In order to be more compact and thin, this light emitting device includes LED elements embedded in a resin molded body such that light emitting units are exposed on a lateral surface of the resin molded body and positive electrodes and negative electrodes are exposed on a back surface which is perpendicular to the lateral surface of the resin molded body.

In order to be more compact and thin, this light emitting device (1) comprises LED elements (3-6) embedded in a resin molded body (2) such that light emitting units (32-62) face the front surface (21) of the resin molded body (2) and anodes (33-63) and cathodes (34-64) are exposed on the back surface (23) of the resin molded body 2.

An organic EL element includes a pixel electrode, a light emitting function layer that is formed on the pixel electrode, an electron injection layer formed on the light emitting function layer, and a counter electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity, in which the counter electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more, and an adsorption layer is formed on the counter electrode.

An optoelectronic device includes a substrate; a semiconductor stack, formed on the substrate; a current blocking region, formed above the semiconductor stack and comprising a first pad portion and a first finger portion; a first opening, formed in the first pad portion and comprising an elongate shape; and a first electrode formed above the current blocking region and electrically connecting to the semiconductor stack through the first opening.

An optoelectronic device includes a substrate; a semiconductor stack, formed on the substrate; a current blocking region, formed above the semiconductor stack and comprising a first pad portion and a first finger portion; a first opening, formed in the first pad portion and comprising an elongate shape; and a first electrode formed above the current blocking region and electrically connecting to the semiconductor stack through the first opening.

The light-emitting device includes a base plate, a bonding metal layer, a conductive oxide layer, an epitaxial layer, an insulation layer, a first ohmic contact layer, a second ohmic contact layer, a third ohmic contact layer, and a conductor line. The light-emitting device of the present invention uses the process of providing a conductor line to connect an ohmic contact layer, instead of wire bonding, so that a package process required by wire bonding can be eliminated to thereby reduce the size of the light-emitting device. Further, the light-emitting device, after the formation of the conductor line on the ohmic contact layer, allows for performance of a step of directly bonding to a circuit board so as to reduce the package size and simplify equipment necessary for the package process to thereby further lower down fabrication costs, achieving the effects of simplification of operation and fast fabrication.

The light-emitting device includes a base plate, a bonding metal layer, a conductive oxide layer, an epitaxial layer, an insulation layer, a first ohmic contact layer, a second ohmic contact layer, a third ohmic contact layer, and a conductor line. The light-emitting device of the present invention uses the process of providing a conductor line to connect an ohmic contact layer, instead of wire bonding, so that a package process required by wire bonding can be eliminated to thereby reduce the size of the light-emitting device. Further, the light-emitting device, after the formation of the conductor line on the ohmic contact layer, allows for performance of a step of directly bonding to a circuit board so as to reduce the package size and simplify equipment necessary for the package process to thereby further lower down fabrication costs, achieving the effects of simplification of operation and fast fabrication.

A light emitting unit has a first electrode, a second electrode and an epitaxial structure disposed between the first electrode and the second electrode. The epitaxial structure has a light emission layer, a first type semiconductor layer disposed between the light emission layer and the first electrode, and a second type semiconductor layer disposed between the light emission layer and the second electrode. A first surface of the second type semiconductor layer is facing the light emission layer. The second type semiconductor layer has a second surface opposite to the first surface and the second surface has at least one recess. At least portion of the second electrode is disposed within the at least one recess. A display device has a substrate, a first electrode connection layer, a second electrode connection layer, and a plurality of aforementioned light emitting units.

The present disclosure provides a light-emitting device including a substrate, a first block of semiconductor stack on the substrate, a second block of semiconductor stack on the substrate and a third block of semiconductor stack on the substrate. The first block of semiconductor stack includes a first emitting wavelength and a first surface away from the substrate. The second block of semiconductor stack on the substrate includes a second emitting wavelength and a second surface away from the substrate. The third block of semiconductor stack includes s a third emitting wavelength and a third surface away from the substrate. The second surface and the first surface are non-coplanar and the third surface and the first surface are coplanar. The first emitting wavelength, the second emitting wavelength and the third emitting wavelength are different.

A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.