The present invention relates to an organic light-emitting element and a production method thereof. Specifically, the present invention relates to an organic light-emitting element, which has excellent productivity during mass production thereof and may allow simplification of vapor deposition equipment, and the like, and a production method thereof.

The present application provides a display panel. The display panel includes an array substrate which includes a display region and a frame region. The frame region includes a gate circuit drive unit, the gate circuit drive unit comprises a thin film transistor, and the thin film transistor comprises a source, a drain and a gate. The frame region further includes a driving circuit and a first signal lead line, the first signal lead line is arranged on a single layer and arranged on a same layer as the signal transmission wire layer, one end of the first signal lead line is electrically connected to the gate and the other end of the first signal lead line is electrically connected to the driving circuit.

The present application provides a display panel. The display panel includes an array substrate which includes a display region and a frame region. The frame region includes a gate circuit drive unit, the gate circuit drive unit comprises a thin film transistor, and the thin film transistor comprises a source, a drain and a gate. The frame region further includes a driving circuit and a first signal lead line, the first signal lead line is arranged on a single layer and arranged on a same layer as the signal transmission wire layer, one end of the first signal lead line is electrically connected to the gate and the other end of the first signal lead line is electrically connected to the driving circuit.

A light-emitting element disclosed according to an embodiment may comprise: a substrate comprising a body, a plurality of lead electrodes arranged over the body in a first axial direction, and a heat-radiating frame and a plurality of lead frames arranged below the body in a second axial direction; and a light-emitting chip arranged on a first lead electrode, which is arranged in the central area of the body among the plurality of lead electrodes, and electrically connected with the plurality of lead electrodes. The plurality of lead electrodes have a large length in the second axial direction, the heat-radiating frame is arranged in the central area below the body, and the heat-radiating frame and the plurality of lead frames have a large length in the first axial direction and may vertically overlap with the plurality of lead electrodes.

Disclosed is a method for fabricating an LED module. The method includes: constructing a chip-on-carrier including a chip retainer having a horizontal bonding plane and a plurality of LED chips in which electrode pads are bonded to the bonding plane of the chip retainer; and transferring the plurality of LED chips in a predetermined arrangement from the chip retainer to a substrate by transfer printing. The transfer printing includes: primarily section-wise exposing a transfer tape to reduce the adhesive strength of the transfer tape such that bonding areas are formed at predetermined intervals on the transfer tape; and pressurizing the transfer tape against the LED chips on the chip retainer to attach the LED chips to the corresponding bonding areas of the transfer tape and detaching the electrode pads of the LED chips from the chip retainer to pick up the chips.

There is provided a self-supporting polycrystalline gallium nitride substrate having excellent characteristics such as high luminous efficiency and high conversion efficiency when used for devices, such as light emitting devices and solar cells. The self-supporting polycrystalline gallium nitride substrate is composed of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate, and has a top surface and a bottom surface. The crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis on the top surface are distributed at various tilt angles from the specific crystal orientation, in which the average tilt angle thereof is 0.1 or more and less than 1 and the cross-sectional average diameter D.sub.T of the gallium nitride-based single crystal grains at the outermost surface exposed on the top surface is 10 m or more.

There is provided a self-supporting polycrystalline gallium nitride substrate having excellent characteristics such as high luminous efficiency and high conversion efficiency when used for devices, such as light emitting devices and solar cells. The self-supporting polycrystalline gallium nitride substrate is composed of gallium nitride-based single crystal grains having a specific crystal orientation in a direction approximately normal to the substrate, and has a top surface and a bottom surface. The crystal orientations of individual gallium nitride-based single crystal grains as determined from inverse pole figure mapping by electron backscatter diffraction (EBSD) analysis on the top surface are distributed at various tilt angles from the specific crystal orientation, in which the average tilt angle thereof is 0.1 or more and less than 1 and the cross-sectional average diameter D.sub.T of the gallium nitride-based single crystal grains at the outermost surface exposed on the top surface is 10 m or more.

A pattern structure for a display device includes a substrate, a protrusion pattern on the substrate, a first conductive pattern covering an upper surface of the protrusion pattern, an interlayer insulating layer on the first conductive pattern and including a contact hole, and a second conductive pattern on the interlayer insulating layer and connected to the first conductive pattern. The contact hole overlaps the protrusion pattern and the first conductive pattern.

A light-emitting device includes: a substrate; a first light-emitting element row disposed on the substrate; a first wire disposed on the substrate and passing between two light-emitting elements adjacent in the first light-emitting element row; and a first bonding wire which has one end connected to one of the two light-emitting elements and another end connected to the other of the two light-emitting elements, and crosses over the first wire.

A light-emitting device includes a light-emitting element having an upper surface serving as a light-extracting surface, a first light-transmissive member bonded to the upper surface of the light-emitting element and including an inorganic material as a main component and a wavelength conversion member, and a second light-transmissive member bonded to an upper surface of the first light-transmissive member and including an inorganic material as a main component. A periphery of a lower surface of the first light-transmissive member is located outward of a periphery of the upper surface of the light-emitting element in a plan view. A periphery of an upper surface of the second light-transmissive member is located inward of a periphery of the upper surface of the first light-transmissive member in the plan view.