A light-emitting device package of embodiments comprises: a substrate; a light-emitting structure which is arranged below the substrate comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first electrode which is connected to the first conductive type semiconductor layer; a first insulation layer which is arranged on the side section of the light-emitting structure and the side and lower sections of the first electrode; a first pad which passes through the first insulation layer and is connected to the first conductive type semiconductor layer; a second electrode which passes through the first insulation layer, the first conductive type semiconductor layer and the active layer and is connected to the second conductive type semiconductor layer; a second pad which is connected to the second electrode; and a protective layer which extends from the top of the first insulation layer arranged on the side section of the light-emitting structure to the top of the first insulation layer arranged on the top of the first electrode, and is arranged so as to cover a bent part of the first insulation layer.

Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer, an adhesive layer contacting a top surface of the first conductive semiconductor layer, a first electrode contacting a top surface of the first conductive semiconductor and a top surface of the adhesive layer, and a second electrode contacting the second conductive semiconductor layer, wherein the adhesive layer contacting the first electrode is spaced apart from the second electrode.

The present disclosure provides an LED package structure and a method for manufacturing the LED package structure. The LED package structure includes: a chip scale package (CSP) light emitting element and a shading layer, where the CSP light emitting element includes a light emitting chip, and the light emitting chip includes an electrode group located on a bottom surface of the light emitting chip, the shading layer is disposed on a bottom surface and/or a side surface of the CSP light emitting element. An LED package structure according to the present disclosure solves a problem that the blue light leaking from the bottom surface of the LED chip interferes with the emission color of the CSP emitting device, and reduces the luminous efficiency of the emitting device.

The present disclosure provides an LED package structure and a method for manufacturing the LED package structure. The LED package structure includes: a chip scale package (CSP) light emitting element and a shading layer, where the CSP light emitting element includes a light emitting chip, and the light emitting chip includes an electrode group located on a bottom surface of the light emitting chip, the shading layer is disposed on a bottom surface and/or a side surface of the CSP light emitting element. An LED package structure according to the present disclosure solves a problem that the blue light leaking from the bottom surface of the LED chip interferes with the emission color of the CSP emitting device, and reduces the luminous efficiency of the emitting device.

A light emitting device package according to an embodiment includes: a package body; a light emitting device disposed on the package body; and an adhesive disposed between the package body and the light emitting device. The package body includes first and second openings passing through the package body on an upper surface of the package body and a recess provided to concave in a direction of a lower surface of the package body from the upper surface of the package body. The light emitting device includes a first bonding part disposed on the first opening and a second bonding part disposed on the second opening. The adhesive is provided at the recess.

As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the time of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.

As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the time of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.

The present embodiments disclose a light emitting device. The light emitting device disclosed includes a first conductive semiconductor layer; an active layer that is disposed on a first conductive semiconductor layer and generates ultraviolet wavelength; an electron blocking layer that is disposed on the active layer; a second conductive semiconductor layer that is disposed on the electron blocking layer; a third conductive semiconductor layer that is disposed on the second conductive semiconductor layer; and an electrode that is disposed on the third conductive semiconductor layer, in which the second and third conductive semiconductor layers include an AlGaN semiconductor, and in which the third conductive semiconductor layer has a lower aluminum composition than that of the second conductive semiconductor layer and has an electrical contact resistance with the electrode that is lower than that of the second conductive semiconductor layer.

The present embodiments disclose a light emitting device. The light emitting device disclosed includes a first conductive semiconductor layer; an active layer that is disposed on a first conductive semiconductor layer and generates ultraviolet wavelength; an electron blocking layer that is disposed on the active layer; a second conductive semiconductor layer that is disposed on the electron blocking layer; a third conductive semiconductor layer that is disposed on the second conductive semiconductor layer; and an electrode that is disposed on the third conductive semiconductor layer, in which the second and third conductive semiconductor layers include an AlGaN semiconductor, and in which the third conductive semiconductor layer has a lower aluminum composition than that of the second conductive semiconductor layer and has an electrical contact resistance with the electrode that is lower than that of the second conductive semiconductor layer.