A light-emitting element provides a substrate; a plurality of light-emitting cells arranged on the substrate and spaced apart from each other; a connection wire configured to electrically interconnect the light-emitting cells; a first bonding pad electrically connected to the second conductive semiconductor layer of a first light-emitting cell among the light-emitting cells; and a second bonding pad electrically connected to the first conductive semiconductor layer of a second light-emitting cell among the light-emitting cells, wherein a boundary area includes a first boundary disposed between the light-emitting cells adjacent to each other in a first direction among the plurality of light-emitting, and wherein all of the first boundary areas are spaced apart from each other in the first direction.

A semiconductor light emitting device includes a substrate a semiconductor light emitting element that is disposed on the substrate and that emits light along a direction substantially parallel to a main surface of the substrate a wavelength conversion element that is disposed on a light emitting side of the semiconductor light emitting element, that absorbs a portion of the light emitted from the semiconductor light emitting element, and that emits light having a wavelength different from that of the absorbed light; and a holding member that is disposed on the substrate and holds the wavelength conversion element.

A semiconductor light emitting device includes a substrate a semiconductor light emitting element that is disposed on the substrate and that emits light along a direction substantially parallel to a main surface of the substrate a wavelength conversion element that is disposed on a light emitting side of the semiconductor light emitting element, that absorbs a portion of the light emitted from the semiconductor light emitting element, and that emits light having a wavelength different from that of the absorbed light; and a holding member that is disposed on the substrate and holds the wavelength conversion element.

An optoelectronic semiconductor includes a carrier, a semiconductor main body having a first semiconductor layer, a second semiconductor layer, and a radiation emitting layer for generating electromagnetic radiation, the semiconductor main body having at least one recess extending through the radiation emitting layer; a first electrode and a second electrode; a first electrical connection layer electrically connected between the first semiconductor layer and the first electrode; a second electrical connection layer electrically connected between the second semiconductor layer and the second electrode and extending through the recess from the carrier to the second semiconductor layer; and a zener diode structure disposed between the first electrical connection layer and the second electrical connection layer so that the first electrical connection layer and the second electrical connection layer are electrically dependent, wherein at least a portion of the zener diode structure is located in a current path between the first electrode and the second electrode.

An optoelectronic semiconductor includes a carrier, a semiconductor main body having a first semiconductor layer, a second semiconductor layer, and a radiation emitting layer for generating electromagnetic radiation, the semiconductor main body having at least one recess extending through the radiation emitting layer; a first electrode and a second electrode; a first electrical connection layer electrically connected between the first semiconductor layer and the first electrode; a second electrical connection layer electrically connected between the second semiconductor layer and the second electrode and extending through the recess from the carrier to the second semiconductor layer; and a zener diode structure disposed between the first electrical connection layer and the second electrical connection layer so that the first electrical connection layer and the second electrical connection layer are electrically dependent, wherein at least a portion of the zener diode structure is located in a current path between the first electrode and the second electrode.

A lateral light emitting diode device includes: a substrate; an n-type GaN layer disposed on the substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a MESA region formed by removing portions of the current spreading layer, the p-type GaN layer, the activation layer, and the n-type GaN layer; a transparent window layer disposed on the n-type GaN layer in the entire or part of the MESA region; a plurality of contact plugs which is in contact with the n-type GaN layer through the transparent window layer; and an n-electrode disposed on the transparent window layer to connect the plurality of contact plugs to each other.

A lateral light emitting diode device includes: a substrate; an n-type GaN layer disposed on the substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a MESA region formed by removing portions of the current spreading layer, the p-type GaN layer, the activation layer, and the n-type GaN layer; a transparent window layer disposed on the n-type GaN layer in the entire or part of the MESA region; a plurality of contact plugs which is in contact with the n-type GaN layer through the transparent window layer; and an n-electrode disposed on the transparent window layer to connect the plurality of contact plugs to each other.

One embodiment comprises: a substrate; a first conductive semiconductor layer disposed on the substrate; a second conductive semiconductor layer disposed on the first conductive semiconductor layer; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the first conductive semiconductor layer comprises a first area where a partial area of the first conductive semiconductor layer is exposed, and comprises an inclination part which is disposed between the upper surface of the first area and the upper surface of the second conductive semiconductor layer, wherein the inclination part comprises a first edge making contact with the upper surface of the second conductive semiconductor layer, and a second edge making contact with the upper surface of the first area of the first conductive semiconductor layer, wherein the ratio of a first length to a second length is 1:0.87 to 1:4.26, wherein the first length is a length in a first direction between the first edge and the second edge, and the second length is a length in a second direction between the first edge and the second edge, wherein the first direction and the second direction are directions that are perpendicular to each other.

One embodiment comprises: a substrate; a first conductive semiconductor layer disposed on the substrate; a second conductive semiconductor layer disposed on the first conductive semiconductor layer; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the first conductive semiconductor layer comprises a first area where a partial area of the first conductive semiconductor layer is exposed, and comprises an inclination part which is disposed between the upper surface of the first area and the upper surface of the second conductive semiconductor layer, wherein the inclination part comprises a first edge making contact with the upper surface of the second conductive semiconductor layer, and a second edge making contact with the upper surface of the first area of the first conductive semiconductor layer, wherein the ratio of a first length to a second length is 1:0.87 to 1:4.26, wherein the first length is a length in a first direction between the first edge and the second edge, and the second length is a length in a second direction between the first edge and the second edge, wherein the first direction and the second direction are directions that are perpendicular to each other.

A micro LED touch display pane of reduced thickness includes a substrate, a display driving layer, micro LEDs on the display driving layer, and common electrodes connecting to the micro LEDs. The micro LEDs are spaced apart from each other and coupled to the display driving layer. The common electrodes cover the micro LEDs. The touch display panel further includes first and second electrodes. The common electrodes and the first electrodes are defined in one layer, insulated from the second electrodes. The first electrodes and the second electrodes cooperatively form mutual-capacitance touch sensing structures.