A method is described for forming at least one metal contact on a surface of a semiconductor and a device with at least one metal contact. The method is used for forming at least one metal contact (60) on a surface (11) of a semiconductor (10) and has the steps of: applying a metal layer (20) of palladium onto the semiconductor surface (11), applying a mask (40, 50) onto the metal layer (20), and structuring the palladium of the metal layer (20) using the mask (40, 50), wherein lateral deposits (21) of the metal are formed on sidewalls of the mask by the structuring so that the mask is embedded between the deposits (21) and the structured metal layer (20′) after the structuring. Since the mask is conductive, it can remain embedded in the metal. The deposits and the mask form a part of the contact.

A method is described for forming at least one metal contact on a surface of a semiconductor and a device with at least one metal contact. The method is used for forming at least one metal contact (60) on a surface (11) of a semiconductor (10) and has the steps of: applying a metal layer (20) of palladium onto the semiconductor surface (11), applying a mask (40, 50) onto the metal layer (20), and structuring the palladium of the metal layer (20) using the mask (40, 50), wherein lateral deposits (21) of the metal are formed on sidewalls of the mask by the structuring so that the mask is embedded between the deposits (21) and the structured metal layer (20′) after the structuring. Since the mask is conductive, it can remain embedded in the metal. The deposits and the mask form a part of the contact.

A light emitting device in which a bonding pad is soldered to a mounting substrate, wherein the bonding pad may be formed in various shapes that can minimize the occurrence of voids during soldering or heat fusion.

A light-emitting device, includes: a substrate; a light-emitting structure formed on the substrate and including a first portion, and a second portion where no optoelectronic conversion occurs therein; and a first electrode located on both the first portion and the second portion.

A light emitting module including a plurality of light emitting elements, a plurality of first circuit boards, and a second circuit board is provided. Each of the light emitting elements is disposed on the corresponding first circuit board and is electrically connected to the corresponding first circuit board. The second circuit board is disposed on the first circuit boards, wherein any two adjacent first circuit boards are electrically connected to each other through the second circuit board.

A light emitting module including a plurality of light emitting elements, a plurality of first circuit boards, and a second circuit board is provided. Each of the light emitting elements is disposed on the corresponding first circuit board and is electrically connected to the corresponding first circuit board. The second circuit board is disposed on the first circuit boards, wherein any two adjacent first circuit boards are electrically connected to each other through the second circuit board.

Disclosed is an ultraviolet light-emitting element which uses an electron emission operation. The ultraviolet light-emitting element is sealed to maintain a high degree of vacuum. A emission substrate is prepared for the electron emission and an electron emitted from the emission substrate passes through a control substrate. The electron, which has passed through the control substrate, collides with a light-emitting substrate, from which formation of a p-type semiconductor has been excluded, and thus forms ultraviolet light.

A detection substrate, a preparation method thereof, a detection device and a detection method are provided. A detection substrate includes a base substrate, wherein the base substrate includes multiple through holes, and electrode columns are embedded in the multiple through holes; the base substrate comprises a detection region and a bonding pad region, the detection region includes a driving circuit, and the bonding pad region is provided with bonding pads; and the bonding pads are connected with the electrode columns through the driving circuit.

A detection substrate, a preparation method thereof, a detection device and a detection method are provided. A detection substrate includes a base substrate, wherein the base substrate includes multiple through holes, and electrode columns are embedded in the multiple through holes; the base substrate comprises a detection region and a bonding pad region, the detection region includes a driving circuit, and the bonding pad region is provided with bonding pads; and the bonding pads are connected with the electrode columns through the driving circuit.

A micro-LED device of the present disclosure includes a crystal growth substrate (100) and a frontplane (200) that includes a plurality of micro-LEDs (220), each of which includes a first semiconductor layer (21) of a first conductivity type and a second semiconductor layer (22) of a second conductivity type, and a device isolation region (240). The device isolation region includes a metal plug (24) electrically coupled with the second semiconductor layer. This device includes a middle layer (300), a backplane (400) provided on the middle layer, a bank layer (640) supported by the crystal growth substrate, the bank layer defining a plurality of pixel openings (645) where the ultraviolet or bluish violet light radiated from the plurality of micro-LEDs respectively enters, and a red quantum dot phosphor (65R), a green quantum dot phosphor (65G) and a blue quantum dot phosphor (65B) respectively provided in the plurality of pixel openings of the bank layer.