An LED module is disclosed containing an integrated MOSFET driver transistor in series with an LED. In one embodiment, GaN-based LED layers are epitaxially grown over an interface layer on a silicon substrate. The MOSFET gate is formed in a trench in the silicon substrate and creates a vertical channel between a top source and a bottom drain when the gate is biased to turn on the LED. A conductor on the die connects the MOSFET in series with the LED. One power electrode is located on a top of the die, another power electrode is located on the bottom of the die, and the gate electrode may be on the top or the side of the die.

An LED module is disclosed containing an integrated MOSFET driver transistor in series with an LED. In one embodiment, GaN-based LED layers are epitaxially grown over an interface layer on a silicon substrate. The MOSFET gate is formed in a trench in the silicon substrate and creates a vertical channel between a top source and a bottom drain when the gate is biased to turn on the LED. A conductor on the die connects the MOSFET in series with the LED. One power electrode is located on a top of the die, another power electrode is located on the bottom of the die, and the gate electrode may be on the top or the side of the die.

The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

An embodiment relates to an ultraviolet light-emitting diode, a method for manufacturing a light-emitting diode, a light-emitting diode package, and a lighting system. The light-emitting diode according to an embodiment includes: a second electrode layer (120); a second conductive type AlGaN-based semiconductor layer (119) on the second electrode layer (120); an active layer (117) on the second conductive type AlGaN-based semiconductor layer (119); a current spreading layer (115) including a first conductive type Al.sub.xGa.sub.1-xN layer (0<x0.25) (115c) and disposed on the active layer (117); and a first conductive type AlGaN-based semiconductor layer (114) disposed on the current spreading layer (115). A composition x of Al in the first conductive type Al.sub.xGa.sub.1-xN layer (0<x0.25) (115c) may be reduced in a direction of the active layer (117) from the first conductive type first AlGaN-based semiconductor layer (114).

An embodiment relates to an ultraviolet light-emitting diode, a method for manufacturing a light-emitting diode, a light-emitting diode package, and a lighting system. The light-emitting diode according to an embodiment includes: a second electrode layer (120); a second conductive type AlGaN-based semiconductor layer (119) on the second electrode layer (120); an active layer (117) on the second conductive type AlGaN-based semiconductor layer (119); a current spreading layer (115) including a first conductive type Al.sub.xGa.sub.1-xN layer (0<x0.25) (115c) and disposed on the active layer (117); and a first conductive type AlGaN-based semiconductor layer (114) disposed on the current spreading layer (115). A composition x of Al in the first conductive type Al.sub.xGa.sub.1-xN layer (0<x0.25) (115c) may be reduced in a direction of the active layer (117) from the first conductive type first AlGaN-based semiconductor layer (114).

Provided are a light emitting diode capable of improving contrast, a method for manufacturing a light emitting diode, a light emitting diode display device, and a method for manufacturing a light emitting diode display device. The light emitting diode according to an embodiment comprises a package substrate having an electrode provided therein; a light emitting diode chip provided on the package substrate; a power line electrically connecting the light emitting diode chip to the electrode; and a black layer covering the electrode including a part connected to the power line.

Provided are a light emitting diode capable of improving contrast, a method for manufacturing a light emitting diode, a light emitting diode display device, and a method for manufacturing a light emitting diode display device. The light emitting diode according to an embodiment comprises a package substrate having an electrode provided therein; a light emitting diode chip provided on the package substrate; a power line electrically connecting the light emitting diode chip to the electrode; and a black layer covering the electrode including a part connected to the power line.

A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer. The active layer may include a first barrier layer arranged to have a tensile strain, a second barrier layer arranged to have a tensile strain, and a first well layer disposed between the first barrier layer and the second barrier layer. The active layer may also include a first unstrained barrier layer, a second unstrained barrier layer, and a second well layer disposed between the first unstrained barrier layer and the second unstrained barrier layer.

A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer. The active layer may include a first barrier layer arranged to have a tensile strain, a second barrier layer arranged to have a tensile strain, and a first well layer disposed between the first barrier layer and the second barrier layer. The active layer may also include a first unstrained barrier layer, a second unstrained barrier layer, and a second well layer disposed between the first unstrained barrier layer and the second unstrained barrier layer.