Provided are an open-mode protection device and an electronic device having the same. An open-mode protection device according to an embodiment of the present invention is connected in parallel to each of a constant current source and a load configured with a light emitting diode (LED). The open-mode protection device comprises a first external electrode connected to one sides of the constant current source and the load; a second external electrode connected to the other sides of the constant current source and the load, and a ground; a protection unit configured to bypass, to the ground through the second external electrode, an overvoltage or an overcurrent flowing into the first external electrode; and a current suppressing unit connected in series to the protection unit and configured to sense a temperature or current of the protection unit and reduce the current of the protection unit as the temperature or current increases.

Provided are an open-mode protection device and an electronic device having the same. An open-mode protection device according to an embodiment of the present invention is connected in parallel to each of a constant current source and a load configured with a light emitting diode (LED). The open-mode protection device comprises a first external electrode connected to one sides of the constant current source and the load; a second external electrode connected to the other sides of the constant current source and the load, and a ground; a protection unit configured to bypass, to the ground through the second external electrode, an overvoltage or an overcurrent flowing into the first external electrode; and a current suppressing unit connected in series to the protection unit and configured to sense a temperature or current of the protection unit and reduce the current of the protection unit as the temperature or current increases.

Disclosed is a light emitting device including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the light emitting structure has a top surface including a first side and a second side which face each other, and a third side and a fourth side which face each other.

Disclosed is a light emitting device including a substrate, a light emitting structure arranged on the substrate, the light emitting structure including a first semiconductor layer, a second semiconductor layer and an active layer arranged between the first semiconductor layer and the second semiconductor layer, a first electrode electrically connected to the first semiconductor layer, and a second electrode electrically connected to the second semiconductor layer, wherein the light emitting structure has a top surface including a first side and a second side which face each other, and a third side and a fourth side which face each other.

An optoelectronic semiconductor chip has a semiconductor body and a substrate on which the semiconductor body is disposed. The semiconductor body has an active region disposed between a first semiconductor layer of a first conductor type and a second semiconductor layer of a second conductor type. The first semiconductor layer is disposed on the side of the active region facing the substrate. The first semiconductor layer is electrically conductively connected to a first termination layer that is disposed between the substrate and the semiconductor body. An encapsulation layer is disposed between the first termination layer and the substrate and, in plan view of the semiconductor chip, projects at least in some regions over a side face which delimits the semiconductor body.

A light-emitting element includes: a semiconductor structure; light-reflecting electrodes; a first insulating film having: one or more first n-side openings and one or more first p-side openings; one or more interconnect electrodes on an upper surface of the first insulating film; a first electrode on the upper surface of the first insulating film; a second electrode on the upper surface of the first insulating film; a second insulating film having: one or more second n-side openings and one or more second p-side openings; a first external connection portion; and a second external connection portion.

A light-emitting element includes: a semiconductor structure; light-reflecting electrodes; a first insulating film having: one or more first n-side openings and one or more first p-side openings; one or more interconnect electrodes on an upper surface of the first insulating film; a first electrode on the upper surface of the first insulating film; a second electrode on the upper surface of the first insulating film; a second insulating film having: one or more second n-side openings and one or more second p-side openings; a first external connection portion; and a second external connection portion.

Embodiments of the disclosed subject matter provide an emissive layer, a first electrode layer, a plurality of nanoparticles and a material disposed between the first electrode layer and the plurality of nanoparticles. In some embodiments, the device may include a second electrode layer and a substrate, where the second electrode layer is disposed on the substrate, and the emissive layer is disposed on the second electrode layer. In some embodiments, a second electrode layer may be disposed on the substrate, the emissive layer may be disposed on the second electrode layer, the first electrode layer may be disposed on the emissive layer, a first dielectric layer of the material may be disposed on the first electrode layer, the plurality of nanoparticles may be disposed on the first dielectric layer, and a second dielectric layer may be disposed on the plurality of nanoparticles and the first dielectric layer.

A display device and a method of manufacturing the display device are proposed. The method may include disposing light emitting elements on a first transfer film; stretching the first transfer film so that the plurality of light emitting elements are spaced apart from each other; transferring the light emitting elements onto a thin film transistor array substrate; and removing the transfer film from the light emitting elements.

An organic EL element includes a pixel electrode, a light emitting function layer that is formed on the pixel electrode, an electron injection layer formed on the light emitting function layer, and a counter electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity, in which the counter electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more, and an adsorption layer is formed on the counter electrode.