A semiconductor light-emitting element including a first semiconductor layer of a first conductivity type; a light-emitting functional layer that includes first and second light-emitting layers; and a second semiconductor layer of a conductivity type opposite to the conductivity type of the first semiconductor layer. The first light-emitting layer has a first base layer with a composition subject to stress strain from the first semiconductor layer; a first quantum well layer that retains a segment shape of the first base segment; and a first barrier layer that has a flat surface flattened by embedding the first base layer and the first quantum well layer. The second light-emitting layer has a second base layer that has a composition subject to stress strain from the first barrier layer; a second quantum well layer that retains a segment shape of the second base segment; and a second barrier layer.

A semiconductor light-emitting element including a first semiconductor layer of a first conductivity type; a light-emitting functional layer that includes first and second light-emitting layers; and a second semiconductor layer of a conductivity type opposite to the conductivity type of the first semiconductor layer. The first light-emitting layer has a first base layer with a composition subject to stress strain from the first semiconductor layer; a first quantum well layer that retains a segment shape of the first base segment; and a first barrier layer that has a flat surface flattened by embedding the first base layer and the first quantum well layer. The second light-emitting layer has a second base layer that has a composition subject to stress strain from the first barrier layer; a second quantum well layer that retains a segment shape of the second base segment; and a second barrier layer.

Solid state lighting (SSL) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.

Solid state lighting (SSL) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.

To provide a display body device and a display apparatus that allow for improvement of an electrostatic withstanding voltage, a display body device 10E includes: a wiring substrate 30; a light-emitting element 12 and a drive IC 13 that are disposed on the wiring substrate 30; and a wiring pattern 36 that is disposed on an outermost side, and is at least partially exposed and has a potential equal to a ground of each of the light-emitting element 12 and the drive IC 13.

To provide a display body device and a display apparatus that allow for improvement of an electrostatic withstanding voltage, a display body device 10E includes: a wiring substrate 30; a light-emitting element 12 and a drive IC 13 that are disposed on the wiring substrate 30; and a wiring pattern 36 that is disposed on an outermost side, and is at least partially exposed and has a potential equal to a ground of each of the light-emitting element 12 and the drive IC 13.

An electro-optic modulator includes a doped semiconductor crystal having a crystallographic surface having an amplitude modulation orientation, a first metal electrode located on a first surface of the doped semiconductor crystal, a second metal electrode located on a second surface of the doped semiconductor crystal, and accumulation space charge regions located within surface regions of the doped semiconductor crystal that are proximal to the first metal electrode and the second metal electrode and including excess charge carriers of a same type as majority charge carriers of the doped semiconductor crystal.

A light emitting device package according to an embodiment includes: a body including first and second openings passing through an upper surface of the body and a lower surface of the body; a light emitting device disposed on the body and including first and second bonding parts; and first and second conductive layers disposed under the body and electrically connected to the first and second bonding parts, respectively, wherein each of the first and second bonding parts includes a protrusion portion protruding and extending in a downwards direction within the first and second openings, respectively.

A light emitting device package according to an embodiment includes: a body including first and second openings passing through an upper surface of the body and a lower surface of the body; a light emitting device disposed on the body and including first and second bonding parts; and first and second conductive layers disposed under the body and electrically connected to the first and second bonding parts, respectively, wherein each of the first and second bonding parts includes a protrusion portion protruding and extending in a downwards direction within the first and second openings, respectively.

A light-emitting element provides a substrate; a plurality of light-emitting cells arranged on the substrate and spaced apart from each other; a connection wire configured to electrically interconnect the light-emitting cells; a first bonding pad electrically connected to the second conductive semiconductor layer of a first light-emitting cell among the light-emitting cells; and a second bonding pad electrically connected to the first conductive semiconductor layer of a second light-emitting cell among the light-emitting cells, wherein a boundary area includes a first boundary disposed between the light-emitting cells adjacent to each other in a first direction among the plurality of light-emitting, and wherein all of the first boundary areas are spaced apart from each other in the first direction.