A light-emitting diode (LED) includes a substrate, an epitaxial structure, and an electrode structure. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on the substrate in such order. The electrode structure includes electrodes that are respectively disposed on the first and second semiconductor layers opposite to the substrate. Each electrode has an upper surface that is opposite to the first and second semiconductor layers. The electrode structure also includes an insulating unit that is disposed in each electrode, and that is not exposed from the upper surface of the corresponding electrode.

Methods and systems for improving the efficiency of an LED or micro-LED arrangement are described. In the disclosed embodiments, the LED or micro-LED is surrounded by an angled metasurface mirror, comprised of nanoparticles. This metasurface mirror reflect side emissions from the LED or micro-LED towards an observer, reducing light loss and thereby improving the energy efficiency of, as well as quality of light from, the LED or micro-LED. Other embodiments are described.

Methods and systems for improving the efficiency of an LED or micro-LED arrangement are described. In the disclosed embodiments, the LED or micro-LED is surrounded by an angled metasurface mirror, comprised of nanoparticles. This metasurface mirror reflect side emissions from the LED or micro-LED towards an observer, reducing light loss and thereby improving the energy efficiency of, as well as quality of light from, the LED or micro-LED. Other embodiments are described.

A light emitting device includes a light emitting element, a terminal substrate and a fixing member. The light emitting element is a semiconductor laminate having a first semiconductor layer, a light emitting layer, and a second semiconductor layer that are laminated in that order, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The terminal substrate includes a pair of terminals connected to the first electrode and the second electrode, and an insulator layer that fixes the terminals. At least a part of the outer edges of the terminal substrate is disposed more to a center of the light emitting device than the outer edges of the semiconductor laminate. The fixing member fixes the light emitting element and the terminal substrate.

A light emitting device includes a light emitting element, a terminal substrate and a fixing member. The light emitting element is a semiconductor laminate having a first semiconductor layer, a light emitting layer, and a second semiconductor layer that are laminated in that order, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The terminal substrate includes a pair of terminals connected to the first electrode and the second electrode, and an insulator layer that fixes the terminals. At least a part of the outer edges of the terminal substrate is disposed more to a center of the light emitting device than the outer edges of the semiconductor laminate. The fixing member fixes the light emitting element and the terminal substrate.

A method of manufacturing a light emitting device includes: providing a substrate including a pair of connection terminals, the connection terminals each having a protruding portion at least on a first main surface of the connection terminal; providing a light emitting element on the protruding portion, the light emitting element having a semiconductor laminate and a pair of electrodes on a same surface of the semiconductor laminate; bonding the pair of the electrodes of the light emitting element and the pair of the connection terminals, respectively, by a molten material; and embedding a surface of the protruding portion of the connection terminals, a surface of the molten material, and a space between the substrate and the light emitting element into a light reflecting member.

A method of manufacturing a light emitting device includes: providing a substrate including a pair of connection terminals, the connection terminals each having a protruding portion at least on a first main surface of the connection terminal; providing a light emitting element on the protruding portion, the light emitting element having a semiconductor laminate and a pair of electrodes on a same surface of the semiconductor laminate; bonding the pair of the electrodes of the light emitting element and the pair of the connection terminals, respectively, by a molten material; and embedding a surface of the protruding portion of the connection terminals, a surface of the molten material, and a space between the substrate and the light emitting element into a light reflecting member.

As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the lime of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.

As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the lime of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.

A micro light-emitting device, including a first type semiconductor layer, a light-emitting layer, a second type semiconductor layer, a first type electrode, a second type electrode, and a light reflection layer, is provided. The light-emitting layer is arranged on the first type semiconductor layer. The second type semiconductor layer is arranged on the light-emitting layer. The first type electrode and the second type electrode are both arranged on the second type semiconductor layer. The light reflection layer is arranged between the light-emitting layer and the first type electrode. The light reflection layer includes an oxidized area and a non-oxidized area. A reflectance of the oxidized area is greater than a reflectance of the non-oxidized area. An orthographic projection of a part of the oxidized area on the first type semiconductor layer and an orthographic projection of the first type electrode on the first type semiconductor layer at least partially overlap.