The invention relates to an optoelectronic component (10), comprising a carrier (1) and a plurality of nanorods (2), which are arranged on the carrier (1), wherein the nanorods (2) each comprise an active zone (2d). Furthermore, the optoelectronic component (10) comprises a potting compound (3), which is arranged on the carrier (1) and at least partially embeds the nanorods (2), and a structured metallization (5), which laterally surrounds the nanorods (2), wherein the nanorods (2) extend in a longitudinal direction N, the structured metallization (5) extends in a longitudinal direction M, and the longitudinal direction M of the structured metallization (5) extends transversely to the longitudinal direction N of the nanorods (2).

Micro-LED array display devices are disclosed. One of the micro-LED display devices includes: a micro-LED panel including a plurality of micro-LED pixels; a CMOS backplane including a plurality of CMOS cells corresponding to the micro-LED pixels to individually drive the micro-LED pixels; and bumps electrically connecting the micro-LED pixels to the corresponding CMOS cells in a state in which the micro-LED pixels are arranged to face the CMOS cells. The micro-LED pixels are flip-chip bonded to the corresponding CMOS cells formed on the CMOS backplane through the bumps so that the micro-LED pixels are individually controlled.

Micro-LED array display devices are disclosed. One of the micro-LED display devices includes: a micro-LED panel including a plurality of micro-LED pixels; a CMOS backplane including a plurality of CMOS cells corresponding to the micro-LED pixels to individually drive the micro-LED pixels; and bumps electrically connecting the micro-LED pixels to the corresponding CMOS cells in a state in which the micro-LED pixels are arranged to face the CMOS cells. The micro-LED pixels are flip-chip bonded to the corresponding CMOS cells formed on the CMOS backplane through the bumps so that the micro-LED pixels are individually controlled.

A light emitting device of side-view type includes a substrate, a light emitting element, an insulating member and a light reflecting or sealing member. The substrate includes a pair of connection terminals at least on a first main surface. The light emitting element is disposed on a first main surface side of the substrate and connected to the connection terminals. The insulating member is disposed to cover at least a portion of the connection terminals. The light reflecting or sealing member covers the light emitting element. The connection terminals each includes an element connection portion and an outer connection portion disposed on the first main surface of the substrate. The outer connection portion is configured to connect with an external unit. The insulating member is placed in contact with the light reflecting or sealing member, and disposed between the element connection portion and the outer connection portion.

A light emitting device of side-view type includes a substrate, a light emitting element, an insulating member and a light reflecting or sealing member. The substrate includes a pair of connection terminals at least on a first main surface. The light emitting element is disposed on a first main surface side of the substrate and connected to the connection terminals. The insulating member is disposed to cover at least a portion of the connection terminals. The light reflecting or sealing member covers the light emitting element. The connection terminals each includes an element connection portion and an outer connection portion disposed on the first main surface of the substrate. The outer connection portion is configured to connect with an external unit. The insulating member is placed in contact with the light reflecting or sealing member, and disposed between the element connection portion and the outer connection portion.

A semiconductor device according to an embodiment includes: a light emitting structure including a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, a second conductive semiconductor layer under the active layer, and a plurality of recesses exposing a lower portion of the first conductive semiconductor layer; at least one pad arranged outside the light emitting structure and arranged to be adjacent to at least one edge; and a plurality of insulation patterns arranged in the recesses and extending to a lower surface of the light emitting structure, in which widths of the plurality of insulation patterns are reduced as the insulation patterns become further away from the pad. The semiconductor device according to the embodiment may prevent a current from being focused on a recess area adjacent to the pad.

A thin film transistor, a display substrate, manufacturing methods thereof, and a display device are provided. The manufacturing method for the thin film transistor includes: forming a light-shielding metal pattern and a source-drain metal layer pattern on a base substrate; forming a buffer layer including first and second via-holes; forming a source electrode connected with the light-shielding metal pattern via the first via-hole, a drain electrode connected with the source-drain metal layer pattern via the second via-hole, and an active layer, an orthographic projection of the light-shielding metal pattern on the substrate completely covering that of the active layer on the substrate and at least partially covering those of the source and drain electrodes on the substrate; and forming a gate insulation layer and a gate electrode, orthographic projections of the gate insulation layer and the gate electrode on the substrate being identical.

A thin film transistor, a display substrate, manufacturing methods thereof, and a display device are provided. The manufacturing method for the thin film transistor includes: forming a light-shielding metal pattern and a source-drain metal layer pattern on a base substrate; forming a buffer layer including first and second via-holes; forming a source electrode connected with the light-shielding metal pattern via the first via-hole, a drain electrode connected with the source-drain metal layer pattern via the second via-hole, and an active layer, an orthographic projection of the light-shielding metal pattern on the substrate completely covering that of the active layer on the substrate and at least partially covering those of the source and drain electrodes on the substrate; and forming a gate insulation layer and a gate electrode, orthographic projections of the gate insulation layer and the gate electrode on the substrate being identical.

Light-emitting devices are disclosed. In some embodiments, the devices may emit light when a tunneling current is generated within the device.

Light-emitting devices are disclosed. In some embodiments, the devices may emit light when a tunneling current is generated within the device.