The present disclosure relates to a driving backplane, a micro-LED display panel and a micro-LED display device. The driving backplane, includes a plurality of pixel units arranged in an array, each of the pixel units comprising: an anode lead; a cathode lead at a side of the anode lead; and at least two pairs of electrodes, each pair of electrodes of the at least two pairs of electrodes including an anode and a cathode oppositely disposed, the anode being electrically connected to the anode lead, and the cathode being electrically connected to the cathode lead. In the course of using the foregoing driving backplane of the micro-LED display panel, it is only necessary to solder an LED chip on one pair of electrodes of the at least two pairs of electrodes.

A method of manufacturing LED packages includes the steps of: forming a conductive circuit layer on a substrate; screen printing a wall layer on the conductive circuit layer to form a trellis with a plurality of wall units, so that regions of the conductive circuit layer surrounded by the wall units are exposed; mounting and electrically connecting at least one LED die on the conductive circuit layer within each of the wall units; molding a transparent layer to cover the LED dies; and cutting along the wall units to form a plurality of LED packages.

A method of manufacturing LED packages includes the steps of: forming a conductive circuit layer on a substrate; screen printing a wall layer on the conductive circuit layer to form a trellis with a plurality of wall units, so that regions of the conductive circuit layer surrounded by the wall units are exposed; mounting and electrically connecting at least one LED die on the conductive circuit layer within each of the wall units; molding a transparent layer to cover the LED dies; and cutting along the wall units to form a plurality of LED packages.

The manufacturing method of the light-emitting device is provided in which an auxiliary electrode in contact with an electrode formed using a transparent conductive film of a light-emitting element is formed using a mask, and direct contact between the auxiliary electrode and an EL layer is prevented by oxidizing the auxiliary electrode. Further, the light-emitting device manufactured according to the method and the lighting device including the light-emitting device are provided.

A display apparatus includes a substrate, a light-emitting device provided on the substrate, a driving transistor device configured to control the light-emitting device, a first power supply line electrically connected to a source region of the driving transistor device, a conductive pattern electrically connected to a gate electrode of the driving transistor device, and a second power supply line electrically connected to the first power supply line, wherein the conductive pattern and the first power supply line constitute a first capacitor, and the conductive pattern and the second power supply line constitute a second capacitor, wherein the first capacitor and the second capacitor are connected in parallel.

A display apparatus includes a substrate, a light-emitting device provided on the substrate, a driving transistor device configured to control the light-emitting device, a first power supply line electrically connected to a source region of the driving transistor device, a conductive pattern electrically connected to a gate electrode of the driving transistor device, and a second power supply line electrically connected to the first power supply line, wherein the conductive pattern and the first power supply line constitute a first capacitor, and the conductive pattern and the second power supply line constitute a second capacitor, wherein the first capacitor and the second capacitor are connected in parallel.

Disclosed are a light emitting diode and a lighting system having the same. The light emitting diode according to an embodiment may include a first electrode having a plurality of patterns formed on an upper surface thereof; a texture structure having a plurality of patterns corresponding to the plurality of patterns of the first electrode and configured to be in contact with at least one of the plurality of patterns of the first electrode; a first conductive semiconductor layer disposed on the texture structure; an active layer disposed on the first conductive semiconductor layer; a second conductive semiconductor layer disposed on the active layer; and a second electrode disposed on the second conductive semiconductor layer.

An optoelectronic semiconductor chip may include a semiconductor body, a first and second contact element, a chip carrier, an electrically conductive contact layer, an electrically conductive supply layer, an insulating layer between the contact layer and the supply layer, and at least one electrically conductive feed-through element embedded in the insulating layer. The feed-through element(s) may electrically connect the supply layer to the contact layer. A quantity and/or size of the feed-through elements may be greater on a second side of the semiconductor body opposite to the first side than on the first side.

Contrary to conventional wisdom, which holds that light-emitting diodes (LEDs) should be cooled to increase efficiency, the LEDs disclosed herein are heated to increase efficiency. Heating an LED operating at low forward bias voltage (e.g., V<k.sub.BT/q) can be accomplished by injecting phonons generated by non-radiative recombination back into the LED's semiconductor lattice. This raises the temperature of the LED's active rejection, resulting in thermally assisted injection of holes and carriers into the LED's active region. This phonon recycling or thermo-electric pumping process can be promoted by heating the LED with an external source (e.g., exhaust gases or waste heat from other electrical components). It can also be achieved via internal heat generation, e.g., by thermally insulating the LED's diode structure to prevent (rather than promote) heat dissipation. In other words, trapping heat generated by the LED within the LED increases LED efficiency under certain bias conditions.

An organic EL element includes a pixel electrode, a light emitting function layer that is formed on the pixel electrode, an electron injection layer formed on the light emitting function layer, and a counter electrode that is formed on the electron injection layer and that has semi-transmissive reflectivity, in which the counter electrode contains a reductive material that reduces material of the electron injection layer and Ag with atomic ratio of 75% or more, and an adsorption layer is formed on the counter electrode.