A light-emitting device includes: a substrate; and at least one light source comprising: a light-emitting element comprising a plurality of electrodes that face the substrate, and a resin member covering at least portions of lateral surfaces of the light-emitting element and not covering an upper surface of the light-emitting element, wherein, in a directivity diagram of the light source, a variation in light output of the light source in a range of −40° to 40° is 15% or less.

A display device includes a first electrode and a second electrode disposed on a substrate, the first and second electrodes being spaced apart from each other with a spaced area disposed between the first and second electrodes, an insulating layer disposed on the first electrode and the second electrode, the insulating layer filling the spaced area, and a light emitting element disposed on the insulating layer and having a first end disposed on the first electrode and a second end opposite to the first end. The insulating layer includes a first opening adjacent to the first end and exposing the insulating layer, and the spaced area is adjacent to the second end of the light emitting element.

A light emitting element includes a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; an insulating film surrounding an outer peripheral surface of each of the first semiconductor layer, the active layer and the second semiconductor layer; and a polymer film including a polymer chain and on at least a portion of a surface of the insulating film.

A light emitting element includes a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; an insulating film surrounding an outer peripheral surface of each of the first semiconductor layer, the active layer and the second semiconductor layer; and a polymer film including a polymer chain and on at least a portion of a surface of the insulating film.

Described are light emitting diode (LED) devices comprising a mesa with semiconductor layers, the semiconductor layers including an N-type layer, an active layer, and a P-type layer. The mesa has a top surface and at least one side wall, the at least one side wall defining a trench having a bottom surface. A passivation layer is on the at least one side wall and on the top surface of the mesa, the passivation layer comprises one or more a low-refractive index material and distributed Bragg reflector (DBR). A p-type contact is on the top surface of the mesa, and an n-type contact on the bottom surface of the trench.

The present invention relates to a display device and, more particularly, to a display device using a semiconductor light emitting element. The display device according to the present invention comprises a light emitting element module, wherein the light emitting element module comprises: a red semiconductor light emitting element that emits red light; a green semiconductor light emitting element that is disposed on the top surface of the red semiconductor light emitting element; a blue semiconductor light emitting element that is disposed on the top surface of the green semiconductor light emitting element; an individual electrode portion for supplying an individual signal to each of the red semiconductor light emitting element, the green semiconductor light emitting element, and the blue semiconductor light emitting element; and a common electrode portion for supplying a common signal to the red semiconductor light emitting element, the green semiconductor light emitting element, and the blue semiconductor light emitting element.

A flip-chip light emitting device includes a transparent substrate, an epitaxial light-emitting structure, a transparent bonding layer interposed between the transparent substrate and the light-emitting structure, and a protective insulating layer disposed over the light-emitting structure and the bonding layer. The transparent bonding layer has a smaller-thickness section that has a first contact surface for the protective insulating layer to be disposed thereover, and a larger-thickness section that has a second contact surface meshing with and bonded to a roughened bottom surface of the light-emitting structure. The first contact surface is smaller in roughness than the second contact surface. A method for producing the device is also disclosed.

A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer.

Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.

Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.