a substrate. A first pad is formed on each of the epitaxial structures. A first adhesive layer is formed on the connection layer, and the first adhesive layer encapsulates the epitaxial structures and the first pads. A first substrate is connected to the first adhesive layer. The substrate is removed, and a second substrate is connected to the connection layer through a second adhesive layer. The first substrate and the first adhesive layer are removed. The connection layer located between any two adjacent epitaxial structures are partially removed to form a plurality of connection portions. Each of the connection portions is connected to the corresponding epitaxial structure, and a side edge of each of the connection portions protrudes from a side wall surface of the corresponding epitaxial structure.

A method for manufacturing a micro light emitting diode device is provided. A connection layer and epitaxial structures are formed on a substrate. A first pad is formed on each of the epitaxial structures. A first adhesive layer is formed on the connection layer, and the first adhesive layer encapsulates the epitaxial structures and the first pads. A first substrate is connected to the first adhesive layer. The substrate is removed, and a second substrate is connected to the connection layer through a second adhesive layer. The first substrate and the first adhesive layer are removed. The connection layer located between any two adjacent epitaxial structures are partially removed to form a plurality of connection portions. Each of the connection portions is connected to the corresponding epitaxial structure, and a side edge of each of the connection portions protrudes from a side wall surface of the corresponding epitaxial structure.

A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.

A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.

Contrary to conventional wisdom, which holds that light-emitting diodes (LEDs) should be cooled to increase efficiency, the LEDs disclosed herein are heated to increase efficiency. Heating an LED operating at low forward bias voltage (e.g., V<k.sub.BT/q) can be accomplished by injecting phonons generated by non-radiative recombination back into the LED's semiconductor lattice. This raises the temperature of the LED's active rejection, resulting in thermally assisted injection of holes and carriers into the LED's active region. This phonon recycling or thermo-electric pumping process can be promoted by heating the LED with an external source (e.g., exhaust gases or waste heat from other electrical components). It can also be achieved via internal heat generation, e.g., by thermally insulating the LED's diode structure to prevent (rather than promote) heat dissipation. In other words, trapping heat generated by the LED within the LED increases LED efficiency under certain bias conditions.

Contrary to conventional wisdom, which holds that light-emitting diodes (LEDs) should be cooled to increase efficiency, the LEDs disclosed herein are heated to increase efficiency. Heating an LED operating at low forward bias voltage (e.g., V<k.sub.BT/q) can be accomplished by injecting phonons generated by non-radiative recombination back into the LED's semiconductor lattice. This raises the temperature of the LED's active rejection, resulting in thermally assisted injection of holes and carriers into the LED's active region. This phonon recycling or thermo-electric pumping process can be promoted by heating the LED with an external source (e.g., exhaust gases or waste heat from other electrical components). It can also be achieved via internal heat generation, e.g., by thermally insulating the LED's diode structure to prevent (rather than promote) heat dissipation. In other words, trapping heat generated by the LED within the LED increases LED efficiency under certain bias conditions.

A light-emitting device package of embodiments comprises: a substrate; a light-emitting structure which is arranged below the substrate comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first electrode which is connected to the first conductive type semiconductor layer; a first insulation layer which is arranged on the side section of the light-emitting structure and the side and lower sections of the first electrode; a first pad which passes through the first insulation layer and is connected to the first conductive type semiconductor layer; a second electrode which passes through the first insulation layer, the first conductive type semiconductor layer and the active layer and is connected to the second conductive type semiconductor layer; a second pad which is connected to the second electrode; and a protective layer which extends from the top of the first insulation layer arranged on the side section of the light-emitting structure to the top of the first insulation layer arranged on the top of the first electrode, and is arranged so as to cover a bent part of the first insulation layer.